Antiferroelectric PbZrO3thin films: an in-situ temperature-dependent study of the dipolar arrangement at the atomic level

2021 ◽  
Author(s):  
Lluís Yedra ◽  
Keyword(s):  
Atomic Level ◽  
Temperature Dependent ◽  
Temperature Dependent Study

4D in Situ Temperature-Dependent Study on Morphological and Chemical Evolution of Metals in Molten Salt Environments By Multimodal Microscopy

2020 ◽  
Vol MA2020-02 (59) ◽  
pp. 2925-2925
Author(s):  
Xiaoyang Liu ◽  
Arthur Ronne ◽  
Lin-Chieh Yu ◽  
Lingfeng He ◽  
Mingyuan Ge ◽  
...  
Keyword(s):  
Molten Salt ◽  
Chemical Evolution ◽  
Temperature Dependent ◽  
Temperature Dependent Study

Temperature-dependent study of GaAs1−x−y N x Bi y alloys for band-gap engineering: photoreflectance and k · p modeling

2020 ◽  
Vol 13 (9) ◽  
pp. 091005
Author(s):  
Wiktor Żuraw ◽  
Wojciech M. Linhart ◽  
Jordan Occena ◽  
Tim Jen ◽  
Jared. W. Mitchell ◽  
...  
Keyword(s):  
Band Gap ◽  
Temperature Dependent ◽  
Band Gap Engineering ◽  
Temperature Dependent Study

In Situ Analysis of Surface Contaminant Desorption during Low-Temperature Silicon Substrate Cleaning using Reflection Electron Energy Loss Spectrometry

1992 ◽  
Vol 259 ◽  
Author(s):  
Selmer S. Wong ◽  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Aimee L. Smith ◽  
Harry A. Atwater
Keyword(s):  
Low Temperature ◽  
Energy Loss ◽  
Electron Energy ◽  
Core Loss ◽  
Temperature Dependent ◽  
Electron Energy Loss Spectrometry ◽  
Analysis Technique ◽  
Chemical Analysis Technique ◽  
Electron Energy Loss

ABSTRACTWe have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.

scholarly journals Temperature Dependence of Electrical Properties and Crystal Structure of 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3Single Crystals

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Qian Li ◽  
Yun Liu ◽  
Andrew Studer ◽  
Zhenrong Li ◽  
Ray Withers ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Electrical Properties ◽  
Dielectric Permittivity ◽  
Neutron Diffraction ◽  
Electrical Measurement ◽  
Temperature Dependent ◽  
Electromechanical Properties ◽  
Polar Order

We characterized the temperature dependent (~25–200°C) electromechanical properties and crystal structure of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3single crystals usingin situelectrical measurement and neutron diffraction techniques. The results show that the poled crystal experiences an addition phase transition around 120°C whereas such a transition is absent in the unpoled crystal. It is also found that the polar order persists above the maximum dielectric permittivity temperature at which the crystal shows a well-defined antiferroelectric behavior. The changes in the electrical properties and underlying crystal structure are discussed in the paper.

Low Driving Voltage of Organic Light-Emitting Diodes Using p-Doping Starburst Amine as Hole Transporter

2000 ◽  
Vol 660 ◽  
Author(s):  
Xiang Zhou ◽  
Andreas Nollau ◽  
Jan Blochwitz ◽  
Martin Pfeiffer ◽  
Torsten Fritz ◽  
...  
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Organic Light Emitting Diodes ◽  
Driving Voltage ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Layer Sequence ◽  
Undoped Material ◽  
High Bulk

ABSTRACTWe investigate the electrical properties and the OLED application of controlledly doped amorphous hole transporters. Thin films of starburst amine, 4,4',4“-tris(N,N-diphenyl- amino) triphenylamine (TDATA), doped by a fully fluorinated form of tetracyano- quinodimethane (F4-TCNQ), are characterized in situ by temperature dependent conductivity and Seebeck measurements. The conductivity and hole concentration increase with dopant concentration and are many orders of magnitude higher than those of undoped material. OLED devices with the layer sequence ITO/TDATA(200 nm)/Alq3(65 nm)/LiF(1 nm)/Al were fabricated. The use of p-doped TDATA thin films with high bulk conductivity and hole concentration reduces the resistance of the devices and leads to a thinner space charge layer which facilitates injection of holes from the ITO anode.

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