scholarly journals The influence of CdCl2 layer and annealing process on the structural and electrical properties of CdTe films

2019 ◽  
Vol 11 (22) ◽  
pp. 8-13
Author(s):  
Mohammed A. Razooqi
Keyword(s):  
Room Temperature ◽  
Life Time ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Films ◽  
P Type ◽  
Carrier Life Time

A polycrystalline CdTefilms have been prepared by thermal evaporation technique on glass substrate at room temperature. The films thickness was about700±50 nm. Some of these films were annealed at 573 K for different duration times (60, 120 and 180 minutes), and other CdTe films followed by a layer of CdCl2 which has been deposited on them, and then the prepared CdTe films with CdCl2 layer have been annealed for the same conditions. The structures of CdTe films without and with CdCl2 layer have been investigated by X-ray diffraction. The as prepared and annealed films without and with CdCl2 layer were polycrystalline structure with preferred orientation at (111) plane. The better structural properties have been observed in presence of CdCl2 layer. The D.C conductivity for CdTe films with CdCl2 layershowed higher values. The electrical activation energy influenced with increasing duration times of annealing. Hall Effect measurement was indicated that all CdTe films are p-type. The carrier concentration, Hall mobility and the carrier life time wereaffected by increasing duration times of annealing.

scholarly journals Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films

2014 ◽  
Vol 11 (3) ◽  
pp. 1257-1260
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
P Type

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and from 0.096 to 0. 162 eV with increasing of annealing temperature from 343K to 363K, respectively. Hall measurements showed that all the films are p-type.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

scholarly journals Growth, Optical and Microhardness Studies of 2-Aminothiazole- 3, 5-Dinitrobenzoic Acid Complex

2019 ◽  
Vol 1 (1) ◽  
pp. 42-45
Author(s):  
Tamiloli Devendhiran ◽  
Keerthika Kumarasamy ◽  
Mei–Ching Lin
Keyword(s):  
Room Temperature ◽  
Grown Crystal ◽  
Optical Transmittance ◽  
Dielectric Measurements ◽  
Slow Evaporation ◽  
X Ray Diffraction ◽  
Acid Complex ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Evaporation Technique

Single crystals of 2-Aminothiazole 3,5-Dinitrobenzoic acid has been synthesized and good quality optical crystals were grown by slow evaporation technique at room temperature. The crystallinity nature of the grown crystal was confirmed from X-ray diffraction technique. An optical transmittance study was also carried out by UV – Vis spectra. FTIR spectra confirm the presence of functional groups in the grown crystal. The dielectric measurements were carried out in the range of 50Hz to 2MHz. The dielectric constant was seen to increase exponentially at lower frequencies. The microhardness studies were carried out using Vickers hardness indenter. Photoluminescence study shows that maximum emission occurs at 435nm.

Preparation and Characterization of Aluminium-Doped SnS Thin Films

2011 ◽  
Vol 418-420 ◽  
pp. 712-716 ◽  
Author(s):  
Shuai Zhang ◽  
Shu Ying Cheng ◽  
Hong Jie Jia ◽  
Hai Fang Zhou
Keyword(s):  
Doping Concentration ◽  
Near Infrared ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Al Doping ◽  
Glass Substrates ◽  
Direct Band ◽  
Evaporation Technique ◽  
Sns Thin Films ◽  
P Type

Metallic-doping chalcogenide compounds have attracted significant interest in application of photovoltaic devices recently. In this article, Al-doped SnS films with a thickness of about 500 nm have been deposited on glass substrates by thermal evaporation technique. Al-doping concentration (from 0 at. % to 15 at.%) in the SnS films can be controlled accurately by varying Al layer thickness. The effects of Al–doping on the physical properties of the films have been investigated by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-near infrared spectroscopy measurements and Hall effect measurement system. All the films are orthorhombic SnS with preferred (111) crystallites orientation, and they are of p-type conductivity. With the increasing of Al-doping concentration, the evaluated direct band gap Edir of the SnS: Al films decreases from 1.50eV to 1.29eV and the conductivities of the films increase. Therefore, the optical and semiconducting properties of the SnS films have been improved by Al-doping.

Structural Properties of Zn-PbI2 Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 164-168 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Y. Al-Douri
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Chemical Technique ◽  
Evaporation Technique ◽  
Scanning Electron

The structural properties of Zn-doped and undoped lead iodide ( PbI2 ) nanostructures have been investigated. Zn-doped and undoped of ( PbI2 ) have been grown by chemical technique. Different doped and undoped PbI2 when prepared successfully by thermal evaporation technique an glass substrate at room temperature. Characterization and analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) have indicated to the crystalline character. The particle size of Zn-PbI2 is larger than undoped PbI2.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

2014 ◽  
Vol 1061-1062 ◽  
pp. 209-214 ◽  
Author(s):  
Zi Yue Yang ◽  
Li Dong Wang ◽  
Rui Xuan Song ◽  
Dong Xing Zhang ◽  
Wei Dong Fei
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Hall Effect Measurement ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Higher Carrier Mobility ◽  
Substrate Temperatures

Cu (In,Ga)Se2(CIGS) thin films were prepared by direct magnetron sputtering CIGS quaternary target at the substrate temperature varying from room temperature (RT) to 300 °C. The effects of substrate temperature on the structural and electrical properties of CIGS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Hall effect measurement. The CIGS thin films with a chalcopyrite structure were obtained between 100 and 300 °C and the crystallinity of films were enhanced with the increase of the substrate temperature from 100 to 300 °C. The film compositions were consisted with the target when the substrate temperatures were between RT and 200 °C, however, it deviated from the stoichiometry of the target when the substrate temperature was 300 °C. The CIGS films deposited at 200 °C had the higher carrier mobility of 3.522 cm2/Vs.

scholarly journals Isochronal Studies of the Structural and Electrical Properties of CdTe Films

2011 ◽  
Vol 8 (1) ◽  
pp. 134-140
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
P Type

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

Effects of Refraction and Reflection on Analysis of Thin Films by the Grazing-Incidence X-ray Diffraction Method

1989 ◽  
Vol 33 ◽  
pp. 109-120 ◽  
Author(s):  
Toru Takayama ◽  
Yoshiro Matsumoto
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diffraction Method ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
X Ray ◽  
Evaporation Technique ◽  
Diffraction Peaks ◽  
Angular Shift

AbstractThe grazing-incidence X-ray diffraction (GIXD) method was employed to analyze two-layer thin films, which were the samples of Å lOO Å Au/500Å Cu/Si02(substrate) and 250Å Cu/500Å Au/SiO2(substrate), which were prepared by the evaporation technique under the condition that the SiO2substrate was at room temperature. Diffraction profiles were obtained at various glancing angles ( α ) and the data were analyzed as a function of α. The results were as follows : 1) Diffraction peaks were shifted to larger diffraction angles, because of the refraction of the incident X-ray beam. The angular shift has been approximated by the equation, α - α2- αc2)1/2, where αcis the total ref reflection critical angle of the material. 2) As a result of the correction of angular shift, the stress of the evaporated films was estimated to be null. 3) The broadening of the Cu diffraction peak and the enhancement of the Cu diffraction intensity occurred at angles near αcof Cu, due to the reflection of the X-ray beam at the Cu/Au interface.

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