scholarly journals Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
Bing Li ◽  
Genhua Pan ◽  
Shakil A. Awan ◽  
Neil Avent
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Production Method ◽  
Dielectric Substrate ◽  
Industrial Applications ◽  
Large Area ◽  
Sensor Device ◽  
Solid Carbon Source ◽  
Device Applications ◽  
Semiconductor Fabrication

AbstractHere we review commonly used techniques for the production of large area and high quality graphene to meet the requirements of industrial applications, including epitaxial growth on SiC, chemical vapour deposition (CVD) on transition metals and growth from solid carbon source. The review makes a comparison of the growth mechanisms, quality (such as mobility and homogeneity) and properties of the resultant graphene, limitations and the prospect of each production method. A particular focus of the review is on direct (transfer free) growth on dielectric substrate as this is potentially one of the promising techniques for graphene production which can readily be integrated into existing semiconductor fabrication processes.

Wear of HFACVD Diamond Coated Tools in Turning of MMC

Volume 3 ◽  
2004 ◽  
Author(s):  
A. Boschetto ◽  
F. Veniali
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Soft Materials ◽  
Industrial Applications ◽  
Ferrous Alloys ◽  
Coated Tools ◽  
Hot Filament ◽  
Pcd Tools

HFACVD (Hot Filament Assisted Chemical Vapour Deposition) is a typical technology which permits the coating of soft materials with hard or super hard layers which lead to ultra wear resistant tools. Typical tools obtained with this technology are based on a diamond layer. Unfortunately, these tools are not suitable for machining of ferrous alloys due to chemical issues, yet their use is very promising in the machining of composites based on aluminium matrix and reinforced with alumina or silicon carbide. In this paper HFACVD diamond coated, WC and PCD tools are used in turning of Al2O3/Al composites until they are completely worn out. The results show that the diamond tools can be competitive with both the WC and PCD ones in the industrial applications.

scholarly journals Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric Pressure

2010 ◽  
Vol 61 (5) ◽  
pp. 311-313 ◽  
Author(s):  
Ondřej Jašek ◽  
Petr Synek ◽  
Lenka Zajíčková ◽  
Marek Eliáš ◽  
Vít Kudrle
Keyword(s):  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Carbon Nanostructures ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Industrial Applications ◽  
Wide Range ◽  
Microelectronics Industry ◽  
Vacuum Systems ◽  
Arc Discharges

Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric PressureCarbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.

scholarly journals Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

2018 ◽  
Vol 189 ◽  
pp. 11006
Author(s):  
Phan Thi Tuoi ◽  
Pham Xuan Hien ◽  
Do Anh Tuan
Keyword(s):  
Electron Transport ◽  
Binary Mixtures ◽  
Plasma Polymerization ◽  
Vapour Deposition ◽  
Transport Coefficients ◽  
Chemical Vapour ◽  
Industrial Applications ◽  
Inert Gases ◽  
Number Density ◽  
Electron Transport Coefficients

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.

scholarly journals A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7590
Author(s):  
Luca Seravalli ◽  
Matteo Bosi
Keyword(s):  
Transition Metal ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapour ◽  
Two Dimensional ◽  
Large Area ◽  
Reliable Technique ◽  
Metal Dichalcogenides

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

Promoter-free synthesis of monolayer MoS2 by chemical vapour deposition

CrystEngComm ◽  
2018 ◽  
Vol 20 (30) ◽  
pp. 4249-4257 ◽  
Author(s):  
Paulraj Gnanasekar ◽  
Dharmaraj Periyanagounder ◽  
Anbarasan Nallathambi ◽  
Sadhasivam Subramani ◽  
Manivel Palanisamy ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Large Scale ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Controlled Growth ◽  
Monolayer Mos2 ◽  
Semiconductor Substrates ◽  
Device Applications

Piranha treatment provides an ideal platform for the controlled growth of large-scale monolayer MoS2 on dielectric and semiconductor substrates for device applications.

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