Energy Spectra of CdS/Cd1-xZnx S Nano Dot Under The Influence of Magnetic Field

2014 ◽  
Vol 4 (1) ◽  
pp. 460-466
Author(s):  
P. Elangovan ◽  
M. Balakumari ◽  
A. Milton Franklin Benial
Keyword(s):  
Magnetic Field ◽  
Effective Mass ◽  
Applied Magnetic Field ◽  
Theoretical Study ◽  
Shallow Donor ◽  
Binding Energies ◽  
Energy Spectra ◽  
Mass Approximation ◽  
Zn Concentration ◽  
Frame Work

We present a theoretical study on shallow donor binding energies of CdS/ CdZnS nano dot as a strength of  applied magnetic field along Z direction for various Zn concentration. Calculations are carried out by using the technique of variational ansatz within the frame work of effective mass approximation. Our results show that the binding energies are drastically affected by the dot radius, the strength of magnetic field and concentrations.

ABSORPTION SPECTRUM OF AN EXCITON IN AN InxGa1 - xAs/GaAs QUANTUM DOT IN THE PRESENCE OF A MAGNETIC FIELD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1785-1789
Author(s):  
J. C. RODRÍGUEZ ◽  
K. FONSECA ◽  
R. R. REY-GONZÁLEZ
Keyword(s):  
Magnetic Field ◽  
Absorption Spectrum ◽  
Quantum Dot ◽  
Effective Mass ◽  
Coulomb Interaction ◽  
Applied Magnetic Field ◽  
Interaction Matrix ◽  
Matrix Elements ◽  
Mass Approximation ◽  
Gaas Quantum Dot

We calculate the absorption spectrum of a single exciton, confined in an In x Ga 1 - x As/GaAs disk-shaped quantum dot, as a function of the strength of an applied magnetic field. Exciton eigenstates are obtained by numerical diagonalization of the Hamiltonian, within the effective mass approximation. A correction in the expression of the Coulomb interaction matrix elements is verified.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Shallow Donor Binding Energies in Semiconductors in a Magnetic Field

1989 ◽  
Vol 154 (2) ◽  
pp. 643-647 ◽  
Author(s):  
B. Sukumar ◽  
K. Navaneethakrishnan
Keyword(s):  
Magnetic Field ◽  
Shallow Donor ◽  
Binding Energies

A Unified Treatment of The Thermal Donor Hierarchies in Silicon and Germanium

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
James W. Corbett
Keyword(s):  
Dielectric Constant ◽  
Effective Mass ◽  
Ground State ◽  
Shallow Donor ◽  
Binding Energies ◽  
Electron Effective Mass ◽  
Perturbation Model ◽  
Thermal Donor ◽  
Silicon And Germanium ◽  
Oxygen Atoms

ABSTRACTThe hierarchies of thermal donor binding energies produced by annealing oxygen-containing silicon or germanium at ca. 450°C are explained by using a generalized perturbation model which involves a standard repulsion parameter for the interaction between agglomerating oxygen atoms and the shallow donor electrons. This model is capable of fitting the ground state ladders for both charge states of the thermal donors in both Si and Ge, since differences between the two ladders can–ee explained entirely by the change in the electron-effective-mass and dielectric constant of the host.

THE EFFECT OF POSITION DEPENDENT EFFECTIVE MASS OF HYDROGENIC IMPURITIES IN PARABOLIC GaAs/GaAlAs QUANTUM DOTS IN A STRONG MAGNETIC FIELD

2009 ◽  
Vol 23 (26) ◽  
pp. 5109-5118 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Binding Energy ◽  
Effective Mass ◽  
Bound States ◽  
Mass Approximation ◽  
Infinite Case ◽  
Dependent Mass ◽  
The Magnetic Field ◽  
Peak Value

The binding energy of shallow hydrogenic impurities in parabolic GaAs/GaAlAs quantum dots is calculated as a function of dot radius in the influence of magnetic field. The binding energy has been calculated following a variational procedure within the effective-mass approximation. Calculations are presented with constant effective-mass and position dependent effective masses. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. The results show that the impurity binding energy (i) increases as the dot radius decreases for the infinite case, (ii) reaches a peak value around 1R* as the dot radius decreases and then diminishes to a limiting value corresponding to the radius for which there are no bound states in the well for the infinite case, and (iii) increases with the magnetic field. Also it is found that (i) the use of constant effective mass (0.067 m0) is justified for dot sizes ≥ a* where a* is the effective Bohr radius which is about 100 Å for GaAs , in the estimation of ionization energy and (ii) the binding energy shows complicated behavior when the position dependent mass is included for the dot size ≤ a*. These results are compared with the available existing literatures.

Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots

1997 ◽  
Vol 11 (15) ◽  
pp. 673-679 ◽  
Author(s):  
Ecaterina C. Niculescu ◽  
Ana Niculescu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Effective Mass ◽  
Coulomb Potential ◽  
Adjustable Parameter ◽  
Binding Energies ◽  
Central Cell ◽  
Shallow Donors ◽  
Mass Approximation ◽  
Donor States

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga 1-x Al x As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.

THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD

2011 ◽  
Vol 25 (32) ◽  
pp. 2451-2459 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Field Strength ◽  
Variational Method ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Semiconductor Quantum Wells ◽  
The Magnetic Field

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.

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