scholarly journals High Linearity DC-38 GHz CMOS SPDT Switch

2021 ◽  
Vol 11 (20) ◽  
pp. 9402
Author(s):  
Jin-Fa Chang ◽  
Yo-Sheng Lin
Keyword(s):  
Millimeter Wave ◽  
Insertion Loss ◽  
Traveling Wave ◽  
Input Port ◽  
Gate Bias ◽  
Loss Reduction ◽  
Low Loss ◽  
High Linearity ◽  
Wave Matching ◽  
Series Switch

In this paper, we demonstrate a low-loss and high-linearity DC-38 GHz CMOS SPDT switch for 5G multi-band communications in 0.18 μm CMOS. Traveling-wave matching (CLCL network) is used for the output-port (ports 2 and 3) matching and isolation enhancement, while π-matching (CLC matching) is adopted for the input-port (port 1) matching. Positive/negative gate-bias is adopted for linearity enhancement because larger Pin (i.e., AC signal with larger negative Vin) is required to conduct the off-state series switch transistor. Negative-body bias is used for insertion-loss reduction because the off-state series switch transistor is closer to an open state. The SPDT switch achieves insertion loss of 0.4–1.4 dB, 3.6–4.3 dB, and 4.5–5.9 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. Moreover, the SPDT switch achieves isolation of 37.5–59.4 dB, 25.7–28.7 dB, and 24.3–25.2 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. At 28 GHz, the SPDT switch achieves remarkable input 1-dB compression point (IP1dB) of 25.6 dBm, close to the simulated one (28 dBm). To the authors’ knowledge, this is one of the best IP1dB results ever reported for millimeter-wave (mm-wave) SPDT switches.

scholarly journals Wideband Waveguide-to-Microstrip Transition for mm-Wave Applications

2019 ◽  
Vol 22 (5) ◽  
pp. 17-32
Author(s):  
Andrey V. Mozharovskiy ◽  
Oleg V. Soykin ◽  
Aleksey A. Artemenko ◽  
Roman O. Maslennikov ◽  
Irina B. Vendik
Keyword(s):  
Experimental Investigation ◽  
Millimeter Wave ◽  
Insertion Loss ◽  
Communication Systems ◽  
60 Ghz ◽  
Feeding System ◽  
Frequency Range ◽  
Low Loss ◽  
Passive Components ◽  
Full Wave

Introduction. Increased data rate in modern communication systems can be achieved by raising the operational frequency to millimeter wave range where wide transmission bands are available. In millimeter wave communication systems, the passive components of the antenna feeding system, which are based on hollow metal waveguides, and active elements of the radiofrequency circuit, which have an interface constructed on planar printed circuit boards (PCB) are interconnected using waveguide-to-microstrip transition.Aim. To design and investigate a high-performance wideband and low loss waveguide-to-microstrip transition dedicated to the 60 GHz frequency range applications that can provide effective transmission of signals between the active components of the radiofrequency circuit and the passive components of the antenna feeding systemMaterials and methods. Full-wave electromagnetic simulations in the CST Microwave Studio software were used to estimate the impact of the substrate material and metal foil on the characteristics of printed structures and to calculate the waveguide-to-microstrip transition characteristics. The results were confirmed via experimental investigation of fabricated wideband transition samples using a vector network analyzer Results. The probe-type transition consist of a PCB fixed between a standard WR-15 waveguide and a back-short with a simple structure and the same cross-section. The proposed transition also includes two through-holes on the PCB in the center of the transition area on either side of the probe. A significant part of the lossy PCB dielectric is removed from that area, thus providing wideband and low-loss performance of the transition without any additional matching elements. The design of the transition was adapted for implementation on the PCBs made of two popular dielectric materials RO4350B and RT/Duroid 5880. The results of full-wave simulation and experimental investigation of the designed waveguide to microstrip transition are presented. The transmission bandwidth for reflection coefficient S11 < –10 dB is in excess of 50…70 GHz. The measured insertion loss for a single transition is 0.4 and 0.7 dB relatively for transitions based on RO4350B and RT/Duroid 5880.Conclusion. The proposed method of insertion loss reduction in the waveguide-to-microstrip transition provides effective operation due to reduction of the dielectric substrate portion in the transition region for various high-frequency PCB materials. The designed waveguide-to -microstrip transition can be considered as an effective solution for interconnection between the waveguide and microstrip elements of the various millimeter-wave devices dedicated for the 60 GHz frequency range applications.

Design and development of high linearity millimeter wave traveling-wave tube for satellite communications

2015 ◽  
Vol 24 (10) ◽  
pp. 104102
Author(s):  
Jun He ◽  
Ming-Guang Huang ◽  
Xian-Xia Li ◽  
Hai-Qiang Li ◽  
Lei Zhao ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Traveling Wave ◽  
Satellite Communications ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Design And Development ◽  
High Linearity

scholarly journals Multilayer optical interconnects design: switching components and insertion loss reduction approach

2018 ◽  
Vol 69 (3) ◽  
pp. 226-232
Author(s):  
Mohammad Reza Mokhtari ◽  
Hamed Baghban ◽  
Hadi Soofi
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Extinction Ratio ◽  
Single Layer ◽  
Loss Reduction ◽  
Low Loss ◽  
Switched Networks ◽  
Average Loss ◽  
Switch Design ◽  
Silicon Based

Abstract The next generation of chip multi-processors point to the integration of thousands of processing cores, demanding high- performance interconnects, and growing the interest in optically interconnected networks. In this article we report on an interlayer silicon-based switch design that switches two channels simultaneously from an input waveguide into one of the two output ports. The introduced interlayer switch allows to design interconnects with previously unattainable functionality, higher performance and robustness, and smaller footprints with low insertion loss (< 1 dB), and high extinction ratio (> 18 dB). Interlayer switching combined with wavelength-routed and circuit-switched networks yield a low latency and low- loss interconnect architecture. Quantitative comparison between the proposed interconnect architecture and other reported structures in terms of loss, number of wavelengths and microring resonators reveals the proficiency of our design. For a 64-core interconnect implemented in 4 layers, the proposed architecture indicates an average loss reduction up to 42% and 43% with respect to single-layer lambda-router and GWOR.

scholarly journals A Ku-Band Low-Loss Traveling-Wave Power Divider using a Hollow Substrate Integrated Waveguide and Its Microstrip Transition

2020 ◽  
Vol 20 (2) ◽  
pp. 131-138
Author(s):  
Sung-June Hong ◽  
Min-Pyo Lee ◽  
Seil Kim ◽  
Jun-Su Lim ◽  
Dong-Wook Kim
Keyword(s):  
Insertion Loss ◽  
Traveling Wave ◽  
Return Loss ◽  
Power Divider ◽  
Wave Power ◽  
Substrate Integrated Waveguide ◽  
Low Loss ◽  
Power Combining ◽  
Via Holes ◽  
Ku Band

In this paper, we present a Ku-band low-loss traveling-wave power divider that uses a hollow substrate integrated waveguide (HSIW). For easy connection with microstrip-based devices and circuits, a low-loss transition between the microstrip line and the HSIW structure was implemented using C-cut via holes at the discontinuity interface, which reduces radiation and leakage effects and improves mismatch performance. To validate the performance of the transition, a back-to-back microstrip-to-HSIW transition was designed, fabricated, and measured from 12.5 GHz to 15.5 GHz. The measured results showed a return loss of 18 dB or more and an insertion loss of 0.5 ± 0.07 dB. An HSIW-based, low-loss 1:3 traveling-wave power divider was fabricated and measured from 13.5 GHz to 14.5 GHz. The power divider showed a return loss of at least 21 dB, an insertion loss of 0.57 ± 0.03 dB, and a power combining efficiency of 87.1%–88.3%.

Eight-Millimeter Wave Band Traveling Wave Tube

1999 ◽  
Vol 53 (4-5) ◽  
pp. 155-159
Author(s):  
A. P. Kasyanenko
Keyword(s):  
Millimeter Wave ◽  
Traveling Wave ◽  
Wave Band ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Millimeter Wave Band

Configuration Study of New Low-Loss MM (Millimeter) Wave Guiding Structures.

1985 ◽  
Author(s):  
Cavour Yeh
Keyword(s):  
Millimeter Wave ◽  
Low Loss

scholarly journals Temperature Characterization of Liquid Crystal Dielectric Image Line Phase Shifter for Millimeter-Wave Applications

Crystals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 63
Author(s):  
Henning Tesmer ◽  
Rani Razzouk ◽  
Ersin Polat ◽  
Dongwei Wang ◽  
Rolf Jakoby ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Millimeter Wave ◽  
Insertion Loss ◽  
Phase Shifter ◽  
Ground Plane ◽  
Temperature Dependent ◽  
Differential Phase ◽  
Dependent Behavior ◽  
The Impact ◽  
Temperature Dependent Behavior

In this paper we investigate the temperature dependent behavior of a liquid crystal (LC) loaded tunable dielectric image guide (DIG) phase shifter at millimeter-wave frequencies from 80 GHz to 110 GHz for future high data rate communications. The adhesive, necessary for precise fabrication, is analyzed before temperature dependent behavior of the component is shown, using the nematic LC-mixture GT7-29001. The temperature characterization is conducted by changing the temperature of the LC DIG’s ground plane between −10∘C and 80 ∘C. The orientation of the LC molecules, and therefore the effective macroscopic relative permittivity of the DIG, is changed by inserting the temperature setup in a fixture with rotatable magnets. Temperature independent matching can be observed, while the insertion loss gradually increases with temperature for both highest and lowest permittivity of the LC. At 80 ∘C the insertion loss is up to 1.3dB higher and at −10∘C it is 0.6dB lower than the insertion loss present at 20 ∘C. In addition, the achievable differential phase is reduced with increasing temperature. The impact of molecule alignment to this reduction is shown for the phase shifter and an estimated 85% of the anisotropy is still usable with an LC DIG phase shifter when increasing the temperature from 20 ∘C to 80 ∘C. Higher reduction of differential phase is present at higher frequencies as the electrical length of the phase shifter increases. A maximum difference in differential phase of 72∘ is present at 110 GHz, when increasing the temperature from 20 ∘C to 80 ∘C. Nevertheless, a well predictable, quasi-linear behavior can be observed at the covered temperature range, highlighting the potential of LC-based dielectric components at millimeter wave frequencies.

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

2012 ◽  
Vol 33 (12) ◽  
pp. 125011
Author(s):  
Geliang Yang ◽  
Zhigong Wang ◽  
Zhiqun Li ◽  
Qin Li ◽  
Zhu Li ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Ultra Wideband ◽  
High Linearity ◽  
Input Matching ◽  
Matching Technique ◽  
Cmos Lna

Low insertion loss variable phase shifter for emerging millimeter-wave communication systems

2014 ◽  
Author(s):  
A. S. Abdellatif ◽  
N. Ranjkesh ◽  
M. Fahimnia ◽  
A. Taeb ◽  
S. Gigoyan ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Insertion Loss ◽  
Communication Systems ◽  
Phase Shifter ◽  
Variable Phase ◽  
Low Insertion Loss ◽  
Millimeter Wave Communication

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1261-1264 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Brett A. Hull ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Length ◽  
Gate Bias ◽  
Low Loss ◽  
Layer Resistance ◽  
Switching Characteristics ◽  
Mos Gate ◽  
Drift Layer

8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel resistance. The DMOSFETs were able to block 1.8 kV with the gate shorted to the source. At room temperature, a specific onresistance of 8 mΩ-cm2 was measured with a gate bias of 15 V. At 150 oC, the specific onresistance increased to 9.6 mΩ-cm2. The increase in drift layer resistance due to a decrease in bulk electron mobility was partly cancelled out by the negative shift in MOS threshold voltage at elevated temperatures. The device demonstrated extremely fast, low loss switching characteristics. A significant improvement in converter efficiency was observed when the 4H-SiC DMOSFET was used instead of an 800 V silicon superjunction MOSFET in a simple boost converter configuration.

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