Structural Properties of Zn-PbI2 Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 164-168 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Y. Al-Douri
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Chemical Technique ◽  
Evaporation Technique ◽  
Scanning Electron

The structural properties of Zn-doped and undoped lead iodide ( PbI2 ) nanostructures have been investigated. Zn-doped and undoped of ( PbI2 ) have been grown by chemical technique. Different doped and undoped PbI2 when prepared successfully by thermal evaporation technique an glass substrate at room temperature. Characterization and analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) have indicated to the crystalline character. The particle size of Zn-PbI2 is larger than undoped PbI2.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Mn, Cu Doping and Optical Properties of Highly Crystalline Ultralong ZnS Nanowires

2007 ◽  
Vol 31 ◽  
pp. 114-116 ◽  
Author(s):  
N.D. Chien ◽  
H.V. Chung ◽  
P.T. Huy ◽  
Do Jin Kim ◽  
Maurizio Ferrari
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Cu Doping ◽  
Mn Doping ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Single Crystal Structures ◽  
Scanning Electron

Manganese (Mn) and copper (Cu) doping of ZnS nanowires was achieved by thermal evaporation of Mn, Cu doped ZnS nanopowders. Field emission scanning electron microscopy, and X-ray diffraction studies of the obtained ZnS nanowires demonstrate that the nanowires are single crystal structures and have diameters about 30-200 nm and lengths up to 1 millimeter. Room temperature photoluminescence (PL) measurements show a common PL peak around 520 nm for all ZnS nanowires samples, while impurity-related emission band are observed in doped ZnS nanowires. The dependence of the PL intensity on Mn doping concentration has also been investigated. It is shown that for high Mn doping concentration (10%) in the starting ZnS nanopowders, new emission bands (orange-red and red bands) are observed from the ZnS:Mn nanowires products. The origins of these new emission bands are discussed and brought up for further discussion.

Heteroe-Pitaxial Growth and Optical Properties of SnO2 Nanowires on ZnS Nanobelts

2012 ◽  
Vol 535-537 ◽  
pp. 481-485 ◽  
Author(s):  
Mang Jiang ◽  
Jun Hong Duan ◽  
Zhiang Liu
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Structural Information ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

The authors present the results of hetero-epitaxial growth of ultrafine SnO2nanowires on ZnS nanobelt substrates by a simple thermal evaporation method. ZnS/SnO2hetero-nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), transmission electron microscopy (TEM) to obtain the morphology and structural information. Comparing with ZnS nanobelts and SnO2nanowires respectively, the optical properties of ZnS/SnO2hetero-nanostructures are studied by Raman scattering and photoluminescence (PL) spectroscopy at room temperature.

Growth and Characterization of Ga2O3 Nanoribbons and Nanosheets

2006 ◽  
Vol 517 ◽  
pp. 53-56
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Microscopy ◽  
Gallium Oxide ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Zno Powders ◽  
Evaporation Technique

We have studied on the use of a GaN powders for growing gallium oxide (Ga2O3) nanoribbons and nanosheets by the thermal evaporation technique. We used x-ray diffraction, scanning electron microscopy, and transmission electron microscopy to characterize the samples. The results showed that the produced Ga2O3 nanomaterials had single crystalline monoclinic structures. The proportion of wider nanoribbons or nanosheets to nanoribbons increased by increasing the growth temperature and by employing the mixture of GaN and ZnO powders.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

Influence of Silicon Nitride on Properties of Corundum Based Castable

2013 ◽  
Vol 634-638 ◽  
pp. 2358-2361
Author(s):  
Jun Cong Wei ◽  
Li Rong Yang
Keyword(s):  
Electron Microscopy ◽  
Thermal Shock ◽  
Thermal Shock Resistance ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Cold Strength ◽  
X Ray ◽  
Refractory Castables ◽  
Shock Resistance ◽  
Scanning Electron

The effects of Si3N4 addition on the room temperature physical properties and thermal shock resistance properties of corundum based refractory castables were investigated using brown corundum, white corundum and alumina micropowder as the starting materials and pure calcium aluminate as a binder. The phase composition, microstructure, mechanical properties of corundum based castables were investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that as the increase in Si3N4 addition, the bulk density decreased and apparent porosity increased, the cold strength deduced. However, the residual strength rate increased. That is, the thermal shock resistance was improved. This is because even though the introduction of Si3N4 inhibited the sintering of material and deduced the compactness, microcracks were produced in the materials due to a difference in thermal expansion coefficient. So the thermal shock resistance of corundum based castable was improved.

N-type Ba0.2Co4Sb11.5Te0.5: Optimization of thermoelectric properties by different pressures

2019 ◽  
Vol 33 (03) ◽  
pp. 1950027 ◽  
Author(s):  
Jiaxiang Chen ◽  
Xiaopeng Jia ◽  
Yuewen Zhang ◽  
Haiqiang Liu ◽  
Baomin Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Absolute Value ◽  
X Ray ◽  
Coefficient Increase ◽  
Maximum Power Factor ◽  
Scanning Electron

The polycrystalline skutterudite [Formula: see text] were successfully synthesized from 1.5 GPa to 3.5 GPa by the high pressure and high temperature (HPHT) method. Negative Seebeck coefficient confirmed the n-type conductivity of all samples. The phase compositions of samples were investigated by X-ray diffraction (XRD) and the microstructures were observed by scanning electron microscopy (SEM). It was found that the grains appeared smaller and the grain boundaries became more abundant when pressures were higher. We measured the electrical properties from room temperature to 723 K. Both the electrical resistivity and absolute value of Seebeck coefficient increase with the increasing synthetic pressure. At 723 K, the maximum power factor of [Formula: see text] was obtained for the sample synthesized under 3 GPa. The maximum ZT value of 0.61 was reached by [Formula: see text] synthesized under 3 GPa and measured at 723 K.

scholarly journals the photoconductive properties of pbxs1-x films

2006 ◽  
Vol 3 (3) ◽  
pp. 534-539
Author(s):  
Baghdad Science Journal
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Quantitative Ratio ◽  
Optical Detector ◽  
Evaporation Technique

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise

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