scholarly journals Ohmic contacts to n-type and p-type gallium antimonide whiskers

2021 ◽  
Vol 11 (1) ◽  
pp. 1-6
Author(s):  
Anatoliy Druzhynin ◽  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Gallium Antimonide ◽  
Electrical Contacts ◽  
Contact Material ◽  
Pulse Shaper ◽  
Current Transmission ◽  
Flux Layer ◽  
P Type ◽  
A Current

The ohmic contacts to the n-type conductivity gallium antimonide whiskers were created due to a current pulse shaper. It was established that I–V characteristics of GaSb whiskers at low temperatures are linear, regardless of the direction of current transmission. That allows using the investigated techniques to create electrical contacts and study their electrophysical characteristics. GaSb samples with a diameter of 12 μm and 20 μm were studied at temperatures 4.2 K and 77 K. A slide table with bath and microfurnace was made for welding ohmic contacts to GaSb whiskers. Gold microwire with a diameter of 30 μm was used as a contact material. The melting was carried out under the flux layer. It was revealed that the fusion is one of the most suitable methods for creating contacts to the whiskers grown by gas transport reactions.

Low-Resistance Electrical Contacts to p-Type GaN by Using InxGa1-xN Cap Layers

2001 ◽  
Vol 693 ◽  
Author(s):  
Th. Gessmann ◽  
Y.-L. Li ◽  
J. W. Graff ◽  
E. F. Schubert ◽  
J. K. Sheu
Keyword(s):  
Contact Resistance ◽  
Electric Fields ◽  
Ohmic Contacts ◽  
Electrical Contacts ◽  
Specific Contact Resistance ◽  
Low Resistance ◽  
Transmission Line Method ◽  
Specific Contact ◽  
P Type ◽  
20 Nm

AbstractA novel type of low-resistance ohmic contacts is demonstrated utilizing polarization-induced electric fields in thin p-type InGaN layers on p-type GaN. An increase of the hole tunneling probability through the barrier and a concomitant significant decrease of the specific contact resistance can be attributed to a reduction of the tunneling barrier width in the InGaN capping layers due to the polarization-induced electric fields. The specific contact resistance of Ni (10 nm) / Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2 × 10-2 Ω cm2 and 6 × 10-3 & cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.

scholarly journals High Hole Mobility Polycrystalline GaSb Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1348
Author(s):  
Anya Curran ◽  
Farzan Gity ◽  
Agnieszka Gocalinska ◽  
Enrica Mura ◽  
Roger E. Nagle ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Gallium Antimonide ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Limited Mobility ◽  
Gasb Layer ◽  
P Type

In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is p-type, with a hole concentration in the range of 2 × 1016 to 2 × 1017 cm−3. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO2 in the range of 9–66 cm2/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm2/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO2 has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO2 displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in p-channel devices than for implementation in ICs.

The formation and structure of Pd2InP on InP

1990 ◽  
Vol 48 (4) ◽  
pp. 722-723
Author(s):  
Douglas G. Ivey ◽  
Lin Zhang ◽  
Ping Jian
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Ternary Phase ◽  
Semiconductor Surface ◽  
Valuable Component ◽  
Ternary Compounds ◽  
Type Iii ◽  
Annealing Conditions ◽  
Dopant Incorporation ◽  
P Type

Palladium appears to be an important component in contact metallizations to p-type III-V semiconductors. Several successful ohmic contacts containing Pd have been fabricated to p-type GaAs; e.g. Au/Pd/Zn/Pd to GaAs. Palladium is easily deposited on and reacts readily with GaAs, at relatively low temperatures, to form binary and ternary compounds. The formation of these compounds helps generate Ga vacancies in GaAs, necessary for dopant incorporation. Palladium also aids in the wetting of metals, such as Zn to GaAs, improving their adherance to the semiconductor surface. For the same reasons expressed above, Pd may also prove to be a valuable component in contact metallizations to p- type InP. Very little work has been done on the interaction between Pd and InP, however. Krishnan et al have reported on the formation of a Pd InP ternary phase, which is predominantly amorphous with some signs of crystallinity. The interaction between Pd and InP, under annealing conditions usually encountered in contact fabrication, is discussed in this paper. Particular emphasis is put on one ternary phase that forms during annealing, i.e Pd2InP.

The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
Verlyn Fischer ◽  
P.E. Viljoen ◽  
E. Ristolainen ◽  
P.H. Holloway ◽  
W.V. Lampert ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ohmic Contacts ◽  
Electrical Contacts ◽  
Interfacial Transport ◽  
Dopant Segregation ◽  
Current Voltage ◽  
Transport Barriers ◽  
P Type ◽  
Scanning Electron

ABSTRACTThe effect of heat treatments between 400°C and 500°C on electrical contacts of In, Ga, Pb, and AU to n- or p-GaAs, and Ni to n-GaAs have been studied using current-voltage (I-V), Auger electron spectroscopy and scanning electron microscopy. Ohmic contacts were formed between In and GaAs upon heating due to formation of an InGaAs surface layer with low interfacial transport barriers. The contacts between Ga or Pb and n- and p-GaAs remained rectifying due to a lack of interfacial reaction. Films of Au reacted with both n-and p-type GaAs resulting in rectangular "pits". This led to ohmic contacts only on n-type substrates due to segregation of the Si dopants to the surface of the decomposed GaAs "pits". Dopant segregation did not occur when Au reacted with p-GaAs or Ni reacted with n-GaAs, thus these contacts remained rectifying at lower doping densities (4 x 1017 cm-3).

Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures

1999 ◽  
Vol 46 (3) ◽  
pp. 605-611 ◽  
Author(s):  
L. Kassamakova ◽  
R.D. Kakanakov ◽  
I.V. Kassamakov ◽  
N. Nordell ◽  
S. Savage ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
P Type

Ohmic and Rectifying Contacts to n and p-type GaN Films

2002 ◽  
Vol 743 ◽  
Author(s):  
H. P. Hall ◽  
M. A. Awaah ◽  
A. Kumah ◽  
K. Das ◽  
F. Semendy
Keyword(s):  
Electron Beam ◽  
Ohmic Contacts ◽  
Deep Level ◽  
Electron Beam Evaporation ◽  
Electrical Contacts ◽  
Sputtered Films ◽  
Current Conduction ◽  
Deposition By Sputtering ◽  
P Type ◽  
Deposited Films

ABSTRACTElectrical contacts to both n and p-type GaN films have been investigated using electron-beam evaporated and sputtered films of metals such as Al, Au, Cr, Cu, Ni, Pt, and Ti. Films deposited by electron-beam evaporation for the n-type films with doping levels of 1 × 1018/cm3 and lower showed rectifying characteristics with all the metals studied with the exception of Al. Aluminum contact diodes were ohmic in the as-deposited state. The Pt rectifying contact was near-ideal with an ideality factor close to 1.0. Ideality factors for the other metals were much greater than 1. This deviation from thermionic behavior was interpreted as space charge limited current conduction in the presence of deep-level states. Sputtered films showed very similar characteristics to electron-beam deposited films, with the exception of Ti. The Ti contact was ohmic in the as-deposited state. Non-linear Cu contacts to n-type films became ohmic on annealing. However, for p-type films, Ar ion sputter-cleaning prior to metal deposition by sputtering created ohmic contacts with Cu and Pt. Low resistance ohmic contacts were achieved by ion implantation and anneal of Si in n-type and Mg in p-type films, prior to metallization. The implant parameters and anneal temperatures are currently being optimized.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

scholarly journals Characteristics of Al/Ge Schottky and ohmic contacts at low temperatures

2021 ◽  
Vol 130 ◽  
pp. 105820
Author(s):  
Shreyas Pitale ◽  
Manoranjan Ghosh ◽  
S.G. Singh ◽  
Husain Manasawala ◽  
G.D. Patra ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts
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