CVD Diamond as Dielectric Material for Capacitor Applications

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Heidger ◽  
S. Fries-Carr ◽  
J. Weimer ◽  
B. Jordan ◽  
R. Wu
Keyword(s):  
Dielectric Constant ◽  
Loss Tangent ◽  
Microwave Plasma ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Temperature Stability ◽  
Cvd Diamond ◽  
Dielectric Constants ◽  
Plasma Chemical Vapor Deposition ◽  
Deposition Parameters

ABSTRACTDiamond films synthesized using Microwave Plasma Chemical Vapor Deposition (MWCVD) were evaluated for use as dielectric material for high power and high temperature capacitors. The effect that the deposition parameters and annealing have on the frequency and temperature stability of the electronic properties was investigated. Dielectric constants ranging between 8.0 and 4.2 and resistivities between 1× 108 ohm-cm and 5×1014 ohm-cm were obtained. Diamond produced using less than 6.6% methane had very stable dielectric constants over the frequency range of 100 Hz to IMHz, and the loss tangent was less than 0.01. Adding oxygen to the precursor gas increased the dielectric constant and lowered the loss tangent of CVD diamond, but the resistivity was also lowered. As the temperature increased to 300°C, the dielectric constant and loss tangent increased. However, when diamond was annealed to 700°C, there was less than a 5% change in the dielectric constant from 23°C to 300°C.

scholarly journals Isotope Effect in Thermal Conductivity of Polycrystalline CVD-Diamond: Experiment and Theory

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 322
Author(s):  
Alexander V. Inyushkin ◽  
Alexander N. Taldenkov ◽  
Victor G. Ralchenko ◽  
Andrey P. Bolshakov ◽  
Alexander V. Khomich
Keyword(s):  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Isotopic Composition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Plasma Chemical Vapor Deposition

We measured the thermal conductivity κ(T) of polycrystalline diamond with natural (natC) and isotopically enriched (12C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality polycrystalline diamond wafers were produced by microwave plasma chemical vapor deposition in CH4-H2 mixtures. The thermal conductivity of 12C diamond along the wafer, as precisely determined using a steady-state longitudinal heat flow method, exceeds much that of the natC sample at T>60 K. The enriched sample demonstrates the value of κ(298K)=25.1±0.5 W cm−1 K−1 that is higher than the ever reported conductivity of natural and synthetic single crystalline diamonds with natural isotopic composition. A phenomenological theoretical model based on the full version of Callaway theory of thermal conductivity is developed which provides a good approximation of the experimental data. The role of different resistive scattering processes, including due to minor isotope 13C atoms, defects, and grain boundaries, is estimated from the data analysis. The model predicts about a 37% increase of thermal conductivity for impurity and dislocation free polycrystalline chemical vapor deposition (CVD)-diamond with the 12C-enriched isotopic composition at room temperature.

Morphology of the Diamond Thin Films Grown by Microwave Plasma Chemical Vapor Deposition with Different Aftertreatments

2010 ◽  
Vol 152-153 ◽  
pp. 915-919
Author(s):  
Yu Shiang Wu ◽  
Wen Chi Lai ◽  
Yuan Haun Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Chamber Pressure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Deposition Parameters

Diamond films were deposited on (111) silicon wafers by microwave plasma chemical vapor deposition (MPCVD). The deposition parameters included a system power of 1200 W, chamber pressure of 110 torr, H2 flowing rate of 300 sccm, and a CH4 flowing rate of 15 sccm. The diamond particles measured about 5-6 μm, and morphology analysis revealed a rectangular structure stacked regularly on diamond films after deposition. X-ray diffraction (XRD) analysis detected (220) square structures. Annealing at 600 °C improved the quality of diamond film, making the peak of the Raman spectra at 1350 cm-1 sharper and higher. The (220) and (311) orientation structures on the diamond films decreased after annealing broke the surface morphology. To conduct electric and optical experiments conveniently, the deposited samples were immersed in acid (HNA, HF：HNO3：CH3COOH = 3：25：10) to remove the silicon layers. The HNA acid did not corrode diamond films seriously, but slightly damaged the incomplete (220) and (311) structures.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

2021 ◽  
Vol 21 (8) ◽  
pp. 4412-4417
Author(s):  
Jonggeon Lee ◽  
Taemyung Kwak ◽  
Geunho Yoo ◽  
Seongwoo Kim ◽  
Okhyun Nam
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Defect Density ◽  
Chemical Vapor ◽  
Atomic Force Microscope Image ◽  
Selective Etching ◽  
Diamond Surface ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×108 to 2.02×108 cm−2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm−1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm−1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

Sign in / Sign up

Export Citation Format

Share Document