Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Open Physics ◽  
2011 ◽  
Vol 9 (6) ◽  
Author(s):  
Heike Angermann ◽  
Orman Gref ◽  
Bert Stegemann
Keyword(s):  
Atomic Oxygen ◽  
Silicon Oxide ◽  
Visible Region ◽  
Atomic Scale ◽  
Favourable Effect ◽  
Silicon Oxide Layer ◽  
Potential Applications ◽  
Wet Chemical ◽  
Pre Treatment ◽  
Impact Energies

AbstractUltrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).

Plasma Surface Treatment: Effects on Mechanical and Corrosion Protection Properties of Hybrid Sol–Gel Coatings

2019 ◽  
Author(s):  
R. Subasri
Keyword(s):  
Mechanical Properties ◽  
Corrosion Resistance ◽  
Surface Treatment ◽  
Corrosion Protection ◽  
Sol Gel ◽  
Surface Cleaning ◽  
Al Alloys ◽  
Plasma Surface ◽  
Wet Chemical ◽  
Pre Treatment

Surface cleaning and activation of substrates are two critical processes that affect the mechanical and corrosion resistance properties of protective coatings when deposited on the substrates. Surface cleaning removes the contaminants, for example, grease on the substrate, and surface activation introduces active bonds on the substrate thereby increasing the surface free energy. Conventionally, surface cleaning and activation of aluminum and its alloys are carried out by a wet chemical technique. A convenient and safe alternate to the wet chemical cleaning/activation would be to use plasma for the same purpose. Plasma surface pre-treatment greatly improves adhesion of coatings deposited, which is very vital for good corrosion protection and mechanical properties such as scratch and abrasion resistance. Cold and atmospheric air plasma treatments have been the most widely studied pre-treatments for Al alloys. This article will discuss the advancements in the use of plasma treatment on Al/Al alloys and its effect on corrosion resistance and mechanical properties of coatings deposited after the surface treatment.

scholarly journals Characterization and Applications of Diamond-like Nanocomposites: A Brief Review

2018 ◽  
Author(s):  
Kalyan Adhikary ◽  
Sayan Das ◽  
Debasish De ◽  
Anup Mondal ◽  
Utpal Gangopadhyay ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
High Ratio ◽  
Atomic Scale ◽  
Fourier Transformed Infrared Spectroscopy ◽  
Marine Energy ◽  
Deposition Parameters ◽  
Free Air ◽  
Wide Range ◽  
Scale Network

Diamond-like Nanocomposites (DLN) is a newly member in amorphous carbon (a:C) family. It consists of two or more interpenetrated atomic scale network structure. The amorphous silicon oxide (a:SiO) is incorporated within diamond-like carbon (DLC) matrix i.e. a:CH and both the network is interpenetrated by Si-C bond. Hence, the internal stress of deposited DLN film decreases remarkably compare to DLC. The diamond like properties has come due to deform tetrahedral carbon with sp3 configuration and high ratio of sp3 to sp2 bond. The DLN has excellent mechanical, electrical, optical and tribological properties. Those the properties of DLN could be varied over a wide range by changing deposition parameters, precursor and even post deposition treatment also. The range of properties are : Resistivity 10-4 to 1014 Ωcm, hardness 10–22 GPa, coefficient of friction 0.03-0.2, wear factor 0.2-0.4 10-7mm3/Nm, transmission Vis-far IR, modulus of elasticity 150-200 GPa, residual stress 200-300 Mpa, Dielectric constant 3-9 and maximum operating temperature 6000C in oxygen environment and 12000C in O2 free air. Generally, the PECVD method is used to synthesis the DLN film. The most common procedures used for investigation of structure and composition of DLN films are Raman spectroscopy, Fourier transformed infrared spectroscopy (FTIR), HRTEM, FESEM and X-ray photo electron spectroscopy (XPS). Interest in the coating technology has been expressed by nearly every industrial segment including automotive, aerospace, chemical processing, marine, energy, personal care, office equipment, electronics, biomedical and tool and die or in a single line from data to beer in all segment of life. In this review paper, characterization of Diamond-like Nanocomposites is discussed and subsequently different application areas are also elaborated.

Effect of Different Catalysts and Growth Temperature on the Photoluminescence Properties of Zinc Silicate Nanostructures Grown via VLS Method

2021 ◽  
Author(s):  
Ghfoor Muhammad ◽  
Imran Murtaza ◽  
Rehan Abid ◽  
Naeem Ahmad
Keyword(s):  
Energy Levels ◽  
Visible Region ◽  
Wide Bandgap ◽  
Visible Spectral Range ◽  
Zinc Silicate ◽  
Band Spectrum ◽  
Photoluminescence Properties ◽  
Display Devices ◽  
Crystal Growth Kinetics ◽  
Potential Applications

Abstract Herein, we explore the photoluminescence properties of zinc silicate (Zn2SiO4) nanostructures synthesized by vapor-liquid-solid (VLS) mode of growth using three different catalysts (Sn, Ag and Mn). Different catalysts significantly influence the growth rate which in turn has an impact on the structure and hence the photoluminescence of the prepared zinc silicate nanostructures. Zn2SiO4 has a wide bandgap of about 5.5 eV and in its pure form, it does not emit in visible region due to its inner shell electronic transitions between the 3d5 energy levels. However, the incorporation of different catalysts (Sn, Ag and Mn) at different growth temperatures into the Zn2SiO4 crystal growth kinetics provides wide visible spectral range of photoluminescence (PL) emissions. PL analysis shows broad multi-band spectrum in the visible region and distinct colours (red, yellow, green, blue, cyan and violet) are obtained depending on the crystalline structure of the prepared nanostructures. The allowed transitions due to the effect of different catalysts on zinc silicate lattice offer a huge cross-section of absorption that generates strong photoluminescence. The correlation between the structural and optical properties of the synthesized nanostructures is discussed in detail. The synthesized photoluminescent nanostructures have potential applications in solid-state lighting and display devices.

scholarly journals Tailoring Electro/Optical Properties of Transparent Boron-Doped Carbon Nanowalls Grown on Quartz

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 547 ◽  
Author(s):  
Mattia Pierpaoli ◽  
Mateusz Ficek ◽  
Michał Rycewicz ◽  
Mirosław Sawczak ◽  
Jakub Karczewski ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Structural Characteristics ◽  
Visible Region ◽  
Boron Doping ◽  
Light Transmittance ◽  
Boron Doped ◽  
Energy Conversion And Storage ◽  
Potential Applications ◽  
Carbon Nanowalls

Carbon nanowalls (CNWs) have attracted much attention for numerous applications in electrical devices because of their peculiar structural characteristics. However, it is possible to set synthesis parameters to vary the electrical and optical properties of such CNWs. In this paper, we demonstrate the direct growth of highly transparent boron-doped nanowalls (B-CNWs) on optical grade fused quartz. The effect of growth temperature and boron doping on the behavior of boron-doped carbon nanowalls grown on quartz was studied in particular. Temperature and boron inclusion doping level allow for direct tuning of CNW morphology. It is possible to operate with both parameters to obtain a transparent and conductive film; however, boron doping is a preferred factor to maintain the transparency in the visible region, while a higher growth temperature is more effective to improve conductance. Light transmittance and electrical conductivity are mainly influenced by growth temperature and then by boron doping. Tailoring B-CNWs has important implications for potential applications of such electrically conductive transparent electrodes designed for energy conversion and storage devices.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

2013 ◽  
Vol 15 (4) ◽  
Author(s):  
A. En Naciri ◽  
P. Miska ◽  
A.-S. Keita ◽  
Y. Battie ◽  
H. Rinnert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Silicon Oxide Layer
Sign in / Sign up

Export Citation Format

Share Document