scholarly journals Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

2014 ◽  
Vol 14 (3) ◽  
pp. 121-134 ◽  
Author(s):  
Lina Rambausek ◽  
Els Bruneel ◽  
Gilbert De Mey ◽  
Lieva Van Langenhove
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Force Microscopy ◽  
Layered Architecture ◽  
Atomic Force ◽  
Production Techniques

Abstract In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET) can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP) and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM). Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

scholarly journals Electrohydrodynamic-Jet (EHD)-Printed Diketopyrrolopyroole-Based Copolymer for OFETs and Circuit Applications

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1759 ◽  
Author(s):  
Kyunghun Kim ◽  
Se Hyun Kim ◽  
Hyungjin Cheon ◽  
Xiaowu Tang ◽  
Jeong Hyun Oh ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuit ◽  
Ring Oscillator ◽  
Organic Field Effect Transistors ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supply Condition

We report the employment of an electrohydrodynamic-jet (EHD)-printed diketopyrrolopyrrole-based copolymer (P-29-DPPDTSE) as the active layer of fabricated organic field-effect transistors (OFETs) and circuits. The device produced at optimal conditions showed a field-effect mobility value of 0.45 cm2/(Vs). The morphologies of the printed P-29-DPPDTSE samples were determined by performing optical microscopy, X-ray diffraction, and atomic force microscopy experiments. In addition, numerical circuit simulations of the optimal printed P-29-DPPDTSE OFETs were done in order to observe how well they would perform in a high-voltage logic circuit application. The optimal printed P-29-DPPDTSE OFET showed a 0.5 kHz inverter frequency and 1.2 kHz ring oscillator frequency at a 40 V supply condition, indicating the feasibility of its use in a logic circuit application at high voltage.

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Solid Substrate ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Micro Patterning

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

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