Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth

1998 ◽  
Vol 523 ◽  
Author(s):  
Paul D. Brown ◽  
Colin J. Humphreys
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Electronic Materials ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Surface Relaxation ◽  
Misfit Dislocations ◽  
Ion Milling

AbstractThe characterisation of semiconductor thin films and device structures increasingly requires the use of a variety of complementary electron microscope-based techniques as feature sizes decrease. We illustrate how layer electrical and structural properties can be correlated: firstly averaged over the bulk and then on the individual defect scale, e.g. scanning transmission electron beam induced conductivity can be used to image the recombination activity of orthogonal <110> misfit dislocations within relaxed MBE grown Si/Si1-xGex/Si(001) heterostructures on the sub-micrometre scale. There is also need for improved understanding of sample preparation procedures and imaging conditions such that materials issues relevant to ULSI development can be addressed without hindrance from artefact structures. Hence, we consider how point defects interact under the imaging electron beam and the relative merits of argon ion milling, reactive ion beam etching, focused ion beam milling and plasma cleaning when used for TEM sample preparation. Advances in sample preparation procedures must also respect inherent problems such as thin foil surface relaxation effects, e.g. cleaved wedge geometries are more appropriate than conventional cross-sections for the quantitative characterisation of δ-doped layers. Choice of the right imaging technique for the problem to be addressed is illustrated through consideration of polySi/Si emitter interfaces within bipolar transistor structures. The development of microscopies for the rapid analysis of electronic materials requires wider consideration of non-destructive techniques of assessment, e.g. reflection high energy electron diffraction in a modified TEM is briefly described.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

Thickness Measurement of Focused Ion Beam Thinned Silicon Crystals Using Convergent Beam.Electron Diffraction and Electron Energy Loss Spectroscopy.

1999 ◽  
Vol 5 (S2) ◽  
pp. 898-899
Author(s):  
D. Delille ◽  
R. Pantel ◽  
G. Auvert ◽  
E. Van Cappellen
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Thickness Measurement ◽  
Crystal Thickness ◽  
Ion Milling ◽  
Electron Energy Loss

1. IntroductionThe FIB (focused ion beam) is now widely accepted as the most site-specific TEM preparation tool and as such proves to be highly valuable when analysing ULSI devices. However, using high-energy Gallium ions for milling induces amorphization of the crystal surfaces. A method able to quantify this surface alteration on silicon using a combination of CBED (convergent beam electron diffraction) and EELS (electron energy loss spectroscopy) is presented. CBED is a powerful tool that also can generate an accurate measure of crystal thickness. EELS can yield the total sample thickness, so from the difference the combined amorphous layers can be assessed. Two sets of application results are presented: the first one is obtained on a FIB thinned sample using an ion energy of 50 keV and the second set of results confirms the validity of the proposed method on a mechanically polished specimen with no subsequent ion milling.

Fast Preparation of Ultrathin FIB Lamellas for MEMs-Based In Situ TEM Experiments

2016 ◽  
Vol 850 ◽  
pp. 722-727 ◽  
Author(s):  
Hui Wang ◽  
Shang Gang Xiao ◽  
Qiang Xu ◽  
Tao Zhang ◽  
Henny Zandbergen
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Metallic Alloy ◽  
In Situ Tem ◽  
Ion Milling ◽  
Electrochemical Polishing ◽  
Argon Ion

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.

Focused Ion Beam (FIB) Milling Damage Formed During Tem Sample Preparation of Silicon

1998 ◽  
Vol 4 (S2) ◽  
pp. 656-657 ◽  
Author(s):  
David W. Susnitzky ◽  
Kevin D. Johnson
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Process Development ◽  
Ion Beam ◽  
Surface Damage ◽  
Development Effort ◽  
Ion Milling ◽  
Preparation Methods ◽  
Damage Layer

The ongoing reduction of scale of semiconductor device structures places increasing demands on the sample preparation methods used for transmission electron microscopy (TEM). Much of the semiconductor industry's failure analysis and new process development effort requires specific transistor, metal or dielectric structures to be analyzed using TEM techniques. Focused ion beam (FIB) milling has emerged as a valuable technique for site-specific TEM sample preparation. FIB milling, typically with 25-50kV Ga+ ions, enables thin TEM samples to be prepared with submicron precision. However, Ga+ ion milling significantly modifies the surfaces of TEM samples by implantation and amorphization. Previous work using 90° milling angles has shown that Ga+ ion milling of Si produces a surface damage layer that is 280Å thick. This damage is problematical since the current generation of semiconductor devices requires TEM samples in the 500-1000Å thickness range.

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

scholarly journals Toward Next Generation Plasmonic Nanopore Slit Platform with a ~10 nm Slit-Width

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Seong Soo Choi ◽  
◽  
Byung Seong Bae ◽  
Kyoung Jin Kim ◽  
Myoug Jin Park ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Thermal Emission ◽  
Ion Beam ◽  
High Energy ◽  
Infrared Emission ◽  
Au Nanoparticle ◽  
Beam Current Density ◽  
Electron Beam Current

We fabricated various nanoaperture plasmonic platforms for single-molecule detection. We fabricated nanoapertures like nanopores on a pyramid and nanoslits on an Au flat membrane using a Ga ion focused ion beam drilling technique, followed by irradiating with a high energy electron beam, dependent on the electron beam current density to obtain nanoapertures with a few nanometer sizes (circular nanopore, nanoslit pores). We examined their optical characteristics with varying aperture sizes and sample thicknesses. We obtained broad emission spectra in the visible and infrared region from the (7 x 7) slit array and a sharp, strong infrared emission peak from the Au nanoparticle on the substrate. The fabricated Au platform with ~10 nm nanometer opening can be employed as a single-molecule sensor and an infrared thermal emission device.

Low keV FIB Applications for Circuit Edit

2007 ◽  
Author(s):  
Chad Rue ◽  
Randall Shepherd ◽  
Roy Hallstein ◽  
Rick Livengood
Keyword(s):  
Sample Preparation ◽  
Recent Work ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Milling ◽  
Physical Mechanisms ◽  
Potential Benefits

Abstract Focused ion beam (FIB) tools are used to perform "circuit edit," (CE), in which existing integrated circuit devices are modified to create prototype devices that simulate potential mask changes. Although ion milling at low keV is common in TEM sample preparation, the technique has not become commonplace for CE applications. This is because most commercial FIB systems are optimized for either 30 or 50 keV. Recent work in the laboratories of FEI and Intel have attempted to apply low keV FIB processing to cutting small copper lines on advanced IC devices. The majority of this paper focuses on water-assisted, low keV copper etching. Secondary objectives of this work are to raise general awareness among FIB users of the potential benefits of low keV processing, to speculate on the physical mechanisms involved, and to discuss some of the technical difficulties associated with low keV FIB operation.

scholarly journals Depth distribution profile of martensite phase observed by transmission electron microscope in ion implanted metals

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
Dwi Gustiono
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Depth Distribution ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Martensite Phase ◽  
Distribution Profile ◽  
Transmission Electron ◽  
Simulation Based

In this work, transmission electron microscopy (TEM) observation results from a depth distribution profile of the nano-martensite occuring in titanium implanted austenitic stainless steel is presented. The thickness of 200 keV high-energy ion implantation induced layer until 150 nm as calculated by the TRIM computer simulation based on the Monte-Carlo program. After the implantation, the specimens were attached to thin foil ring to be milled by focused ion beam (FIB). TEM observation on the ion implantation induced layer reveled that nano-martensite is distributed until80 nm under surface. the nano-martensite mostly nucleated at the region near the surface occurred the higher concentration gradient of implanted ion, namely higher stress concentration takes place so that this stress introduced due to the implanted ions act as a driving force for the transformation.

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