scholarly journals A 4-μW 0.8-V Rail-to-Rail Input/Output CMOS Fully Differential OpAmp

Author(s):  
M.R. Valero ◽  
S. Celma ◽  
N. Medrano

This paper presents an ultra low power rail-to-rail input/output operational amplifier (OpAmp) designed in a low cost 0.18 μm CMOS technology. In this OpAmp, rail-to-rail input operation is enabled by using complementary input pairs with gm control. To maximize the output swing a rail-to-rail output stage is employed. For low-voltage low-power operation, the operating transistors in the input and output stage are biased in the sub-threshold region. The simulated DC open loop gain is 51 dB, and the slew-rate is 0.04 V/μs with a 10 pF capacitive load connected to each of the amplifier outputs. For the same load, the simulated unity gain frequency is 131 kHz with a 64º phase margin. A common-mode feed-forward circuit (CMFF) increases CMRR, reducing drastically the variations in the output common mode voltage and keeping the DC gain almost constant. In fact, their relative error remains below 1.2 % for a (-20ºC, +120ºC) temperature span. In addition, the proposed OpAmp is very simple and consumes only 4 μW at 0.8 V supply.

2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.


Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.


2015 ◽  
Vol 24 (09) ◽  
pp. 1550134 ◽  
Author(s):  
Seied Zaniar Hoseini ◽  
Johar Abdekhoda ◽  
Kye-Shin Lee

This work describes an ultra low voltage, low power and self biased comparator with wide input common-mode range. The proposed comparator consists of a preamplifier followed by a regenerative back-to-back inverter latch, where two push pull NMOS and PMOS pairs are exploited to bias the preamplifier and adjust its output common mode voltage. This leads to a wide input common mode voltage range (from 0 V to 390 mV). Furthermore, the operation of proposed structure is relatively insensitive to process and temperature variations due to the push pull transistors, and low power consumption is achieved through sub-threshold region operation. The comparator circuit is designed using 65-nm CMOS technology with minimum supply voltage of 0.4 V. Simulation results show an average power consumption ranging from 141 nW to 188 nW for different input common mode voltage levels, where a simple power gating technique is employed to further reduce the power consumption. The Monte Carlo simulation shows an average offset of 450 μV with standard deviation of 3.3 mV. In addition, the comparator shows a kickback noise range of 0.3–2.4 mV (with input common mode range from 0 V to 390 mV) and input referred noise of 0.9 mV. The proposed comparator operates up to clock frequency of 1 MHz in most process corners and temperature range of 0–100°C which is suitable for most of the biomedical sensing applications.


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