scholarly journals Influence of Oxygen Content on Microstructure and Inclusion Characteristics of Bainitic Weld Metals

2013 ◽  
Vol 53 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Jun Seok Seo ◽  
Changhee Lee ◽  
Hee Jin Kim
Keyword(s):  
2018 ◽  
Vol 115 (4) ◽  
pp. 410
Author(s):  
Fengyu Song ◽  
Yanmei Li ◽  
Ping Wang ◽  
Fuxian Zhu

Three weld metals with different oxygen contents were developed. The influence of oxygen contents on the microstructure and impact toughness of weld metal was investigated through high heat input welding tests. The results showed that a large number of fine inclusions were formed and distributed randomly in the weld metal with oxygen content of 500 ppm under the heat input condition of 341 kJ/cm. Substantial cross interlocked acicular ferritic grains were induced to generate in the vicinity of the inclusions, primarily leading to the high impact toughness at low temperature for the weld metal. With the increase of oxygen content, the number of fine inclusions distributed in the weld metal increased and the grain size of intragranular acicular ferrites decreased, which enhanced the impact toughness of the weld metal. Nevertheless, a further increase of oxygen content would contribute to a great diminution of the austenitic grain size. Following that the fraction of grain boundary and the start temperature of transformation increased, which facilitated the abundant formation of pro-eutectoid ferrites and resulted in a deteriorative impact toughness of the weld metal.


2010 ◽  
Vol 638-642 ◽  
pp. 3687-3692 ◽  
Author(s):  
Shuichi Nakamura ◽  
Toshiei Hasegawa ◽  
Ryuuichi Shimura ◽  
Isamu Kimoto

The effect of oxygen content on toughness in the high strength weld metals with full martensitic microstructures was investigated for Gas Metal Arc Welding (GMAW) and Gas Tungsten Arc Welding (GTAW). Solid and Flux cored two types wires were examined for their influence on the resulting oxygen content in weld metals. It has succeeded in controlling the oxygen contents without changing welding processes. As expected, the increasing oxygen content obviously decreased the upper shelf energy (vEshelf). One of the primary reasons of this tendency is considered that the higher density of oxide makes dimples on the ductile fracture surface smaller. On the other hand, as unexpected, the oxygen content from 7 to 450 ppm had no impact on the fracture appearance transition temperature (FATT), and oxides at the brittle fracture initiation point have not been found. This result supports that the oxides in high strength full martensitic weld metals (Vickers hardness = 360 ~ 430) have no harmful effect on FATT.


2021 ◽  
Vol 39 (4) ◽  
pp. 301-308
Author(s):  
Tomoaki NAKASHIMA ◽  
Yuji KISAKA ◽  
Fumiaki KIMURA ◽  
Masahiro OHARA ◽  
Shinichi TASHIRO ◽  
...  

Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.


Author(s):  
Y. P. Lin ◽  
A. H. O’Reilly ◽  
J. E. Greedan ◽  
M. Post

In the basal planes of the orthorhombic YBa2Cu3O7-X compound with x=0.07, which has a Tc of around 90K, chains of copper-oxygen are formed along the [010] direction. Previous investigations on the variation of Tc with oxygen content have shown the existence of a plateau at Tc = 60K for x=0.3 to 0.4, suggesting the presence of a separate phase. This phase has also been identified to be orthorhombic, but with a 2x superlattice along [100] of the parent structure, and the superlattice has been attributed to the formation of alternating copper-oxygen and copper-vacancy chains. In our work, we have studied the chain ordering phenomenon by electron microscopy and neutron diffraction on samples with different oxygen contents. We report here some of our electron microscopy findings for samples with x=0.4.Powder samples of YBa2Cu3O7-X were prepared by controlled re-oxidation of previously reduced material. For electron microscopy, the sample was dry ground using a mortar and pestle in a dry nitrogen atmosphere without the use of any solvent and transferred dry onto holey carbon film for examination in a Philips CM12 microscope.


2008 ◽  
Vol 44 ◽  
pp. 63-84 ◽  
Author(s):  
Chris E. Cooper

Optimum performance in aerobic sports performance requires an efficient delivery to, and consumption of, oxygen by the exercising muscle. It is probable that maximal oxygen uptake in the athlete is multifactorial, being shared between cardiac output, blood oxygen content, muscle blood flow, oxygen diffusion from the blood to the cell and mitochondrial content. Of these, raising the blood oxygen content by raising the haematocrit is the simplest acute method to increase oxygen delivery and improve sport performance. Legal means of raising haematocrit include altitude training and hypoxic tents. Illegal means include blood doping and the administration of EPO (erythropoietin). The ability to make EPO by genetic means has resulted in an increase in its availability and use, although it is probable that recent testing methods may have had some impact. Less widely used illegal methods include the use of artificial blood oxygen carriers (the so-called ‘blood substitutes’). In principle these molecules could enhance aerobic sports performance; however, they would be readily detectable in urine and blood tests. An alternative to increasing the blood oxygen content is to increase the amount of oxygen that haemoglobin can deliver. It is possible to do this by using compounds that right-shift the haemoglobin dissociation curve (e.g. RSR13). There is a compromise between improving oxygen delivery at the muscle and losing oxygen uptake at the lung and it is unclear whether these reagents would enhance the performance of elite athletes. However, given the proven success of blood doping and EPO, attempts to manipulate these pathways are likely to lead to an ongoing battle between the athlete and the drug testers.


1989 ◽  
Vol 50 (18) ◽  
pp. 2895-2901 ◽  
Author(s):  
N. Bontemps ◽  
D. Fournier ◽  
A.C. Boccara ◽  
P. Monod ◽  
H. Alloul ◽  
...  

2007 ◽  
pp. 62-71 ◽  
Author(s):  
François Vaillant ◽  
Jean-Marie Boursier ◽  
Claude Amzallag ◽  
Christiane Bibollet ◽  
Serge Pons

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.


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