scholarly journals Механизм роста монослоя на верхней грани Ga-каталитических нитевидных нанокристаллов GaAs и GaP

2022 ◽  
Vol 48 (4) ◽  
pp. 20
Author(s):  
А.А. Корякин ◽  
Ю.А. Еремеев ◽  
С.В. Федина ◽  
В.В. Федоров
Keyword(s):  
Growth Rate ◽  
Theoretical Model ◽  
Growth Mechanism ◽  
Growth Conditions ◽  
Nanowire Growth ◽  
Group V ◽  
Evaporation Coefficient ◽  
Catalyst Droplet ◽  
Monolayer Coverage

The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.

scholarly journals Self-consistent modeling of MBE self-catalyzed GaAs nanowire growth

2021 ◽  
Vol 2086 (1) ◽  
pp. 012008
Author(s):  
S V Fedina ◽  
A A Koryakin ◽  
V V Fedorov ◽  
G A Sapunov ◽  
I S Mukhin
Keyword(s):  
Molecular Beam ◽  
Growth Conditions ◽  
Nanowire Growth ◽  
Material Transport ◽  
Evaporation Coefficient ◽  
Catalyst Droplet ◽  
Gaas Nanowires ◽  
Gaas Nanowire ◽  
The Given ◽  
Kinetics Of

Abstract Self-catalyzed GaAs nanowires are synthesized by molecular beam epitaxy at various arsenic fluxes and growth temperatures. The growth of GaAs nanowires is simulated considering the kinetics of material transport inside the catalyst droplet. The re-evaporation coefficient of arsenic is estimated for the given growth conditions. Calculated nanowire growth rate is in satisfactory agreement with the experimental data.

The Effect of Substrate Orientation on the Properties of (Ga, Al)As Grown by Gas Source Molecular Beam Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
A. Sandhu ◽  
T. FUJII ◽  
H. Ando ◽  
H. Ishikawa ◽  
E. Miyauchi
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Group V ◽  
Group Iii ◽  
Al Content ◽  
Gas Source ◽  
Compensation Ratio ◽  
Potential Applications ◽  
Si Doped ◽  
Gas Source Mbe

ABSTRACTWe have carried out the first systemmatic investigation on the effect of substrate temperature and arsenic partial pressure on the morphology, growth rate, and compensation ratio of Si-doped GaAs, and the Al content of AlxGa1−xAs grown on just-cut (100), (110), (111)A&B, (311)A&B orientated GaAs substrates by gas source MBE (GSMBE). Triethylgallium ( TEG, Ga(C2H5)3 ) and triethylaluminium ( TEA, Al(C2H5)3 ) were used as group III sources, and solid arsenic ( As4 ) and silicon as a group V and IV sources, respectively. The best GaAs mophology was obtained at relatively high temperatures and arsenic pressures. The A orientations were identified as ‘fast surfaces,’ with the GaAs growth rate being comparable to the (100) orientation. The B orientations were identified as ‘slow surfaces,’ with the GaAs growth rate being much less (approximately 50% for the (111)B orientation ) than on the (100) orientation. The least compensated Si-doped GaAs was grown on the (311)A orientated substrate. The Al content, x, (nominally x=0.27 for (100)) of AlxGas1−xAs grown on (110), (111)A&B, was less than 0.05 and not affected by the growth conditions. The Al content of epilayers grown on (311)A&B ranged between x=0.1 to 0.27, strongly depending on the growth temperature.These results show that using GSMBE we can selectively modifying a large range of (Ga,Al)As crystal properties. Potential applications include the selective growth and realisation of ultra-fine and planar structures and devices.

scholarly journals Лимитирующие режимы роста III-V нитевидных нанокристаллов

2020 ◽  
Vol 46 (17) ◽  
pp. 26
Author(s):  
В.Г. Дубровский ◽  
А.С. Соколовский ◽  
H. Hijazi
Keyword(s):  
Growth Rate ◽  
Generalized Equation ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Group V ◽  
Growth Environment ◽  
Group Iii ◽  
Deposition Surface ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Theoretical analysis is presented for vapor-liquid-solid growth of III-V nanowires in the presence of three competing processes of the group V deposition, surface diffusion of group III adatoms and nucleation of islands at the liquid-solid interface. A generalized equation for the nanowire growth rate is obtained which can be limited of one of the three processes depending on the growth environment. Different regimes of vapor-liquid-solid growth of III-V nanowires are analyzed depending on the group III and V influxes and nanowire radius.

Growth mechanism of NPD crystal from amorphous thin film by observation of morphology and measuring growth rate

2020 ◽  
Vol 59 (SN) ◽  
pp. SN1015
Author(s):  
Hideyuki Kanehara ◽  
Yuki Araki ◽  
Hiroyasu Katsuno ◽  
Toshitaka Nakada
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Growth Mechanism ◽  
Amorphous Thin Film

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

MBE Growth of GaN Films in Presence of Surfactants: The Effect of Mg and Si

1999 ◽  
Vol 595 ◽  
Author(s):  
Guido Mula ◽  
Bruno Daudin ◽  
Christoph Adelmann ◽  
Philippe Peyla
Keyword(s):  
Growth Rate ◽  
Theoretical Model ◽  
Diffusion Barriers ◽  
Surface Kinetics ◽  
Growth Behaviour ◽  
Mbe Growth ◽  
Foreign Species

AbstractWe present here a description and an analysis of the modifications in the growth behaviour of GaN induced by the presence of foreign species. The particular cases of Mg and Si are analysed. Profound changes, both in microscopic and macroscopic scales, occur in presence of Mg, even for fluxes of about 1/1000th of the Ga flux. The growth rate can be increased by almost 50%, depending of the III/V ratio and on the amount of Mg. A theoretical model is proposed to describe the observed effect. It is found that Mg induces changes in the Ga and N diffusion barriers and acts as a surfactant. The effect is stronger on the a-GaN than on the α-GaN, where N is more tightly bonded. The effect of Si is by far less pronounced, probably because it is more easily incorporated than Mg, and its effect on the surface kinetics is then strongly reduced.

scholarly journals <sup>210</sup>Pb-<sup>226</sup>Ra chronology reveals rapid growth rate of <i>Madrepora oculata</I> and <i>Lophelia pertusa</i> on world's largest cold-water coral reef

2011 ◽  
Vol 8 (6) ◽  
pp. 12247-12283
Author(s):  
P. Sabatier ◽  
J.-L. Reyss ◽  
J. M. Hall-Spencer ◽  
C. Colin ◽  
N. Frank ◽  
...  
Keyword(s):  
Growth Rate ◽  
Coral Reef ◽  
Linear Growth ◽  
Cold Water ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Age And Growth ◽  
Linear Growth Rate ◽  
Lophelia Pertusa ◽  
Water Coral

Abstract. Here we show the use of the 210Pb-226Ra excess method to determine the growth rate of corals from one of the world's largest known cold-water coral reef, the Røst Reef off Norway. Two large branching framework-forming cold-water coral specimens, one Lophelia pertusa and one Madrepora oculata were collected alive at 350 m water depth from the Røst Reef at ~67° N and ~9° E. Pb and Ra isotopes were measured along the major growth axis of both specimens using low level alpha and gamma spectrometry and the corals trace element compositions were studied using ICP-QMS. Due to the different chemical behaviors of Pb and Ra in the marine environment, 210Pb and 226Ra were not incorporated the same way into the aragonite skeleton of those two cold-water corals. Thus to assess of the growth rates of both specimens we have here taken in consideration the exponential decrease of initially incorporated 210Pb as well as the ingrowth of 210Pb from the decay of 226Ra. Moreover a~post-depositional 210Pb incorporation is found in relation to the Mn-Fe coatings that could not be entirely removed from the oldest parts of the skeletons. The 226Ra activities in both corals were fairly constant, then assuming constant uptake of 210Pb through time the 210Pb-226Ra chronology can be applied to calculate linear growth rate. The 45.5 cm long branch of M. oculata reveals an age of 31 yr and a~linear growth rate of 14.4 ± 1.1 mm yr−1, i.e. 2.6 polyps per year. However, a correction regarding a remaining post-depositional Mn-Fe oxide coating is needed for the base of the specimen. The corrected age tend to confirm the radiocarbon derived basal age of 40 yr (using 14C bomb peak) with a mean growth rate of 2 polyps yr−1. This rate is similar to the one obtained in Aquaria experiments under optimal growth conditions. For the 80 cm-long specimen of L. pertusa a remaining contamination of metal-oxides is observed for the middle and basal part of the coral skeleton, inhibiting similar accurate age and growth rate estimates. However, the youngest branch was free of Mn enrichment and this 15 cm section reveals a growth rate of 8 mm yr−1 (~1 polyp every two to three years). However, the 210Pb growth rate estimate is within the lowermost ranges of previous growth rate estimates and may thus reflect that the coral was not developing at optimal growth conditions. Overall, 210Pb-226Ra dating can be successfully applied to determine the age and growth rate of framework-forming cold-water corals, however, removal of post-depositional Mn-Fe oxide deposits is a prerequisite. If successful, large branching M. oculata and L. pertusa coral skeletons provide unique oceanographic archive for studies of intermediate water environmentals with an up to annual time resolution and spanning over many decades.

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