scholarly journals Effects of RF Power on the Preparation of Cr-N Films Sputtered by RF Magnetron Sputtering System.

Shinku ◽  
1992 ◽  
Vol 35 (3) ◽  
pp. 252-255 ◽  
Author(s):  
Masaaki YOSHITAKE ◽  
Toshikazu NOSAKA ◽  
Akio OKAMOTO ◽  
Soichi OGAWA ◽  
Keiji TANAKA ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Sputtering System

Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets

2007 ◽  
Vol 544-545 ◽  
pp. 495-498 ◽  
Author(s):  
Akira Watazu ◽  
Katsuhiko Kimoto ◽  
Sonoda Tsutomu ◽  
Kinya Tanaka ◽  
Tomoji Sawada ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Titanium Implants ◽  
Rf Power ◽  
Dc Magnetron Sputtering ◽  
Dc Power ◽  
Sputtering Power ◽  
Titanium Target ◽  
Sputtering System

Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

Pressure Dependence of AZO Film Deposited by RF Powered Magnetron Sputtering System

2015 ◽  
Vol 1119 ◽  
pp. 29-33
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie Mani ◽  
Lam Mui Li ◽  
Umar Faruk Shuib ◽  
Saafie Salleh ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Working Pressure ◽  
High Transparency ◽  
Transparent Films ◽  
Argon Flow ◽  
Sputtering System

This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2Ω cm .

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System

GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

2015 ◽  
Vol 75 (7) ◽  
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie @ Mani ◽  
Lam Mui Li ◽  
Saafie Salleh ◽  
Afishah Alias ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Characteristic ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Rf Power ◽  
Argon Flow ◽  
Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %. 

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

1989 ◽  
Vol 164 ◽  
Author(s):  
Ratnabali Berjee ◽  
A. K. Bandyopadhyay ◽  
S. N. Sharma ◽  
A. K. Patabyal ◽  
A.K. Barua
Keyword(s):  
Magnetron Sputtering ◽  
Power Density ◽  
Rf Magnetron Sputtering ◽  
Silicon Films ◽  
Critical Parameters ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Film Properties

AbstractResults on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δ−cm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

Application of V2O5 in Thin Film Microbatteries Prepared by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Unit Area ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mems Technology ◽  
Surface Morphologies ◽  
Sputtering System

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.

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