scholarly journals Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO

2020 ◽  
Vol 31 (3) ◽  
pp. 110
Author(s):  
Suzan Malek Shakouli
Keyword(s):  
Activation Energy ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Applied Voltage ◽  
Visible Spectrum ◽  
Substrate Temperatures ◽  
Zno Semiconductor ◽  
Minority Carriers ◽  
Substrate Sample

This paper shows the applied voltage effect on the superconductor substrate sample. The substrate temperature (Ts) increases the activation energy of the substrate atoms. Thus, the injecting of minority carriers (holes) increased in ZnO semiconductor. These carriers recombine with electrons of 4S1 shell for Cu atom. The recombination occurs by two ways from band to band (direct recombination) or via traps (indirect recombination). The recombination mechanisms produce photons emission in the ultraviolet and visible spectrum. The calibration between voltage and temperature achieved using Variac device. The applied voltages were 60, 65, 70, and 80 Volt, and the recorded substrate temperatures were 300, 320, 350, and 400 °C, respectively.

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

Properties of carbon films deposited by pulsed laser vaporization from pyrolytic graphite

1989 ◽  
Vol 4 (5) ◽  
pp. 1238-1242 ◽  
Author(s):  
A. P. Malshe ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
S. B. Ogale ◽  
S. V. Rajarshi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pyrolytic Graphite ◽  
Carbon Films ◽  
Laser Vaporization ◽  
Film Properties ◽  
Amorphous Carbon Films ◽  
Resistivity Measurements ◽  
Laser Raman ◽  
Quartz Substrates ◽  
Substrate Temperatures

Amorphous carbon films have been deposited on silicon 〈111〉 and quartz substrates by pulsed ruby laser vaporization from pyrolytic graphite. Depositions have been carried out at different substrate temperatures, and the properties of the deposited carbon films have been studied using IR and UV–VIS transmission, ellipsometry, and laser-Raman spectroscopies. Chemical and electrical resistivity measurements have also been performed. It is shown that the film properties depend critically on the substrate temperature and that at the substrate temperature of 50 °C films with substantial proportion of sp3 hybridized orbitals are obtained.

Observation of Rheed Intensity Oscillations During PbSe/CaF2/Si(111) MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
W. K. Liu ◽  
X. M. Fang ◽  
P. J. McCann ◽  
M. B. Santos
Keyword(s):  
Activation Energy ◽  
Melting Point ◽  
Substrate Temperature ◽  
High Melting ◽  
Arrhenius Behavior ◽  
High Activation ◽  
High Melting Point ◽  
Mbe Growth ◽  
Sublimation Energy ◽  
Initial Nucleation

AbstractRHEED intensity oscillations observed during MBE growth of CaF2 on Si(111) and PbSe on CaF2/Si(111) are presented. The effects of substrate temperature and initial nucleation procedure are investigated. Strong temporal oscillations of the specular beam intensity are found to be most readily observed at temperatures below 200°C for both CaF2 and PbSe. Growth rates measured as a function of cell temperatures exhibit Arrhenius behavior with activation energies of 5.0 eV and 1.93 eV for CaF2 and PbSe, respectively. The relatively high activation energy obtained for CaF2 is consistent with the high melting point and sublimation energy of ionic fluorides.

scholarly journals Simulation of Mechanical Deformation and Tribology of Nano-Thin Amorphous Hydrogenated Carbon (a:Ch) Films Using Molecular Dynamics

1996 ◽  
Vol 436 ◽  
Author(s):  
J. N. Glosli ◽  
M. R. Philpott ◽  
J. Belak
Keyword(s):  
Molecular Dynamics ◽  
Substrate Temperature ◽  
Computer Simulations ◽  
Mechanical Deformation ◽  
Porous Graphite ◽  
Pure Carbon ◽  
Substrate Temperatures ◽  
Amorphous Hydrogenated Carbon ◽  
Deposition Energy

AbstractMolecular dynamics computer simulations are used to study the effect of substrate temperature on the microstructure of deposited amorphous hydrogenated carbon (a:CH) films. A transition from dense diamond-like films to porous graphite-like films is observed between substrate temperatures of 400K and 600K for a deposition energy of 20 eV. The dense a:CH film grown at 300K and 20 eV has a hardness (˜50 GPa) about half that of a pure carbon (a:C) film grown under the same conditions.

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

Highly near-infrared reflecting and transparent conducting ZnO : Ga films: substrate temperature effect

2008 ◽  
Vol 41 (5) ◽  
pp. 055302 ◽  
Author(s):  
Quan-Bao Ma ◽  
Zhi-Zhen Ye ◽  
Hai-Ping He ◽  
Li-Ping Zhu ◽  
Wei-Chang Liu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Near Infrared ◽  
Transparent Conducting

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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