Characteristics of Ag Doped ZnO Thin Films Prepared by Sputtering Method

This paper presents results of preparation of Ag doped ZnO bulk sample by solid state reaction and Ag doped ZnO thin films by sputtering method. Effect of doping concentration (1, 2 and 4%) on the properties of the thin films was investigated. Various methods were utilized to investigate characteristics of the samples: X-ray diffraction, Raman scattering spectroscopy, photoluminescence, energy dispersive X-Ray spectroscopy, scanning electron microscopy, atomic force microscope, absorption spectroscopy and Hall measurement. The results show that Ag diffused into ZnO crystal lattice after heat treatment at 1200oC. As-prepared thin film samples exhibit low resistivity in the order of 10-3Ω.cm. The film doped with 2% Ag shows the lowest resistivity of 1.8´10-3Ω.cm which is potential for making transparent electrodes in optoelectronics.

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Growth of Zn1−x CdxO nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

Materials Science-Poland ◽

10.2478/s13536-014-0248-3 ◽

2014 ◽

Vol 32 (4) ◽

pp. 688-695 ◽

Cited By ~ 8

Author(s):

Munirah Munirah ◽

Ziaul Khan ◽

Mohd. Khan ◽

Anver Aziz

Keyword(s):

Thin Films ◽

Sol Gel ◽

Visible Region ◽

Zno Thin Films ◽

Band Edge Emission ◽

X Ray Diffraction ◽

X Ray ◽

Cd Doping ◽

Vis Spectroscopy ◽

Doped Zno

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.

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Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.644.109 ◽

2010 ◽

Vol 644 ◽

pp. 109-112

Author(s):

N. Muñoz Aguirre ◽

J. Eduardo Rivera-López ◽

L. Martínez Pérez ◽

Pedro A. Tamayo Meza

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Spray Pyrolysis Technique ◽

Water Mist ◽

Zno Thin Films ◽

Electrical Characteristics ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

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Ni-Doped ZnO Thin Films: Deposition, Characterization and Photocatalytic Applications

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18981 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1560-1569

Author(s):

K. Moorthy ◽

S. S. R. Inbanathan ◽

C. Gopinathan ◽

N. P. Lalla ◽

Abdulaziz Ali Alghamdi ◽

...

Keyword(s):

Thin Films ◽

Uv Light ◽

Characteristic Root ◽

Film Surface ◽

Hexagonal Wurtzite Structure ◽

Zno Thin Films ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Doped Zno

Root like structured Ni-doped zinc oxide [Zn(1-x)NixO (x = 0.09)] thin films were deposited on a non-conducting glass substrate by indigenously developed spray pyrolysis system at optimized substrate hotness of 573±5 K. Thus obtained Ni-doped ZnO thin films were characterized by UV-visible spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), Atomic Force Microscopy (AFM). XRD result revealed that Ni-doped ZnO has a polycrystalline nature with a hexagonal wurtzite structure. For pure ZnO and Ni-doped ZnO thin films, the particle sizes were 60.9 and 53.3 nm while lattice strain values were 1.56×10−3 and 1.14×10−3, respectively. The film surface showed characteristic root-like structure as observed by the SEM. It was observed that the Ni-doped ZnO thin films were grown in high density along with more extent of branching as compared to pure ZnO thin films but retained the root-like morphologies, however, the branches were more-thinner and of shorter lengths. AFM analysis showed that the surface grains of the Ni-doped samples are homogeneous with less RMS roughness values compared with the undoped ZnO samples. The photocatalytic activity of the prepared thin films was evaluated by the degradation of methyl orange (MO) dye under UV light irradiation. Pure ZnO and Ni-doped ZnO thin films took 150 min and 100 min to degrade about 60% MO dye, respectively.

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Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.485.144 ◽

2012 ◽

Vol 485 ◽

pp. 144-148

Author(s):

Jian Lin Chen ◽

Yan Jie Ren ◽

Jian Chen ◽

Jian Jun He ◽

Ding Chen

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Sol Gel ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

High Doping Concentration ◽

Doped Zno ◽

Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

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Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.364.119 ◽

2011 ◽

Vol 364 ◽

pp. 119-123 ◽

Cited By ~ 10

Author(s):

Nor Diyana Md Sin ◽

M.Z. Musa ◽

Mohamad Rusop

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Structural Properties ◽

Zno Thin Films ◽

X Ray Diffraction ◽

Absorption Properties ◽

X Ray ◽

Atomic Force ◽

Current Voltage ◽

Pure Argon Atmosphere

The effect of radio frequency (R.F) power to the properties of zinc oxide (ZnO) thin films deposited by magnetron sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation R.F power at 100 watt ~ 400 watt on the ZnO thin films has been investigated. The thin films were examined using current-voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a R.F magnetron sputtering using ZnO target. I-V measurement indicates that at 300 watt R.F power show the highest conductivity. All films have showed high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). Highly oriented ZnO thin films [002] direction was obtained by using Rigaku Ultima IV. The root means square (rms) roughness for ZnO thin film were about (<2nm) was measured using AFM (Park System XE-100). Keywords-ZnO thin films, R.F power, electrical properties, optical properties, structural properties

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Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

Journal of Molecular and Engineering Materials ◽

10.1142/s2251237317500046 ◽

2017 ◽

Vol 05 (01) ◽

pp. 1750004

Author(s):

R. Vettumperumal ◽

S. Kalyanaraman ◽

R. Thangavel

Keyword(s):

Thin Films ◽

Sol Gel ◽

Zno Thin Films ◽

Zno Films ◽

X Ray Diffraction ◽

Axis Orientation ◽

Gel Method ◽

X Ray ◽

Sol Gel Method ◽

Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

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ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

International Journal of Modern Physics B ◽

10.1142/s0217979210057602 ◽

2010 ◽

Vol 24 (31) ◽

pp. 6079-6090 ◽

Cited By ~ 2

Author(s):

I. I. RUSU ◽

M. SMIRNOV ◽

G. G. RUSU ◽

A. P. RAMBU ◽

G. I. RUSU

Keyword(s):

Thin Films ◽

Electronic Transport ◽

Hexagonal Structure ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Glass Substrates ◽

Atomic Force ◽

Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

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Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.322 ◽

2008 ◽

Vol 368-372 ◽

pp. 322-325

Author(s):

G.X. Liu ◽

F.K. Shan ◽

Byoung Chul Shin ◽

Won Jae Lee

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray ◽

Atomic Force ◽

Different Temperatures ◽

Doped Zno ◽

Co Doped

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.

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Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.339 ◽

2007 ◽

Vol 124-126 ◽

pp. 339-342

Author(s):

Gun Hee Kim ◽

Hong Seong Kang ◽

Dong Lim Kim ◽

Hyun Woo Chang ◽

Byung Du Ahn ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Deposition Conditions

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

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