Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets

Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

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GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

Jurnal Teknologi ◽

10.11113/jt.v75.5169 ◽

2015 ◽

Vol 75 (7) ◽

Author(s):

Farah Lyana Shain ◽

Azmizam Manie @ Mani ◽

Lam Mui Li ◽

Saafie Salleh ◽

Afishah Alias ◽

...

Keyword(s):

Magnetron Sputtering ◽

Film Thickness ◽

Glass Substrate ◽

Deposition Time ◽

Growth Characteristic ◽

Rf Magnetron Sputtering ◽

Optical Transmittance ◽

Rf Power ◽

Argon Flow ◽

Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %.

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Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.493-494.473 ◽

2011 ◽

Vol 493-494 ◽

pp. 473-476

Author(s):

E.O. Lopez ◽

F.F. Borghi ◽

Alexandre Mello ◽

J. Gomes ◽

Antonella M. Rossi

Keyword(s):

Magnetron Sputtering ◽

Deposition Time ◽

Grazing Incidence ◽

Rf Magnetron Sputtering ◽

Nanocrystalline Phase ◽

Rf Power ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

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Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.873.426 ◽

2013 ◽

Vol 873 ◽

pp. 426-430

Author(s):

Xian Wu Xiu ◽

Li Xu ◽

Cheng Qiang Zhang

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Xrd Analysis ◽

Hexagonal Structure ◽

Visible Range ◽

Rf Power ◽

X Ray Diffraction ◽

Glass Substrates ◽

Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

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Pressure Dependence of AZO Film Deposited by RF Powered Magnetron Sputtering System

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1119.29 ◽

2015 ◽

Vol 1119 ◽

pp. 29-33

Author(s):

Farah Lyana Shain ◽

Azmizam Manie Mani ◽

Lam Mui Li ◽

Umar Faruk Shuib ◽

Saafie Salleh ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Glass Substrate ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Working Pressure ◽

High Transparency ◽

Transparent Films ◽

Argon Flow ◽

Sputtering System

This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2Ω cm .

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Effects of RF Power on the Preparation of Cr-N Films Sputtered by RF Magnetron Sputtering System.

Shinku ◽

10.3131/jvsj.35.252 ◽

1992 ◽

Vol 35 (3) ◽

pp. 252-255 ◽

Cited By ~ 1

Author(s):

Masaaki YOSHITAKE ◽

Toshikazu NOSAKA ◽

Akio OKAMOTO ◽

Soichi OGAWA ◽

Keiji TANAKA ◽

...

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Sputtering System

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Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

Applied Physics A ◽

10.1007/s00339-021-04892-0 ◽

2021 ◽

Vol 127 (10) ◽

Author(s):

Somayeh Asgary ◽

Elnaz Vaghri ◽

Masoumeh Daemi ◽

Parisa Esmaili ◽

Amir H. Ramezani ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Sputtering ◽

Rf Power ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Sputtering Power ◽

Microstructural Surface ◽

Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

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Effects of Argon-Oxygen Ratio and Sputtering Power on Optical Properties of ZnO:Al Thin Films Fabricated by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.216.307 ◽

2011 ◽

Vol 216 ◽

pp. 307-311 ◽

Cited By ~ 1

Author(s):

Shu Jie ◽

Li Yang ◽

Dong Hua Fan

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Pressure ◽

Pressure Ratio ◽

Rf Sputtering ◽

Visible Spectrum ◽

Rf Magnetron Sputtering ◽

Electrical Performance ◽

Process Conditions ◽

Sputtering Power

Al-doped ZnO (ZAO) thin film with good performance was prepared by radio frequency (RF) magnetron sputtering technology under optimized process conditions. The crystallized characteristic and microstructure of the prepared samples were investigated by X-ray diffraction (XRD) pattern and atomic force microscopy (AFM). The optical transmittance spectra was employed to investigate the dependence of the optical performance of the ZAO film on the process conditions, such as argon-oxygen pressure ratios and sputtering powers, which revealed that the transmittance in the visible spectrum is first increased and then decreased as the argon/oxygen pressure ratios increased from 7/1 to 10/1. When the argon/oxygen pressure ratio is 9/1, the transmittance adds up to the maximum. In addition, as the RF sputtering power increases from 80W to 120W, the transmittance of the films is slightly declined with an average transmittance of above 80%; and with the increase of the sputtering power to 140W and 160W, the maximum transmittance of the film obviously decreases below 75%. Moreover, the electrical properties of ZAO thin films were measured by the four-probe tester. The resistivity of the film is less than 10-3 Ω • cm, demonstrating that it have a good electrical performance.

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Properties of ITO Films Deposited on Plastic Substrate by RF Superimposed DC Magnetron Sputtering Method

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.367 ◽

2007 ◽

Vol 124-126 ◽

pp. 367-370 ◽

Cited By ~ 6

Author(s):

Do Geun Kim ◽

Sung Hun Lee ◽

Mi Rang Park ◽

Yu Jeong Jeong ◽

Gun Hwan Lee ◽

...

Keyword(s):

Residual Stress ◽

Magnetron Sputtering ◽

Hall Effect ◽

Stress Measurement ◽

Hall Effect Measurement ◽

Plastic Substrate ◽

Rf Power ◽

Dc Magnetron Sputtering ◽

Dc Power ◽

Ito Films

Tin doped indium oxide (ITO) films were deposited on plastic films by RF superimposed DC magnetron sputtering method using an In2O3 – 10 wt.% SnO2 target without intentionally heating substrates. We have investigated the effects of an RF superimposed DC power system on the electrical, optical, and mechanical properties of the ITO films by using Four-Point Probe, Hall Effect Measurement, UV-Vis-NIR Spectrophotometer, XRD, and Residual Stress Measurement. With increasing the amount of RF power superimposed on DC power, the sputtering discharge voltages of DC power supply were decreased from –290 V to –100 V, i.e., plasma impedance decreased with an increase of the amount of RF power. The resistivity of the samples drastically decreases with increasing RF power, and shows the lowest value of 3.8×10-4 8·cm. Hall effect measurements explain that the increase of carrier mobility is strongly related with the enhancement of the resistivity of ITO films even though there is no difference on its concentration. The RF power superimposed on DC power also reduces the residual stress of the samples up to the stress level of ~ 200 MPa at optimum values of RF power.

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Calcium Phosphate Coating on Blast-Treated Titanium Implants by RF Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.631-632.211 ◽

2009 ◽

Vol 631-632 ◽

pp. 211-216 ◽

Cited By ~ 3

Author(s):

Kyosuke Ueda ◽

Takayuki Narushima ◽

Takashi Goto ◽

T. Katsube ◽

Hironobu Nakagawa ◽

...

Keyword(s):

Calcium Phosphate ◽

Magnetron Sputtering ◽

Bonding Strength ◽

Rf Magnetron Sputtering ◽

Titanium Implants ◽

Calcium Phosphate Coating ◽

Phosphate Coating ◽

Coating Films

Calcium phosphate coating films were fabricated on Ti-6Al-4V plates and screw-type implants with a blast-treated surface using radiofrequency (RF) magnetron sputtering and were evaluated in vitro and in vivo. Amorphous calcium phosphate (ACP) and oxyapatite (OAp) films obtained in this study could cover the blast-treated substrate very efficiently, maintaining the surface roughness. For the in vitro evaluations of the calcium phosphate coating films, bonding strength and alkaline phosphatase (ALP) activity were examined. The bonding strength of the coating films to a blast-treated substrate exceeded 60 MPa, independent of film phases except for the film after post-heat-treatment in silica ampoule. When compared with an uncoated substrate, the increase in the ALP activity of osteoblastic SaOS-2 cells on a calcium phosphate coated substrate was confirmed by a cell culture test. The removal torque of screw-type Ti-6Al-4V implants with a blast-treated surface from the femur of Japanese white rabbit increased with the duration of implantation and it was statistically improved by coating an ACP film 2 weeks after implantation. The in vitro and in vivo studies suggested that the application of the sputtered ACP film as a coating on titanium implants was effective in improving their biocompatibility with bones.

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