scholarly journals Toward Next Generation Plasmonic Nanopore Slit Platform with a ~10 nm Slit-Width

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Seong Soo Choi ◽  
◽  
Byung Seong Bae ◽  
Kyoung Jin Kim ◽  
Myoug Jin Park ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Thermal Emission ◽  
Ion Beam ◽  
High Energy ◽  
Infrared Emission ◽  
Au Nanoparticle ◽  
Beam Current Density ◽  
Electron Beam Current

We fabricated various nanoaperture plasmonic platforms for single-molecule detection. We fabricated nanoapertures like nanopores on a pyramid and nanoslits on an Au flat membrane using a Ga ion focused ion beam drilling technique, followed by irradiating with a high energy electron beam, dependent on the electron beam current density to obtain nanoapertures with a few nanometer sizes (circular nanopore, nanoslit pores). We examined their optical characteristics with varying aperture sizes and sample thicknesses. We obtained broad emission spectra in the visible and infrared region from the (7 x 7) slit array and a sharp, strong infrared emission peak from the Au nanoparticle on the substrate. The fabricated Au platform with ~10 nm nanometer opening can be employed as a single-molecule sensor and an infrared thermal emission device.

Fabrication of Various Plasmonic Nano-aperture Platforms with a ~10 nm Width

2020 ◽  
Author(s):  
Seong Soo Choi ◽  
Kyoung Jin Kim ◽  
Myoung Jin Park ◽  
Byung Seong Bae ◽  
Yong-Min Lee ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Molecule ◽  
Thermal Emission ◽  
Ion Beam ◽  
High Energy ◽  
Infrared Emission ◽  
Au Nanoparticle ◽  
Beam Current Density ◽  
Electron Beam Current ◽  
Emission Device

We fabricated the nano-aperture plasmonic platforms for single molecule detection and other various applications such as infrared thermal emission device. The nano-apertures including the nanopores on the pyramid, and the nano-slits on the Au flat membrane were fabricated using a Ga ion focused ion beam drilling technique, followed by high energy electron beam irradiations dependent upon the electron beam current density. The nanopores with a few nanometer size and the nanoslit array with order of ~ 100 nm width were fabricated. Optical characteristics for the various nanoslits were examined dependent upon the slit opening width and sample thickness. The broad emission spectra from the (7x 7) slit array are obtained from spp-mediated emission in the visible and infrared region. A sharp strong infrared emission peak is also obtained due to Au nanoparticle. The fabricated Au platform can be utilized as single molecule sensor and infrared thermal emission device.

Shrinking Graphene Nanopore Using Electron-Beam-Induced Deposition for Single Molecule Detection

2015 ◽  
Author(s):  
Jian Ma ◽  
Weiwei Zhao ◽  
Lei Liu ◽  
Jingjie Sha ◽  
Yunfei Chen
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Solid State ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Molecule Detection ◽  
Large Size ◽  
Scanning Electron ◽  
Graphene Nanopore

Solid-state nanopore has already shown success of single molecule detection and graphene nanopore is potential for successful DNA sequencing. Here, we present a fast and controllable way to fabricate sub-5 nm nanopore on graphene membrane. The process includes two steps: sputtering a large size nanopore using a conventional focused ion beam (FIB) and shrinking the large nanopore to a few nanometers using scanning electron microscope (SEM). We also demonstrated the ability of the graphene nanopores fabricated in this manner to detect individual 48Kbp λ-DNA molecules.

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

scholarly journals Fabrication and Applications of Solid-State Nanopores

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1886 ◽  
Author(s):  
Qi Chen ◽  
Zewen Liu
Keyword(s):  
Electron Beam ◽  
Solid State ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Biological Molecules ◽  
Single Molecule Detection ◽  
Massively Parallel ◽  
Selective Transport ◽  
Synthetic Materials

Nanopores fabricated from synthetic materials (solid-state nanopores), platforms for characterizing biological molecules, have been widely studied among researchers. Compared with biological nanopores, solid-state nanopores are mechanically robust and durable with a tunable pore size and geometry. Solid-state nanopores with sizes as small as 1.3 nm have been fabricated in various films using engraving techniques, such as focused ion beam (FIB) and focused electron beam (FEB) drilling methods. With the demand of massively parallel sensing, many scalable fabrication strategies have been proposed. In this review, typical fabrication technologies for solid-state nanopores reported to date are summarized, with the advantages and limitations of each technology discussed in detail. Advanced shrinking strategies to prepare nanopores with desired shapes and sizes down to sub-1 nm are concluded. Finally, applications of solid-state nanopores in DNA sequencing, single molecule detection, ion-selective transport, and nanopatterning are outlined.

Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth

1998 ◽  
Vol 523 ◽  
Author(s):  
Paul D. Brown ◽  
Colin J. Humphreys
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Electronic Materials ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Surface Relaxation ◽  
Misfit Dislocations ◽  
Ion Milling

AbstractThe characterisation of semiconductor thin films and device structures increasingly requires the use of a variety of complementary electron microscope-based techniques as feature sizes decrease. We illustrate how layer electrical and structural properties can be correlated: firstly averaged over the bulk and then on the individual defect scale, e.g. scanning transmission electron beam induced conductivity can be used to image the recombination activity of orthogonal <110> misfit dislocations within relaxed MBE grown Si/Si1-xGex/Si(001) heterostructures on the sub-micrometre scale. There is also need for improved understanding of sample preparation procedures and imaging conditions such that materials issues relevant to ULSI development can be addressed without hindrance from artefact structures. Hence, we consider how point defects interact under the imaging electron beam and the relative merits of argon ion milling, reactive ion beam etching, focused ion beam milling and plasma cleaning when used for TEM sample preparation. Advances in sample preparation procedures must also respect inherent problems such as thin foil surface relaxation effects, e.g. cleaved wedge geometries are more appropriate than conventional cross-sections for the quantitative characterisation of δ-doped layers. Choice of the right imaging technique for the problem to be addressed is illustrated through consideration of polySi/Si emitter interfaces within bipolar transistor structures. The development of microscopies for the rapid analysis of electronic materials requires wider consideration of non-destructive techniques of assessment, e.g. reflection high energy electron diffraction in a modified TEM is briefly described.

The Fabrication of MgB2 Film and Nano-Bridge by EB and FIB

2016 ◽  
Vol 723 ◽  
pp. 415-420
Author(s):  
Yan Li Li ◽  
Zhuang Xu ◽  
Xiang Dong Kong ◽  
Li Han ◽  
Xiao Na Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Property ◽  
Beam Current ◽  
Annealing Duration ◽  
Electron Beam Current ◽  
Transition Width

100nm thin Mg/B precursor films were prepared on SiC substrates in ZZSX-500 vacuum coating machine. They were annealed by electron-beam(EB) which only took fractions of a second. In this paper the best annealing duration to fabricate the superconducting MgB2 thin films was investigated. Under the optimized annealing condition(accelerating voltage 15kV, electron beam current 5mA, annealing duration 0.7s), the superconducting MgB2 thin film with critical temperature Tconset~35.3 K and transition width ∆Tc~1K was fabricated. Besides that, a nano-bridge (about 100×200nm2) was etched on the superconducting MgB2 thin film by Focused Ion Beam (FIB). It’s a relative simple and efficient method. The nano-bridge exhibited the effect of Josephson junction with RSJ characteristics. At the same time a little loss of superconducting property was detected.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

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