scholarly journals From atomic-scale interfaces - to new nanomaterials

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Nikolay Plusnin
Keyword(s):  
Transition Metal ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Experimental Results ◽  
Atomic Scale ◽  
New Type ◽  
Low Dimensional ◽  
Silicon Interface

The problem of the synthesis of new type nanomaterials in the form of nanocoatings with subnanometric heterogeneity has been formulated. It has been presented an analysis of influences of physical vapor deposition in ultrahigh vacuum on the process of intermixing a film with a substrate, including the results, which has been obtained under the formation of transition metal – silicon interface. The generalization of the obtained experimental results allowed to develop an approach to the development of new nanocoatings with low-dimensional heterogeneity. The principles of constructing such low-dimensional nanocoatings, their properties and their possible applications are considered. 

scholarly journals From atomic-scale interfaces — To new nanomaterials

2019 ◽  
Vol 2 (2) ◽  
pp. 54
Author(s):  
Nikolay Plusnin
Keyword(s):  
Transition Metal ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Experimental Results ◽  
Atomic Scale ◽  
New Type ◽  
Low Dimensional ◽  
Silicon Interface

The problem of the synthesis of new type nanomaterials in the form of nano-coatings with sub-nanometric heterogeneity has been formulated. It has been presented an analysis of influences of physical vapor deposition in ultrahigh vacuum on the process of intermixing a film with a substrate, including the results, which has been obtained under the formation of transition metal – silicon interface. The generalization of the obtained experimental results develops an approach to the development of new nano-coatings with low-dimensional heterogeneity. The principles of constructing such low-dimensional nano-coatings, their properties and possible applications are considered. 

Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field

2009 ◽  
Vol 289-292 ◽  
pp. 319-322 ◽  
Author(s):  
Yusuke Iguchi ◽  
Masao Ono ◽  
Satoru Okayasu ◽  
Tsutomu Mashimo
Keyword(s):  
Gravitational Field ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Atomic Scale ◽  
Semiconductor Materials ◽  
Strong Gravitational Field ◽  
Impurity Atoms ◽  
Graded Structure ◽  
Alloys And Compounds ◽  
Crystal Wafer

An atomic-scale graded structure has been formed by sedimentation of substitutional atoms under an ultra-strong gravitational field of 1 million G level in alloys and compounds. In this study, we investigate the sedimentation of impurity atoms in semiconductor materials under a strong gravitational field. High-temperature ultracentrifuge experiments (0.59×106 G, 400°C, 60 hours) have been performed on an InSb single crystal wafer which surface was coated with Ge by means of Physical Vapor Deposition (PVD). It was observed that the penetration depth of diffused Ge atoms under the gravitational field was several times larger than under terrestrial field at the same temperatures.

Wetting Layer and Formation of Metal - Semiconductor Interface

2018 ◽  
Vol 386 ◽  
pp. 9-14 ◽  
Author(s):  
Nikolay I. Plusnin
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Complex Analysis ◽  
Wetting Layer ◽  
Semiconductor Interface ◽  
Vapor Phase Deposition ◽  
Silicon Interface ◽  
Electron Energy Loss

A wetting layer with a nanophase structure was detected and identified before the first bulk phase during the formation of the metal-silicon interface by vapor-phase deposition at room temperature of the substrate. This became possible due to the developed technique for complex analysis of the structural-chemical state of the surface/ interface with help of Auger electron spectroscopy and electron energy loss spectroscopy, and also due to the method of physical vapor deposition at low temperature of vapor. The discovery this wetting layer and stage of its formation fundamentally changes the approach to the formation of contact between metal and silicon.

Magnesium Films Deposited on Different Substrates via Arc PVD Method

2007 ◽  
Vol 546-549 ◽  
pp. 519-522 ◽  
Author(s):  
Gizem Oktay ◽  
Ozgur Duygulu ◽  
Ali Arslan Kaya
Keyword(s):  
Silicon Wafer ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Experimental Results ◽  
Chemical Compositions

A hybrid biomaterial was produced by dressing titanium with magnesium in order to utilize the most advantageous properties of both materials. Titanium was coated with magnesium via arc physical vapor deposition (PVD) method, and a third agent between titanium and magnesium, as a bonding medium was also used. The microstructures and chemical compositions of magnesium arc-PVD coated Ti-6Al-4V alloy and silicon wafer were investigated. The experimental results showed that Mg can be deposited onto Ti-6Al-4V alloy and on silicon wafer by using arc-PVD method.

Atomic-scale engineering of chemical-vapor-deposition-grown 2D transition metal dichalcogenides for electrocatalysis

2020 ◽  
Vol 13 (6) ◽  
pp. 1593-1616 ◽  
Author(s):  
Qichen Wang ◽  
Yongpeng Lei ◽  
Yuchao Wang ◽  
Yi Liu ◽  
Chengye Song ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrocatalytic Properties ◽  
Metal Dichalcogenides

Focusing on the atomic-scale engineering of CVD grown 2D TMDs, we discuss the six engineering strategies to tailor the electronic structure, conductivity and electrocatalytic properties in detail. Finally, challenges and perspectives are addressed.

Atomically Resolved Imaging of Epitaxial CaF2 on Si(111) using Noncontact Atomic Force Microscope

2004 ◽  
Vol 838 ◽  
Author(s):  
Yoshihide Seino ◽  
Masayuki Abe ◽  
Seizo Morita
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Force Microscope ◽  
Calcium Fluoride ◽  
Ultrahigh Vacuum ◽  
Experimental Results ◽  
Atomic Scale ◽  
Line Profiles ◽  
Topographic Image ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTEpitaxial calcium fluoride (CaF2) film surfaces grown on Si(111) were imaged with the atomic force microscopy operated in the noncontact mode in ultrahigh vacuum. Our experimental results reproducibly reveal two kind of topographic patterns with the atomic scale contrast. The line profiles obtained from the topographic image exhibit that the change of tip-polarity plays the important role for obtaining two atomic corrugation patterns by considering the interaction between the tip and the two topmost surface atoms. It is similar to the results from the literature obtained on the cleaved CaF2 surface with both positively and negatively terminated tip.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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