scholarly journals Optical Characterization of Zinc Modified Bismuth Silicate Glasses

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Rajesh Parmar ◽  
J. Hooda ◽  
R. S. Kundu ◽  
R. Punia ◽  
N. Kishore
Keyword(s):  
Band Gap ◽  
Optical Characterization ◽  
Dielectric Materials ◽  
Band Gap Energy ◽  
Glass System ◽  
Energy Band Gap ◽  
Classical Electron ◽  
Increase With Increase ◽  
Good Agreement

The optical characterization of glass samples in the system 40SiO2·xZnO · (60-x)Bi2O3withx=0, 5, 10, 15, 20, 25, 30, 35, and 40 prepared by conventional melt-quench technique has been carried out in the light of Hydrogenic Excitonic Model (HEM). The absorption coefficient spectra show good agreement with theoretical HEM for the present glass system and the values of different parameters likeEg,R,Γ1,Γc, andCohave been estimated from fitting of this model. The values of energy band gap estimated from fitting of HEM with experimental data are in good agreement with those obtained from Tauc’s plot for direct transitions. The band gap energy is found to increase with increase of ZnO content. The decrease in values of Urbach energy with increase in ZnO content indicates a decrease in defect concentration in the glass matrix on addition of ZnO content. Optical constantsnandkobeyk-kconsistency and the dielectric response of the studied glass system is similar to that obtained for Classical Electron Theory of Dielectric Materials. The calculated values of the metallization criterion (M) show that the synthesized glasses may be good candidates for new nonlinear optical materials.

scholarly journals UJI UV-VIS LAPISAN TiO2/N2 UNTUK MENENTUKAN BAND GAP ENERGY

2018 ◽  
Vol 3 (2) ◽  
pp. 6-10
Author(s):  
Devi Indriani ◽  
Helga Dwi Fahyuan ◽  
Ngatijo Ngatijo
Keyword(s):  
Band Gap ◽  
Wavelength Range ◽  
Energy Band ◽  
Nitrogen Doping ◽  
Band Gap Energy ◽  
Tio2 Layer ◽  
Energy Band Gap ◽  
Gap Energy ◽  
Transmittance Band

[Title: TEST UV-VIS LAYER TiO2/N2 FOR DETERMINING BAND GAP ENERGY] The effect of nitrogen doping variation on energy band gap in TiO2 layer grown by doctor blade technique. The TiO2/N2 layer was prepared with concentrations of 0%, 15%, 25% and 25% calcined at 500°C for 3 hours. Characterization of band gap energy by using the UV-Vis spectrometer at a wavelength range of 200 nm-700 nm. The band gap energy is obtained by using the Swanepoel equation and Touch Plot method. The results showed that doping of nitrogen can decrease the band gap energy of 3.9250 eV, 3.8750 eV, 3.8375 eV and 3.9125 eV, respectively. The smallest energy band gap is obtained at 25% concentration that is 3.8375eV. Keywords: Coating TiO2/N2, transmittance, Band gap energy

Simulation and prediction of optical characterization of casting (Adamantan-Fulgide) thin films using (CTANNs) approach

2019 ◽  
Vol 33 (11) ◽  
pp. 1950093 ◽  
Author(s):  
A. M. A. EL-Barry ◽  
D. M. Habashy
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Back Propagation ◽  
Optical Characterization ◽  
Experimental Information ◽  
Training Algorithm ◽  
Energy Gaps ◽  
Resilient Back Propagation ◽  
Good Agreement

For reinforcement, the photochromic field and the cooperation between the theoretical and experimental branches of physics, the computational, theoretical artificial neural networks (CTANNs) and the resilient back propagation (R[Formula: see text]) training algorithm were used to model optical characterizations of casting (Admantan-Fulgide) thin films with different concentrations. The simulated values of ANN are in good agreement with the experimental data. The model was also used to predict values, which were not included in the training. The high precision of the model has been constructed. Moreover, the concentration dependence of both the energy gaps and Urbach’s tail were, also tested. The capability of the technique to simulate the experimental information with best accuracy and the foretelling of some concentrations which is not involved in the experimental data recommends it to dominate the modeling technique in casting (Admantan-Fulgide) thin films.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Structural and Optical Characterization of InGaN Layers Grown by MOMBE

2003 ◽  
Vol 798 ◽  
Author(s):  
P. Singh ◽  
J. Aderhold ◽  
J. Graul ◽  
V. Yu. Davydov ◽  
F. Gourbilleau ◽  
...  
Keyword(s):  
Band Gap ◽  
Crystalline State ◽  
Optical Characterization ◽  
Xrd And Tem

ABSTRACTThe investigated InGaN ternary films were grown by MOMBE, with the In fraction varying from 6% to 100%. Using XRD and TEM, we determine the crystalline state, the nature of defects inside the layers and their distribution as related to the In concentration. The band gap of the alloys was studied through PL measurements, it is below 1 eV for InN.

Thermal and optical characterization of Ge–Sn–Se glass system

2014 ◽  
Vol 118 (4) ◽  
pp. 1551-1557 ◽  
Author(s):  
Surbhi Sharma ◽  
Rajesh Kumar ◽  
Amit Sareen ◽  
Navjeet Sharma
Keyword(s):  
Optical Characterization ◽  
Glass System ◽  
Se Glass

Synthesis and characterization of a mixture of CoFe2O4 and MgFe2O4 from layered double hydroxides: Band gap energy and magnetic responses

2014 ◽  
Vol 369 ◽  
pp. 249-259 ◽  
Author(s):  
Ulises A. Agú ◽  
Marcos I. Oliva ◽  
Sergio G. Marchetti ◽  
Angélica C. Heredia ◽  
Sandra G. Casuscelli ◽  
...  
Keyword(s):  
Band Gap ◽  
Layered Double Hydroxides ◽  
Band Gap Energy ◽  
Synthesis And Characterization ◽  
Gap Energy ◽  
Double Hydroxides

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

AbstractSpectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

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