scholarly journals Multilayer optical interconnects design: switching components and insertion loss reduction approach

2018 ◽  
Vol 69 (3) ◽  
pp. 226-232
Author(s):  
Mohammad Reza Mokhtari ◽  
Hamed Baghban ◽  
Hadi Soofi

Abstract The next generation of chip multi-processors point to the integration of thousands of processing cores, demanding high- performance interconnects, and growing the interest in optically interconnected networks. In this article we report on an interlayer silicon-based switch design that switches two channels simultaneously from an input waveguide into one of the two output ports. The introduced interlayer switch allows to design interconnects with previously unattainable functionality, higher performance and robustness, and smaller footprints with low insertion loss (< 1 dB), and high extinction ratio (> 18 dB). Interlayer switching combined with wavelength-routed and circuit-switched networks yield a low latency and low- loss interconnect architecture. Quantitative comparison between the proposed interconnect architecture and other reported structures in terms of loss, number of wavelengths and microring resonators reveals the proficiency of our design. For a 64-core interconnect implemented in 4 layers, the proposed architecture indicates an average loss reduction up to 42% and 43% with respect to single-layer lambda-router and GWOR.

2021 ◽  
Vol 11 (20) ◽  
pp. 9402
Author(s):  
Jin-Fa Chang ◽  
Yo-Sheng Lin

In this paper, we demonstrate a low-loss and high-linearity DC-38 GHz CMOS SPDT switch for 5G multi-band communications in 0.18 μm CMOS. Traveling-wave matching (CLCL network) is used for the output-port (ports 2 and 3) matching and isolation enhancement, while π-matching (CLC matching) is adopted for the input-port (port 1) matching. Positive/negative gate-bias is adopted for linearity enhancement because larger Pin (i.e., AC signal with larger negative Vin) is required to conduct the off-state series switch transistor. Negative-body bias is used for insertion-loss reduction because the off-state series switch transistor is closer to an open state. The SPDT switch achieves insertion loss of 0.4–1.4 dB, 3.6–4.3 dB, and 4.5–5.9 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. Moreover, the SPDT switch achieves isolation of 37.5–59.4 dB, 25.7–28.7 dB, and 24.3–25.2 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. At 28 GHz, the SPDT switch achieves remarkable input 1-dB compression point (IP1dB) of 25.6 dBm, close to the simulated one (28 dBm). To the authors’ knowledge, this is one of the best IP1dB results ever reported for millimeter-wave (mm-wave) SPDT switches.


2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Ju Seong Park ◽  
Wahab Mohyuddin ◽  
Hyun Chul Choi ◽  
Kang Wook Kim

A design method of narrow bandpass filters (NBPFs) of 4–6% bandwidth with ultrawideband suppression of harmonic passbands, utilizing two cascaded step impedance resonators (SIRs) in a suspended stripline, is proposed in this paper. The proposed design utilized the characteristics of a suspended stripline, which provides a much higher characteristic impedance ratio as compared with that of the microstripline, enabling ultrawideband harmonic suppression. As an example of the NBPF, a filter with a passband center frequency f0 of 0.75 GHz and bandwidth of 5% was implemented and proved to suppress the harmonic passbands up to 13.5 f0. Since the proposed filter was implemented on the suspended stripline, the passband insertion loss was only −0.9 dB, which is low as compared with other previous designs. The proposed filter is a compact high-performance low-loss NBPF, which can be applicable to various wireless systems.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Anu Kumari ◽  
Vivek Kumar Srivastava ◽  
Amrindra Pal ◽  
Sandeep Sharma

Abstract In this work, a high-performance multioperation bit-manipulator is presented. The presented electro-optical design can perform several bit-manipulations such as bidirectional bit-shifting, bit-rotation, multiply-by-2 and divide-by-2, and sequence designing operation. The technique relies on the electrooptic principle in lithium niobate. Lithium niobate-based waveguides have been used to design Mach–Zehnder interferometer, which is the fundamental optical switching element of the whole model. Extinction ratio, contrast ratio, and insertion loss values computed for the simulated results are 29.16 dB, 29.48 dB, and 0.77 dB, respectively.


2015 ◽  
Vol 42 ◽  
pp. 135-144 ◽  
Author(s):  
Cheng-Hung Hsieh ◽  
Yu-Ting Chu ◽  
Min-Jyun Huang ◽  
Chien-Ming Kuo ◽  
Keh-Chyang Leou

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1302
Author(s):  
Zhiyong Wu ◽  
Lei Zhang ◽  
Tingyin Ning ◽  
Hong Su ◽  
Irene Ling Li ◽  
...  

Surface plasmon polaritons (SPPs) have been attracting considerable attention owing to their unique capabilities of manipulating light. However, the intractable dispersion and high loss are two major obstacles for attaining high-performance plasmonic devices. Here, a graphene nanoribbon gap waveguide (GNRGW) is proposed for guiding dispersionless gap SPPs (GSPPs) with deep-subwavelength confinement and low loss. An analytical model is developed to analyze the GSPPs, in which a reflection phase shift is employed to successfully deal with the influence caused by the boundaries of the graphene nanoribbon (GNR). It is demonstrated that a pulse with a 4 μm bandwidth and a 10 nm mode width can propagate in the linear passive system without waveform distortion, which is very robust against the shape change of the GNR. The decrease in the pulse amplitude is only 10% for a propagation distance of 1 μm. Furthermore, an array consisting of several GNRGWs is employed as a multichannel optical switch. When the separation is larger than 40 nm, each channel can be controlled independently by tuning the chemical potential of the corresponding GNR. The proposed GNRGW may raise great interest in studying dispersionless and low-loss nanophotonic devices, with potential applications in the distortionless transmission of nanoscale signals, electro-optic nanocircuits, and high-density on-chip communications.


Author(s):  
Venkatesh Piradi ◽  
Feng Yan ◽  
Xunjin Zhu ◽  
Wai-Yeung Raymond Wong

Organic solar cells (OSCs) have been considered as a promising cost-effective alternative to silicon-based solar cell counterparts due to their lightweight, mechanical flexibility, and easy fabrication features. Over the past...


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.


Optik ◽  
2019 ◽  
Vol 194 ◽  
pp. 163069 ◽  
Author(s):  
Kawsar Ahmed ◽  
Md. Ferdous ◽  
Md. Nazmul Hossen ◽  
Bikash Kumar Paul ◽  
I.S. Amiri ◽  
...  

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  

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