Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devices

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sebastian Lehmann ◽  
David Fuertes Marrón ◽  
José Manuel Merino Álvarez ◽  
Maximo Léon ◽  
Michael Tovar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid Solution ◽  
Structural Model ◽  
Tetragonal Distortion ◽  
Solid Solution Series ◽  
Surface Phase ◽  
Near Surface ◽  
Surface Phases ◽  
Gallium Content

AbstractChalcopyrite-based devices show highest conversion efficiencies among present thin film architectures with values of 20% at laboratory scale. This outstanding performance has been achieved for quaternary Cu(Inx,Ga1-x)Se2 (x˜0.7) compound material. However, a strong correlation between the performance and the gallium content or, in other words, low versus high bandgap materials has been recognized. One critical issue in this discussion is the formation of a copper-depleted near-surface phase with 1:3:5 and 1:5:8 stoichiometries. In earlier reports, surface phases with corresponding compositions have been found on CuInSe2, CuGaSe2 and Cu(Inx,Ga1-x)Se2 thin films. These near-surface phases show a positive influence on the performance of cells based on low bandgap Cu(Inx,Ga1-x)Se2 material due to n-type inversion and band gap widening compared to bulk properties. A tendency towards a neutral or even a negative impact of the near-surface phase on wide band gap material (high gallium content) has recently been reported [1]. Nevertheless, the structural models of copper-poor chalcopyrite-related compounds have been controversially discussed in literature but a stannite-type structural model is most suitable as will be presented. In any case, the relation of the structural properties between chalcopyrite and 1:3:5 phases is crucial for the performance of related devices.In this contribution we will report about the structural analysis of the Cu(Inx,Ga1-x)3Se5 solid solution series by means of anomalous x-ray scattering using synchrotron radiation, powder and single crystal neutron diffraction. Contributions of the isoelectronic species Cu+ and Ga3+ could be separated by these experiments. Bulk samples synthesized from the elements and heat treated at 650°C after the main reaction step - the latter in order to allow equilibrium structure formation - were investigated. Structural data like lattice parameters, tetragonal distortion and cation distribution were obtained for the complete Cu(Inx,Ga1-x)3Se5 solid solution series. The stannite-type structural model was assigned to all members of the investigated 1:3:5s which will be strengthened by simulations. We observed that the tetragonal distortion vanishes for compositions close to a gallium content as used for highest efficiency Cu(Inx,Ga1-x)Se2 devices. However, the tetragonal distortion depends critically on the cation distribution which is in turn controlled by the thermal history of the sample, as we have recently reported for pure CuGaSe2 [1]. This means that we can plot a direct correlation for the misfit between chalcopyrite and 1:3:5 phases depending on the gallium content and the thermal treatment of the considered thin films. These results will widen the understanding of the chalcopyrite-based thin film photovoltaic devices.[1] S. Lehmann et al., Phys. Stat. Sol. A (in press)

Zinc Self-Diffusion in Isotopic Heterostructured Zinc Oxide Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 193-196 ◽  
Author(s):  
Kenji Matsumoto ◽  
Yutaka Adachi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
Tsubasa Nakagawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Outer Region ◽  
Pulsed Laser ◽  
Diffusion Annealing ◽  
Oxide Thin Films ◽  
Near Surface ◽  
Zinc Isotopes

Zinc isotopic heterostructured zinc oxide thin films of 64ZnO/68ZnO/64ZnO were synthesized using pulsed laser deposition. The pulsed laser was first irradiated onto a polycrystalline target of 64ZnO to deposit the 64ZnO layer, then onto the 68ZnO target to prepare the 68ZnO layer and finally, the 64ZnO target was used again. The 64ZnO/68ZnO/64ZnO layered thin film was thus obtained. The thin films were annealed at various diffusion annealing temperatures. Diffusion profiles of the zinc isotopes due to the annealing were evaluated using secondary ion mass spectrometry (SIMS). The diffusion coefficients were slightly higher near the interface between the thin film and the substrate (the inner region) compared to the near surface (the outer region).

scholarly journals Thin film stress and microstructure analysis by energy-dispersive diffraction

2014 ◽  
Vol 70 (a1) ◽  
pp. C724-C724
Author(s):  
Christoph Genzel
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Film Growth ◽  
High Energy ◽  
Energy Dispersive ◽  
Film Stress ◽  
Ex Situ ◽  
Near Surface

The most important advantage of energy dispersive (ED) diffraction compared with angle dispersive methods is that the former provides complete diffraction patterns in fixed but arbitrarily selectable scattering directions. Furthermore, in experiments that are carried out in reflection geometry, the different photon energies E(hkl) of the diffraction lines in an ED diffraction pattern can be taken as an additional parameter to analyze depth gradients of structural properties in the materials near surface region. For data evaluation advantageous use can be made of whole pattern methods such as the Rietveld method, which allows for line profile analysis to study size and strain broadening [1] or for the refinement of models that describe the residual stress depth distribution [2]. Concerning polycrystalline thin films, the features of ED diffraction mentioned above can be applied to study residual stresses, texture and the microstructure either in ex-situ experiments or in-situ to monitor, for example, the chemical reaction pathway during film growth [3]. The main objective of this talk is to demonstrate that (contrary to a widespread opinion) high energy synchrotron radiation and thin film analysis may fit together. The corresponding experiments were performed on the materials science beamline EDDI at BESSY II which is one of the very few instruments worldwide that is especially dedicated to ED diffraction. On the basis of selected examples it will be shown that specially tailored experimental setups allow for residual stress depth profiling even in thin films and multilayer coatings as well as for fast in situ studies of film stress and microstructure evolution during film growth.

Processing and Characterisation of Single‐Phase Superconducting Thin Films in the Bi‐Sr‐Ca‐Cu‐O System from Chemical Precursors

1989 ◽  
Vol 169 ◽  
Author(s):  
S. J. Golden ◽  
T. E. Bloomer ◽  
F. F. Lange ◽  
A. M. Segadaes ◽  
K. J. Vaidya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid Solution ◽  
Single Phase ◽  
Bulk Material ◽  
Superconducting Thin Films ◽  
Film Properties ◽  
Ethyl Hexanoate ◽  
Film Study ◽  
Solid Solution Range

AbstractThin films in the Bi‐Sr‐Ca‐Cu‐O system have been synthesized from liquid ethyl hexanoate precursors by spin pyrolysis. An extensive solid solution range was determined for the two Cu‐layer phase through the study of c‐axis oriented, single‐phase thin films fabricated on single‐crystal MgO (100). Extensive cation non‐stoichiometry was observed in all cases. The variation of important thin film properties with composition within the solid solution range have been described.Utilising the results from the thin film study together with data relating to liquid formation in mixtures of bulk material a working model describing the formation of the two‐layer phase has been formulated. The two‐layer phase is formed as the result of precipitation from a fugitive liquid at temperatures exceeding 730 *C.

Synthesis, characterization and computational study of an ilmenite-structured Ni3Mn3Ti6O18 thin film photoanode for solar water splitting

2019 ◽  
Vol 43 (28) ◽  
pp. 11113-11124 ◽  
Author(s):  
Khadija Munawar ◽  
Fouzia Perveen ◽  
Muhammad Mehmood Shahid ◽  
Wan Jeffrey Basirun ◽  
Misni Bin Misran ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid Solution ◽  
Water Splitting ◽  
Glass Substrate ◽  
Computational Study ◽  
Dft Studies ◽  
Coated Glass Substrate ◽  
Coated Glass ◽  
Solar Water Splitting

Thin films of a Ni3Mn3Ti6O18 solid solution photoanode have been deposited on an FTO coated glass substrate and experimental results are supported by DFT studies.

scholarly journals Atomically resolved surface phases of La0.8Sr0.2MnO3(110) thin films

2020 ◽  
Vol 8 (43) ◽  
pp. 22947-22961
Author(s):  
Giada Franceschi ◽  
Michael Schmid ◽  
Ulrike Diebold ◽  
Michele Riva
Keyword(s):  
Thin Films ◽  
Atomic Scale ◽  
Lanthanum Strontium Manganite ◽  
Near Surface ◽  
Lanthanum Strontium ◽  
Surface Phases ◽  
First Time

The atomic-scale details of several surface phases of lanthanum–strontium manganite (La1−xSrxMnO3−δ, LSMO) with different near-surface cation stoichiometry are unveiled and systematically investigated for the first time.

scholarly journals ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

2011 ◽  
Vol 48 (1) ◽  
pp. 62-68 ◽  
Author(s):  
O. Shiman ◽  
V. Gerbreder ◽  
E. Sledevsky ◽  
A. Bulanov
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Conductivity ◽  
Crystalline State ◽  
Large Scale ◽  
Structural Model ◽  
Electrical Characteristics ◽  
Micro Scale ◽  
Scale Structures ◽  
Film Change

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURESResearch into the phase change transition (PCT) from amorphous to crystalline state in chalcogenide glass semiconductors is often more associated with large-scale samples. The authors present a micro-scale structural model of the Sb/Se thin films. They have also extended the investigations of photo- and thermo-stimulated inter-diffusion and PCT effects between two adjacent layers. The results show that the optical and electrical characteristics of such a film change simultaneously. It has been found that the electric conductivity of the films increases 3 times during a PCT process.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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