scholarly journals Электрохимический контроль электронной проводимости тонких пленок металлоорганических полимеров

2021 ◽  
Vol 47 (16) ◽  
pp. 43
Author(s):  
М.П. Карушев ◽  
А.М. Тимонов
Keyword(s):  
Thin Films ◽  
Electrical Resistance ◽  
Doping Level ◽  
Macrocyclic Complex ◽  
Polymer Complexes ◽  
Electrochemical Doping ◽  
Conductance Method

The dependence of the conductivity in thin films of polymer complexes of nickel with N4 ligands with macrocyclic and chelate structure on the doping level has been studied by the electrochemical in-situ conductance method. The electrochemical conductivity window of polymers depends on the structure of the monomers and approached 1.2 V for the macrocyclic complex. Electrochemical doping changes the electrical resistance of the investigated materials by 4 orders of magnitude

Effect of Processing Conditions on the Microstructure and Electrical Resistance of Nanocrystalline ITO Thin Films Made by Laser Ablation

2006 ◽  
Vol 514-516 ◽  
pp. 1161-1165 ◽  
Author(s):  
Raluca Savu ◽  
Ednan Joanni
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Cross Sections ◽  
Indium Tin Oxide ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Deposition Pressure ◽  
Ito Thin Films ◽  
Made In

Nanocrystalline indium tin oxide (ITO) thin films were deposited on Si/SiO2 substrates by laser ablation from a ceramic target with a composition of 0.9 In2O3 . 0.1 SnO2. Samples were prepared in the pressure range from 10-1 to 5mbar, either in-situ at 500°C or at room temperature and heat-treated in air at 500°C. X-ray diffraction results show that the films are not oriented, except the ones made at high temperature which exhibit strong (400) orientation. AFM pictures show that the grains are round shaped and the sizes are in the range between 50 and 200nm, except for films made in-situ at 10-1mbar which are elongated and faceted. For higher pressures the grains tend to be small and to form agglomerates. The porosity of the films increases with the deposition pressure and the thicknesses reach a maximum of 2.8µm at 1mbar for the films made at room temperature and of 1.2µm at 2mbar for the ones made in-situ; for higher pressures the growth rate drop drastically, as revealed from SEM observations of cross-sections. The electrical resistance increases with the deposition pressure due to the increase in porosity, changing from 3.3k to 38.9M for films deposited at room temperature and from 20 to 265k for the ones made in-situ.

A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements

2007 ◽  
Vol 78 (10) ◽  
pp. 103901 ◽  
Author(s):  
U. B. Arnalds ◽  
J. S. Agustsson ◽  
A. S. Ingason ◽  
A. K. Eriksson ◽  
K. B. Gylfason ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
Electrical Resistance Measurements ◽  
Sputtering System

Electrical Resistance and Structural Changes on Crystallizaiton Process of Amorphous Ge-Te Thin Films

2009 ◽  
Vol 1160 ◽  
Author(s):  
Yuta Saito ◽  
Yuji Sutou ◽  
Junichi Koike
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Electrical Resistance ◽  
Structural Changes ◽  
Crystallization Process ◽  
Optical Disk ◽  
Resistance Change ◽  
X Ray ◽  
Change Material

AbstractGeTe-Sb2Te3 pseudobinary compounds are attracting considerable attention as phase change materials for optical disk and phase change random access memory (PRAM). In these compounds, Ge2Sb2Te5 (GST) has been used for an optical disk memory such as DVD-RAM because the crystallization by laser beam heating is very fast (∼20ns). Recently, the GST has been much considered as material for PRAM and, therefore, the electrical resistance change due to crystallization and the phase change by applying an electrical current have been widely investigated. On the other hand, although GeTe compound has been suggested as the phase change material for the optical disk by Chen et al in 1986, the study focusing on the phase change material for PRAM is limited. Since GeTe is known to show the phenomenon of electrical switching, this compound has a potential of PRAM. In this study, the electrical resistance and crystalline structural changes on crystallization process in Ge-Te thin films were investigated.Films of amorphous Ge100–xTex (x : 46-94) with 200 nm thickness were deposited by sputtering of GeTe alloy target or co-sputtering of GeTe and Te targets on SiO2/Si substrates. In-situ electrical resistance measurements during heating process of these films were performed by two point probe method in a heating rate of 2∼50°C/min. X-ray diffraction (XRD) analysis was employed for the structural identification of thin films for 10-60° in 2′ using X-ray diffractometer with Cu-K. Transmission electron microscope (TEM) analysis was carried out to investigate the microstructure and to identify crystalline structure. The compositions of these films were confirmed by energy dispersive X-ray spectroscopy (EDS) attached TEM.All as-deposited Ge-Te films were confirmed amorphous by XRD and TEM. From the in-situ electrical resistance measurements, it is found that resistance change with crystallization process depends on the composition and the stoichiometric GeTe compound shows abrupt electrical resistance change at around 190 °C. The crystallization temperature of GeTe was higher than that of GST and resistance difference between the amorphous and the crystal was also larger. While the electrical resistance of GST film gradually decreased with increasing temperature after the crystallization at around 160 °C, that of GeTe film showed small temperature dependence after crystallization. It was found by X-ray measurement observation that the amorphous GeTe compound film crystallized first into a cubic state, and then into a stable rhombohedral state by further heating. The crystallization kinetics of Ge-Te thin films will be also presented.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Sign in / Sign up

Export Citation Format

Share Document