scholarly journals ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

2011 ◽  
Vol 48 (1) ◽  
pp. 62-68 ◽  
Author(s):  
O. Shiman ◽  
V. Gerbreder ◽  
E. Sledevsky ◽  
A. Bulanov
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Conductivity ◽  
Crystalline State ◽  
Large Scale ◽  
Structural Model ◽  
Electrical Characteristics ◽  
Micro Scale ◽  
Scale Structures ◽  
Film Change

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURESResearch into the phase change transition (PCT) from amorphous to crystalline state in chalcogenide glass semiconductors is often more associated with large-scale samples. The authors present a micro-scale structural model of the Sb/Se thin films. They have also extended the investigations of photo- and thermo-stimulated inter-diffusion and PCT effects between two adjacent layers. The results show that the optical and electrical characteristics of such a film change simultaneously. It has been found that the electric conductivity of the films increases 3 times during a PCT process.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene

Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devices

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sebastian Lehmann ◽  
David Fuertes Marrón ◽  
José Manuel Merino Álvarez ◽  
Maximo Léon ◽  
Michael Tovar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid Solution ◽  
Structural Model ◽  
Tetragonal Distortion ◽  
Solid Solution Series ◽  
Surface Phase ◽  
Near Surface ◽  
Surface Phases ◽  
Gallium Content

AbstractChalcopyrite-based devices show highest conversion efficiencies among present thin film architectures with values of 20% at laboratory scale. This outstanding performance has been achieved for quaternary Cu(Inx,Ga1-x)Se2 (x˜0.7) compound material. However, a strong correlation between the performance and the gallium content or, in other words, low versus high bandgap materials has been recognized. One critical issue in this discussion is the formation of a copper-depleted near-surface phase with 1:3:5 and 1:5:8 stoichiometries. In earlier reports, surface phases with corresponding compositions have been found on CuInSe2, CuGaSe2 and Cu(Inx,Ga1-x)Se2 thin films. These near-surface phases show a positive influence on the performance of cells based on low bandgap Cu(Inx,Ga1-x)Se2 material due to n-type inversion and band gap widening compared to bulk properties. A tendency towards a neutral or even a negative impact of the near-surface phase on wide band gap material (high gallium content) has recently been reported [1]. Nevertheless, the structural models of copper-poor chalcopyrite-related compounds have been controversially discussed in literature but a stannite-type structural model is most suitable as will be presented. In any case, the relation of the structural properties between chalcopyrite and 1:3:5 phases is crucial for the performance of related devices.In this contribution we will report about the structural analysis of the Cu(Inx,Ga1-x)3Se5 solid solution series by means of anomalous x-ray scattering using synchrotron radiation, powder and single crystal neutron diffraction. Contributions of the isoelectronic species Cu+ and Ga3+ could be separated by these experiments. Bulk samples synthesized from the elements and heat treated at 650°C after the main reaction step - the latter in order to allow equilibrium structure formation - were investigated. Structural data like lattice parameters, tetragonal distortion and cation distribution were obtained for the complete Cu(Inx,Ga1-x)3Se5 solid solution series. The stannite-type structural model was assigned to all members of the investigated 1:3:5s which will be strengthened by simulations. We observed that the tetragonal distortion vanishes for compositions close to a gallium content as used for highest efficiency Cu(Inx,Ga1-x)Se2 devices. However, the tetragonal distortion depends critically on the cation distribution which is in turn controlled by the thermal history of the sample, as we have recently reported for pure CuGaSe2 [1]. This means that we can plot a direct correlation for the misfit between chalcopyrite and 1:3:5 phases depending on the gallium content and the thermal treatment of the considered thin films. These results will widen the understanding of the chalcopyrite-based thin film photovoltaic devices.[1] S. Lehmann et al., Phys. Stat. Sol. A (in press)

scholarly journals Conversion of WO3 thin films into self-crosslinked nanorods for large-scale ultraviolet detection

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14147-14153 ◽  
Author(s):  
Youngho Kim ◽  
Sang Hoon Lee ◽  
Seyoung Jeong ◽  
Bum Jun Kim ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Large Scale ◽  
High Density ◽  
Large Area ◽  
High Quality ◽  
Ultraviolet Detection ◽  
Heat Treated ◽  
Wo3 Thin Films

We heat-treated an amorphous large-area WO3 thin film to synthesize high-density, high-quality WO3 nanorods.

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1361-1367 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Surface ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Dielectric Thin Film ◽  
Si Substrates ◽  
Columnar Grain

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

SELF-ASSEMBLY FABRICATION OF GRAPHENE-BASED MATERIALS WITH OPTICAL–ELECTRONIC, TRANSIENT OPTICAL AND ELECTROCHEMICAL PROPERTIES

2012 ◽  
Vol 11 (06) ◽  
pp. 1240032 ◽  
Author(s):  
JIAYI ZHU ◽  
JUNHUI HE
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Self Assembly ◽  
Large Scale ◽  
Building Blocks ◽  
Precipitation Method ◽  
Hybrid Thin Film ◽  
Lbl Assembly ◽  
Metal Metal ◽  
Oppositely Charged

Directed self-assembly of nano or microsized materials as building blocks is a very exciting research topic to construct large-scale but still uniform 2D or 3D architectures. Graphene shows great potential as an advanced building block for fabricating varied graphene-based functional films or architectures together with other metal, metal oxide and semiconductor nanomaterials. In our work, we demonstrated an approach to fabrication of flexible, transparent conductive thin films via layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxides (RGOs). The graphene thin films showed remarkable optical–electronic properties. Inspired by this, we further fabricated transparent conductive hybrid thin film via LbL assembly of oppositely charged RGO nanosheets and Pt nanoparticles. The graphene– Pt hybrid thin film showed transient optical property as well as appropriate conductive and wetting properties. Moreover, we demonstrated graphene wrapped- MnO2 (GW- MnO2 ) nanocomposites by self-assembly of honeycomb MnO2 nanospheres and graphene sheets via an electrostatic co-precipitation method. The hybrid materials had a good electrochemical performance.

scholarly journals Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 83-88
Author(s):  
Huaping Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Large Scale ◽  
Solution Process ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Schottky Type ◽  
P Type ◽  
Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

Synthesis of Cu(In,Ga)(S,Se)2 thin films using an aqueous spray-pyrolysis approach, and their solar cell efficiency of 10.5%

2015 ◽  
Vol 3 (8) ◽  
pp. 4147-4154 ◽  
Author(s):  
Md. Anower Hossain ◽  
Zhang Tianliang ◽  
Lee Kian Keat ◽  
Li Xianglin ◽  
Rajiv R. Prabhakar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Large Scale ◽  
Power Conversion ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

An aqueous spray-pyrolysis approach for synthesizing Cu(In,Ga)(S,Se)2 thin film, which leads to 10.54% power conversion efficiency in solar cell, and shows ease of fabrication of films in large-scale at a much cheaper cost.

scholarly journals Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

2017 ◽  
Vol 2017 ◽  
pp. 1-13 ◽  
Author(s):  
Obi Kingsley Echendu ◽  
Francis Birhanu Dejene ◽  
Imyhamy Mudiy Dharmadasa ◽  
Francis Chukwuemeka Eze
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Dislocation Density ◽  
Large Scale ◽  
Photoelectrochemical Cell ◽  
Electrochemical Technique ◽  
Solar Cell Application ◽  
X Ray ◽  
Cds Thin Films

Electrochemical deposition and characterization of nanocrystallite-CdS thin films for thin film solar cell application are reported. The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. X-ray diffraction study reveals that the as-deposited films contain mixed phases of hexagonal and cubic CdS crystallites with large amounts of internal strain and dislocation density. Postdeposition annealing results in phase transformation which leaves the films with only the hexagonal crystal phase and reduced strain and dislocation density while increasing the crystallite sizes from 21.0–42.0 nm to 31.2–63.0 nm. Photoelectrochemical cell study shows that all the CdS films have n-type electrical conductivity. Optical characterization reveals that all samples show similar transmittance and absorbance responses with the transmittance slightly increasing towards higher growth voltages. All the annealed films show energy bandgap of 2.42 eV. Scanning electron microscopy and energy dispersive X-ray analyses show that grains on the surface of the films tend to get cemented together after annealing with prior CdCl2 treatment while all the films are S-rich.

scholarly journals Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1295
Author(s):  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Seong-Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Layer Thickness ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Indium Gallium

Herein, we investigated the effects of active layer thickness (tS) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with tS values of 7 nm, 15 nm, 25 nm, 35 nm, and 50 nm, were prepared for this analysis. The drain current was only slightly modulated by the gate-to-source voltage, in the case of the IGTO TFT with tS = 50 nm. Under positive bias stress (PBS), the electrical stability of the IGTO TFTs with a tS less than 35 nm improved as the tS increased. However, the negative bias illumination stress (NBIS) stability of these IGTO TFTs deteriorated as the tS increased. To explain these phenomena, we compared the O1s spectra of IGTO thin films with different tS values, acquired using X-ray photoelectron spectroscopy. The characterization results revealed that the better PBS stability, and the low NBIS stability, of the IGTO TFTs with thicker active layers were mainly due to a decrease in the number of hydroxyl groups and an increase in the number of oxygen vacancies in the IGTO thin films with an increase in tS, respectively. Among the IGTO TFTs with different tS, the IGTO TFT with a 15-nm thick active layer exhibited the best electrical characteristics with a field-effect mobility (µFE) of 26.5 cm2/V·s, a subthreshold swing (SS) of 0.16 V/dec, and a threshold voltage (VTH) of 0.3 V. Moreover, the device exhibited robust stability under PBS (ΔVTH = 0.9 V) and NBIS (ΔVTH = −1.87 V).

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