scholarly journals The Effect of Discharge Mode on Ion Energy and Plasma Potential in the Plume Plasma Region

2022 ◽  
Vol 65 (1) ◽  
pp. 1-10
Author(s):  
Shun IMAI ◽  
Daisuke IMAGUCHI ◽  
Hiroki WATANABE ◽  
Kenichi KUBOTA ◽  
Shinatora CHO ◽  
...  
Keyword(s):  
Plasma Potential ◽  
Plasma Region ◽  
Discharge Mode ◽  
Ion Energy

Synthesis of Crystallized TiNi Films by Ion Irradiation

2012 ◽  
Vol 78 ◽  
pp. 87-91
Author(s):  
Noriaki Ikenaga ◽  
Yoichi Kishi ◽  
Zenjiro Yajima ◽  
Noriyuki Sakudo
Keyword(s):  
Shape Memory ◽  
Crystallization Temperature ◽  
Ion Irradiation ◽  
Deposition Process ◽  
Plasma Potential ◽  
Micro Electro Mechanical Systems ◽  
Ion Energy ◽  
Crystal Film ◽  
Irradiation Energy ◽  
New Apparatus

TiNi is well known as a typical shape-memory alloy, and is expected to be a promising material for micro actuators. In order to realize micro electro mechanical systems (MEMS) with this material, we have to get thin crystal film of the material, since the shape-memory property appears only when the structure is crystalline. In our previous studies we developed a new apparatus as well as a new deposition process for lowering the crystallization temperature by using ion irradiation. In addition, we have found that the deposited film by the process can be crystallized at very low temperature (below 473 K) without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. In this study, we aim for the realization of crystallized TiNi film, which is deposited on Si substrate below 373 K substrate temperature. In order to realization the purpose, we have revealed the effect of Ar ion energy on lowering the crystallization temperature. The ion energy is measured with a quadrupole mass spectrometer (QMS) having an ion energy analyzer. The deposited TiNi films are examined with an X-ray diffraction (XRD). We found the plasma potential against the reactor chamber is important to be considered in the ion irradiation energy. The effects of ion energy for the crystallization of TiNi film are discussed.

Measurements of ion energy and flux during ion-assisted deposition of CdTe epilayers by rf magnetron-sputtering

1991 ◽  
Vol 69 (3-4) ◽  
pp. 236-240 ◽  
Author(s):  
J. G. Cook ◽  
S. R. Das
Keyword(s):  
Voltage Drop ◽  
Rf Magnetron Sputtering ◽  
Plasma Potential ◽  
Crystallographic Structure ◽  
Substrate Bias ◽  
Rf Power ◽  
Substrate Bias Voltage ◽  
Ion Energy ◽  
Discharge Parameters ◽  
Rf Sputter Deposition

Previously we found that the crystallographic structure of CdTe films deposited by means of ion-assisted magnetron rf sputter deposition was very sensitive to the substrate bias voltage and temperature (S. R. Das et al. Can. J. Phys. 65, 864 (1987)). In this work, the ion energy and flux incident on the growing film were determined by means of rf-compensated Langmuir diagnostics. It was found that control of the film phase in the previous work was achieved largely by adjustments of ion energy and substrate temperature; the ion flux changed relatively little. The work is extended to a study of the discharge parameters as a function of rf power, using a CdTe target. The ion and electron densities are found to be sensitive to rf power, whereas the plasma potential Vp and the electron temperature are not. A well-known equation for Vp in terms of the positive excursions of the target voltage gives a poor estimate for Vp because of the voltage drop across the rf impedance of the target disc.

Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Vhf Pecvd

2005 ◽  
Vol 862 ◽  
Author(s):  
A. Gordijn ◽  
J. Francke ◽  
L. Hodakova ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Solar Cells ◽  
High Pressures ◽  
Defect Density ◽  
Plasma Potential ◽  
High Rate ◽  
Growth Surface ◽  
Microcrystalline Silicon ◽  
Ion Energy ◽  
Single Junction ◽  
External Power Source

AbstractMicrocrystalline silicon (μc-Si) based single junction solar cells are deposited by VHF PECVD using a showerhead cathode at high pressures in depletion conditions. At a deposition rate of 4.5 nm/s, a stabilized conversion efficiency of 6.7 % is obtained for a single junction solar cell with a μc-Si i-layer of 1 μm. The i-layer is made near the transition from amorphous to crystalline. In order to control the material properties in the growth direction, the hydrogen dilution of silane in the gas phase is graded following different profiles with a parabolic shape. It is observed that the performance of solar cells deposited at high rate improves under light soaking conditions at 50 °C, which we attribute to post deposition equilibration of a fast deposited transition material.The performance is lower at higher rates due to poorer i-layer quality (higher defect density), which may be attributed to smaller relaxation times for growth precursors at the growth surface and the higher energy ion bombardment at higher plasma power. High process pressures can be used to reduce the ion energy by decreasing the mean free path. We have introduced an additional method to limit the ion energy by controlling the DC self bias voltage using an external power source. In this way the quality of the μc-Si layers and the performance of the solar cells is further improved.

scholarly journals LANGMUIR PROBE TO CHARACTERIZE THE DUST PLASMA OF ALUMINUM OXIDE (AL2O3) PRODUCED BY DC PLASMA SYSTEM

2021 ◽  
Vol 03 (04) ◽  
pp. 23-34
Author(s):  
Ala F. AHMED
Keyword(s):  
Aluminum Oxide ◽  
Vacuum Chamber ◽  
Plasma Potential ◽  
Discharge Voltage ◽  
Dust Particles ◽  
Saturation Current ◽  
Air Plasma ◽  
Plasma Region ◽  
Dc System ◽  
Plasma Characteristics

In this research, we have conducted an experimental study of the dusty plasma to the Aluminum oxide (Al2O3) dust material with a grain radius of (0.2) µm to (0.6) µm. In the experiment, we use air in the vacuum chamber system under different low pressure (0.1-0.8) Torr. The results have showed that the existence of dust particles in air plasma is equal to the Paschen minimum which is (0.4) Torr with Al2O3 dusty and without dust. The effect of Al2O3 dust particles on the plasma characteristics like floating potential (Vf), plasma potential (Vp), electron saturation current (Ies), temperature of the electron (Te), density of electron (ne) and density of ion (ni) of the DC system that can be calculated in the glow-discharge region. Parameter measurements are taken by four cylindrical probes which are diagnosed at a distance of (40) mm from the cathode diameter, the Paschen minimum at a pressure of (0.4) Torr. The plasma potential and the probe's floating voltage become more negative when dust is immersed in the plasma region. The features of these parameters show that the current discharge decreases while the discharge voltage increases when the aluminum oxide dust particles that are incorporated. And vice versa was in the absence of dust. Electron density increases in the existence of dust particles which causes the electron temperature to decrease.

Ion Energy Distributions in Silane-Hydrogen Plasmas

1996 ◽  
Vol 420 ◽  
Author(s):  
E. A. G. Hamers ◽  
W. G. J. H. M. Van Sark ◽  
J. Bezemer ◽  
W. F. Van Der Weg ◽  
W. J. Goedheer
Keyword(s):  
Charge Density ◽  
Charge Exchange ◽  
Exchange Process ◽  
Plasma Potential ◽  
Energy Distributions ◽  
Charge Exchange Process ◽  
Net Charge ◽  
Ion Energy ◽  
A Charge ◽  
Ion Energy Distributions

AbstractFor the first time ion energy distributions (IED) of different ions from silane-hydrogen (SiH4-H2 ) RF plasmas are presented, i.e. the distributions of SiH3+, SiH2+ and SiH2+. The energy distributions of SiH3+ and SiH3+ ions show peaks, which are caused by a charge exchange process in the sheath. A method is presented by which the net charge density in the sheath is determined from the plasma potential and the energy positions of the charge exchange peaks. Knowing the net charge density in the sheath and the plasma potential, the sheath thickness can be determined and an estimation of the absolute ion fluxes can be made. The flux of ions can, at maximum, account for 10% of the observed deposition rate.

scholarly journals EVALUATION OF GROWTH AND SEED YIELD OF TWO CULTIVARS OF FLAX

2021 ◽  
Vol 03 (04) ◽  
pp. 17-22
Author(s):  
Hanaa Khudhaier Mohammed Ali AL-HAIDARY ◽  
A.F.Abed AL-KHADER
Keyword(s):  
Aluminum Oxide ◽  
Vacuum Chamber ◽  
Plasma Potential ◽  
Discharge Voltage ◽  
Dust Particles ◽  
Saturation Current ◽  
Air Plasma ◽  
Plasma Region ◽  
Dc System ◽  
Plasma Characteristics

In this research, we have conducted an experimental study of the dusty plasma to the Aluminum oxide (Al2O3) dust material with a grain radius of (0.2) µm to (0.6) µm. In the experiment, we use air in the vacuum chamber system under different low pressure (0.1-0.8) Torr. The results have showed that the existence of dust particles in air plasma is equal to the Paschen minimum which is (0.4) Torr with Al2O3 dusty and without dust. The effect of Al2O3 dust particles on the plasma characteristics like floating potential (Vf), plasma potential (Vp), electron saturation current (Ies), temperature of the electron (Te), density of electron (ne) and density of ion (ni) of the DC system that can be calculated in the glow-discharge region. Parameter measurements are taken by four cylindrical probes which are diagnosed at a distance of (40) mm from the cathode diameter, the Paschen minimum at a pressure of (0.4) Torr. The plasma potential and the probe's floating voltage become more negative when dust is immersed in the plasma region. The features of these parameters show that the current discharge decreases while the discharge voltage increases when the aluminum oxide dust particles that are incorporated. And vice versa was in the absence of dust. Electron density increases in the existence of dust particles which causes the electron temperature to decrease.

Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Ganguly ◽  
T. Ikeda ◽  
I. Sakata ◽  
A. Matsuda
Keyword(s):  
Amorphous Silicon ◽  
High Mobility ◽  
Plasma Potential ◽  
Drift Mobility ◽  
Ion Energy ◽  
Precise Control ◽  
Langmuir Probe Measurements ◽  
Bombardment Energy ◽  
Silane Plasma ◽  
Plasma Configuration

AbstractWe have previously shown that the carrier drift mobility in amorphous silicon can be enhanced by optimizing the ion-bombardment energy during growth on conducting substrates. However, there exists a lack of reproducibility of samples exhibiting high mobility which we attribute to the rf field induced fluctuation of the plasma potential in a conventional (Te ≈ 2eV) silane plasma. Here we introduce an enclosed plasma configuration that allows us to confine the effect of the rf field and therefore obtain a low-electron-temperature (Te ≈ 0.1 eV) silane plasma as determined from Langmuir probe measurements. The measured ion-energy distributions correlate with those for electrons and the mean ion-energy can be controlled by biasing the substrate which allows us to reproducibly fabricate high drift mobility amorphous silicon.

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