Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 C

2005 ◽  
Author(s):  
Janis Niedra ◽  
Gene Schwarze
Keyword(s):  
Silicon Carbide ◽  
Turn On ◽  
Switching Characteristics

Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1159-1162 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Eric Lieser ◽  
Ranbir Singh
Keyword(s):  
Silicon Carbide ◽  
Smart Grid ◽  
Voltage Drop ◽  
Positive Temperature ◽  
Turn On ◽  
Current Saturation ◽  
Grid Applications ◽  
Output Characteristics ◽  
Switching Characteristics ◽  
Safe Operating

Silicon Carbide Anode Switched Thyristors (ASTs) overcome major limitations of conventional Si and SiC IGBT and GTO Thyristor solutions by providing robust, latch-up free turn-off at high currents, current saturation in the output characteristics, and a wide safe operating area (SOA) through series current controlled device turn-off. In this work, detailed static and switching characteristics of 6.5 kV-class SiC ASTs are reported, which include a low on-state voltage drop of 4 V at 100 A/cm2, slight positive temperature co-efficient of Von, current saturation at > 100 A Cathode currents and fast turn-on and turn-off times of 500 ns while switching 1300 V and 20 A.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

4kV Silicon Carbide MOSFETs

2011 ◽  
Vol 679-680 ◽  
pp. 637-640 ◽  
Author(s):  
Zachary Stum ◽  
A.V. Bolotnikov ◽  
Peter A. Losee ◽  
Kevin Matocha ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Temperature Dependence ◽  
Device Design ◽  
Switching Performance ◽  
Turn On ◽  
Blocking Voltage ◽  
Vertical Mosfets

Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175°C), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.

Investigation Of Microplasma Breakdown In 4H Silicon Carbide

1998 ◽  
Vol 512 ◽  
Author(s):  
Uwe Zimmermann ◽  
Anders Hallén ◽  
Andrey O. Konstantinov ◽  
Bo Breitholtz
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Measurement Techniques ◽  
Electrical Measurement ◽  
Parallel Plane ◽  
Turn On ◽  
Forward Current ◽  
Current Densities ◽  
Microplasma Breakdown

ABSTRACTReverse bias breakdown behaviour of high quality 4H silicon carbide p-n diodes was investigated, using optical and electrical measurement techniques. Most of the sample diodes suffered from early breakdown phenomena in the form of microplasmas at about 80% of the calculated parallel plane breakdown voltage for the diodes, as evident from measured I-V curves. A group of these microplasmas could be correlated to micropipes, identified by optical microscopy, while a large number of microplasmas were caused by other defects and inhomogenities in the space charge region under reverse bias. The same spots that revealed early breakdown phenomena under reverse bias also showed a different electroluminescence (EL) behaviour under low forward current densities compared to those areas with a homogeneous breakdown behaviour. However, even diodes containing one or more micropipes in the region of the junction showed good rectifying behaviour up to two third of the parallel plane breakdown voltage, where the turn-on of a microplasma was observed.

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

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