The formation and structure of Pd2InP on InP

1990 ◽  
Vol 48 (4) ◽  
pp. 722-723
Author(s):  
Douglas G. Ivey ◽  
Lin Zhang ◽  
Ping Jian
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Ternary Phase ◽  
Semiconductor Surface ◽  
Valuable Component ◽  
Ternary Compounds ◽  
Type Iii ◽  
Annealing Conditions ◽  
Dopant Incorporation ◽  
P Type

Palladium appears to be an important component in contact metallizations to p-type III-V semiconductors. Several successful ohmic contacts containing Pd have been fabricated to p-type GaAs; e.g. Au/Pd/Zn/Pd to GaAs. Palladium is easily deposited on and reacts readily with GaAs, at relatively low temperatures, to form binary and ternary compounds. The formation of these compounds helps generate Ga vacancies in GaAs, necessary for dopant incorporation. Palladium also aids in the wetting of metals, such as Zn to GaAs, improving their adherance to the semiconductor surface. For the same reasons expressed above, Pd may also prove to be a valuable component in contact metallizations to p- type InP. Very little work has been done on the interaction between Pd and InP, however. Krishnan et al have reported on the formation of a Pd InP ternary phase, which is predominantly amorphous with some signs of crystallinity. The interaction between Pd and InP, under annealing conditions usually encountered in contact fabrication, is discussed in this paper. Particular emphasis is put on one ternary phase that forms during annealing, i.e Pd2InP.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 825-828
Author(s):  
Alessia Frazzetto ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
R. Lo Nigro ◽  
M. Saggio ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Electrical Parameters ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Specific Contact ◽  
Activation Annealing ◽  
P Type ◽  
Post Implantation

This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs.

Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-SiC

2021 ◽  
Vol 1045 ◽  
pp. 186-193
Author(s):  
Meng Qian Xue ◽  
Cai Ping Wan ◽  
Nian Nian Ge ◽  
Heng Yu Xu
Keyword(s):  
Surface Morphology ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Alloy System ◽  
Ohmic Resistance ◽  
Annealing Conditions ◽  
Atomic Force ◽  
Metal Composition ◽  
Specific Contact ◽  
P Type

In order to understand the contribution of various metals in the formation of ohmic contacts, Ni/Al/Ti ohmic contacts on n-type 4H-SiC in terms of a different annealing temperature and Ti composition are investigated, which is more difficult to form than p-type ohmic contact. The formation of the Ni/Al/Ti metal alloy system is much more sensitive to metal composition than annealing conditions. With the increase of metal composition, the contact with a high Ti content yields a lower specific contact resistivity compared with the low Ti contact. The annealed surface morphology and phase resultants were examined by scanning electron microscopy (SEM) and atomic force microscope (AFM), respectively. With the increase of Ti components, the surface morphology of the samples becomes more uniform and smoother, while the surface roughness remains unchanged. It implies that Ti metal can not only reduce the ohmic resistance, but also protect the surface of the sample and maintain the roughness.

scholarly journals Ohmic contacts to n-type and p-type gallium antimonide whiskers

2021 ◽  
Vol 11 (1) ◽  
pp. 1-6
Author(s):  
Anatoliy Druzhynin ◽  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Gallium Antimonide ◽  
Electrical Contacts ◽  
Contact Material ◽  
Pulse Shaper ◽  
Current Transmission ◽  
Flux Layer ◽  
P Type ◽  
A Current

The ohmic contacts to the n-type conductivity gallium antimonide whiskers were created due to a current pulse shaper. It was established that I–V characteristics of GaSb whiskers at low temperatures are linear, regardless of the direction of current transmission. That allows using the investigated techniques to create electrical contacts and study their electrophysical characteristics. GaSb samples with a diameter of 12 μm and 20 μm were studied at temperatures 4.2 K and 77 K. A slide table with bath and microfurnace was made for welding ohmic contacts to GaSb whiskers. Gold microwire with a diameter of 30 μm was used as a contact material. The melting was carried out under the flux layer. It was revealed that the fusion is one of the most suitable methods for creating contacts to the whiskers grown by gas transport reactions.

Ohmic Contacts to p-Type III-V Semiconductors for the Base of Heterojunction Bipolar Transistors

2019 ◽  
Vol 3 (5) ◽  
pp. 47-56
Author(s):  
Suzanne E. Mohney ◽  
Eric Lysczek ◽  
Sammy Wang ◽  
Joshua Robinson
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Type Iii ◽  
P Type

Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

1999 ◽  
Vol 61-62 ◽  
pp. 291-295 ◽  
Author(s):  
L Kassamakova ◽  
R Kakanakov ◽  
N Nordell ◽  
S Savage ◽  
A Kakanakova-Georgieva ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Chemical Properties ◽  
Annealing Conditions ◽  
P Type ◽  
And Chemical Properties

Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures

1999 ◽  
Vol 46 (3) ◽  
pp. 605-611 ◽  
Author(s):  
L. Kassamakova ◽  
R.D. Kakanakov ◽  
I.V. Kassamakov ◽  
N. Nordell ◽  
S. Savage ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
P Type

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

2012 ◽  
Vol 711 ◽  
pp. 203-207
Author(s):  
Fabrizio Roccaforte ◽  
Alessia Frazzetto ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Surface Preparation ◽  
Wide Band ◽  
Wide Band Gap ◽  
Annealing Conditions ◽  
High Ionization ◽  
Metallic Compounds ◽  
P Type ◽  
The Impact

The formation of good Ohmic contacts to p-type silicon carbide (SiC) and gallium nitride (GaN) is an important physical and technological concern, because of the difficulty to find metals with low Schottky barriers to p-type wide band gap materials, and due to the high ionization energies of p-type dopant impurities. Typically, to overcome these issues, alloyed metallic compounds are used. In this work, the electrical properties of alloyed Ohmic contacts to p-type (Al-implanted) 4H-SiC and p-type (Mg-doped epilayers) GaN are presented and correlated with their microstructure. The impact of the surface preparation and annealing conditions are discussed, reporting the cases of Al/Ti contacts to p-SiC and Au/Ni contacts to p-GaN. The electrical characterization as a function of temperature allowed to define the dominant transport mechanism and to determine the barrier heights.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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