Исследование методом наноиндентирования твердости и модуля Юнга в тонких приповерхностных слоях карбида кремния со стороны Si- и C-граней
This paper presents the results of a nanoindentation study of the hardness and Young’s modulus of hexagonal silicon carbide SiC-4H, obtained by the modified Lely method, in thin surface layers near the C-terminated and Si-terminated faces at small penetration depths of the indenter. It is shown that differences in the elastic properties and hardness of SiC propagate from the surface into the crystal to a depth of about 60 nm. The Young's modulus at the C-terminated face practically coincides with the Young's modulus of the bulk SiC-4H sample (~ 400 GPa), which is approximately 2.3 times higher than the Young's modulus at the Si-terminated face at a depth of 0 to 35 nm (~ 170 GPa). The value of the SiC hardness is approximately 1.5 times higher at the surface of the C-terminated face than at the Si-terminated face, on average, at a depth of 0 to 60 nm. It is concluded from the obtained data that the surface energy of the C-terminated face is also approximately 1.5 times higher than the surface energy of the Si-terminated face since a new surface is formed upon deformation or cracking of the crystal