Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Xue Zheng ◽  
Qing Li
Keyword(s):  
Thermal Oxidation ◽  
Annealing Temperature ◽  
Spectral Response ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
Metallic Films ◽  
Uv Detectors ◽  
Glass Substrates ◽  
Ultraviolet Detectors ◽  
Metal Semiconductor Metal

AbstractMetallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 °C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

The Structural and Surface Morphology of Annealed ZnO Films

2014 ◽  
Vol 903 ◽  
pp. 73-77
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Rosli Hussin ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Zuhairi Ibrahim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Coating Method ◽  
Afm Micrographs ◽  
Dip Coating Method

ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.

Microstructure and Photoluminescence Study of ZnO Films Prepared by Thermal Oxidation of Zn Metallic Films in Air

2013 ◽  
Vol 538 ◽  
pp. 22-25
Author(s):  
Ming Ji Shi ◽  
Dan Zhang ◽  
Lan Li Chen ◽  
Peng Hui Luo ◽  
Sa Xiao
Keyword(s):  
Thermal Oxidation ◽  
High Speed ◽  
Photoluminescence Spectrum ◽  
Zno Nanorods ◽  
Experimental Result ◽  
Zno Films ◽  
Silicon Substrates ◽  
Resistance Furnace ◽  
Metallic Films ◽  
Photoluminescence Study

In this thesis, Zn films were deposited on silicon substrates by high-speed galvanization, and then were treated in Muffle Resistance Furnace at 700°Cin an open-air environment. Polycrystalline ZnO films covered with ZnO nanorods were grown. Its morphologies were studied by SEM and its crystal structures were studied by XRD．Its photoluminescence spectrum was also measured．And possible mechanisms of the growth and the photoluminescence of ZnO nanorods were proposed to explain the experimental result．

Effects of Annealing on Properties of (Na,Mg):ZnO Thin Films Deposited by Sol-Gel Method

2014 ◽  
Vol 898 ◽  
pp. 33-36 ◽  
Author(s):  
Cai Zhen Zhang ◽  
Yong Gang Chen ◽  
Su Liu
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Coating Method ◽  
Method Effects ◽  
Structural Surface ◽  
Co Doped

Na/Mg co-doped (Na,Mg):ZnO films were fabricated on pyrex glass substrates by sol-gel spin-coating method. Effects of annealing on properties of the films were particularly investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmittance spectra. The internal stress of the films annealed at different temperature was calculated. Experimental and analytical results show that some NaCl freeze-out derivatives will appear on films when the annealing temperature is too low, with the increasing annealing temperature, the c-axis tensile stress is sharply decreased first, then the c-axis stress was changed into press stress and its value is increased continuously, so the structural, surface and the optical properties of the films improve first and deteriorate afterwards.

scholarly journals Synthesis of Ni-Doped ZnO Nanorod Arrays by Chemical Bath Deposition and Their Application to Nanogenerators

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2731 ◽  
Author(s):  
Yen-Lin Chu ◽  
Sheng-Joue Young ◽  
Liang-Wen Ji ◽  
Tung-Te Chu ◽  
Po-Hao Chen
Keyword(s):  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Evaporation Technique ◽  
Doped Zno ◽  
Cbd Method

Nanogenerators (NGs) based on Ni-doped ZnO (NZO) nanorod (NR) arrays were fabricated and explored in this study. The ZnO films were grown on indium tin oxide (ITO) glass substrates, and the NZO NRs were prepared by the chemical bath deposition (CBD) method. The samples were investigated via field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) spectral analysis. The results showed that the growth of NRs presented high-density single crystalline structures and were preferentially oriented in the c-axis direction. The optical characteristics of the NZO NRs were also measured by photoluminescence (PL) spectra. All samples exhibited two different emissions, including ultraviolet (UV) and green emissions. ITO etching paste was used to define patterns, and an electrode of Au film was evaporated onto the ITO glass substrates by the electron beam evaporation technique to assemble the NG device. In summary, ZnO NRs with Ni dopant (5 mM) showed significantly excellent performance in NGs. The optimal measured voltage, current, and power for the fabricated NGs were 0.07 V, 10.5 µA, and 735 nW, respectively.

Functional properties of ZnO films prepared by thermal oxidation of metallic films

2013 ◽  
Vol 113 (23) ◽  
pp. 234506 ◽  
Author(s):  
A. P. Rambu ◽  
V. Tiron ◽  
V. Nica ◽  
N. Iftimie
Keyword(s):  
Thermal Oxidation ◽  
Functional Properties ◽  
Zno Films ◽  
Metallic Films

Co-Doped ZnO Transparent Conductive Films for LCD and UV Detectors

2012 ◽  
Vol 500 ◽  
pp. 226-230 ◽  
Author(s):  
Yu Zhen Yuan ◽  
Hui Wang
Keyword(s):  
Liquid Crystal Display ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Uv Detectors ◽  
Transparent Conductive Films ◽  
Glass Substrates ◽  
Conductive Films ◽  
Photoconductive Detectors ◽  
Doped Zno ◽  
Co Doped

Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.

Influence of Annealing Temperature on the Properties of Nanostructure ITO Thin Films Prepared by Ion-Assisted Electron Beam Evaporation

2008 ◽  
Vol 55-57 ◽  
pp. 373-376
Author(s):  
Artorn Pokaipisit ◽  
M. Horprathum ◽  
Pichet Limsuwan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Surface Morphology ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Visible Range ◽  
Glass Substrates ◽  
Ito Thin Films

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 oC. At 350 oC, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 W-cm was obtained at a temperature of 350 oC.

scholarly journals Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air

2003 ◽  
Vol 94 (1) ◽  
pp. 354-358 ◽  
Author(s):  
Y. G. Wang ◽  
S. P. Lau ◽  
H. W. Lee ◽  
S. F. Yu ◽  
B. K. Tay ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Zno Films ◽  
Metallic Films ◽  
Photoluminescence Study

scholarly journals Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

RSC Advances ◽  
2019 ◽  
Vol 9 (14) ◽  
pp. 8039-8047 ◽  
Author(s):  
Peng Gu ◽  
Xinghua Zhu ◽  
Dingyu Yang
Keyword(s):  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
Coating Technology ◽  
Glass Substrates ◽  
Ultraviolet Detectors ◽  
Photoelectric Properties ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO (MZO) films were prepared on glass substrates using sol–gel dip-coating technology.

Structural, Optical and Electrical Properties of ZnO Films by Sol-Gel Method

2004 ◽  
Vol 449-452 ◽  
pp. 1009-1012 ◽  
Author(s):  
Cheng Zhu Lu ◽  
Jung Yohn Cho ◽  
Ho Jung Chang ◽  
Sang Woo Joo ◽  
Yong Sheng Wang
Keyword(s):  
Electrical Properties ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Glass Substrates ◽  
Zno Nanocrystal

We synthesized ZnO nanocrystal colloids adopting sol-gel method using zinc acetate dehydrate as precursor, and prepared ZnO films on glass substrates by a spin-coating technique. The effect of annealing temperature on the structure, optical and electrical properties has been studied. The crystallinity and morphologies were improved by the annealing. All film samples show high transmittance of above 80% in the wavelength ranging from 400nm to 1000nm. A minimum resistivity of 5.5x10-3 cm was obtained for the film annealed at 500oC. The crystallinity, oxygen vacancies, and nanocrystalline boundaries seems likely to be crucial factors for these properties

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