The Study and Methodology of Defects Isolation For Contacts of Non-Isolated Active Region on New Logic Designs

2005 ◽  
Author(s):  
C. H. Wang ◽  
C. M. Shen ◽  
C. J. Lin ◽  
Z. H. Lee ◽  
J. H. Chou
Keyword(s):  
Active Region ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Operating Voltage ◽  
Circuit Layout ◽  
Analysis Process ◽  
Atomic Force ◽  
Front End ◽  
Voltage Contrast

Abstract With the advancement in technology and lower operating voltage, new standards have evolved in circuit layout and design. Some of these new standards have increased the difficulties of the physical failure analysis process, especially on the front-end. The phenomenon described in this paper is the unusual voltage contrast (VC) and conductive atomic force microscope (C-AFM) curve on a non-isolated active region. The model and mechanism are demonstrated for front-end failure analysis. Based on this, the solution for analysis is investigated.

Characterization Complex Voltage Contrast Image Using Atomic Force Microscopy

2004 ◽  
Author(s):  
C.H. Chen ◽  
C.M. Shen ◽  
C.M. Huang ◽  
Y.F. Hsia
Keyword(s):  
Failure Analysis ◽  
Scanning Probe ◽  
Production Lines ◽  
Force Microscopy ◽  
Atomic Force ◽  
Front End ◽  
Probe Microscope ◽  
Voltage Contrast ◽  
Contrast Image ◽  
Electrical Data

Abstract The passive voltage contrast (PVC) in this experiment was widely used to detect open/short issues for most failure analyses. However, most of back-end particles were visible, but front-end particles were not. And sometimes only used PVC image, the failure mechanism was un-imaginable. As a result, we needed to collect some electrical data to explain complex PVC image, before physical failure analysis (PFA) was started. This paper shows how to use the scanning probe microscope (SPM) tool to make up PVC method and overcome the physical failure analysis challenge. From our experiment, the C-AFM could provide more information of the defect type and give faster feedback to production lines.

Failure Analysis of Laser Blown Metal Fuse Failures in Submicron Technology by C-AFM

2006 ◽  
Author(s):  
Liang-Feng Wen ◽  
Chien-Hui Chen ◽  
Allen Timothy Chang
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Laser Cutting ◽  
Spot Size ◽  
Repair Rate ◽  
Atomic Force ◽  
Measurement Laser

Abstract This paper presents a method of using a conductive atomic force microscope (C-AFM) to characterize a submicron metal fuse that has been blown open inadequately by laser. In order to obtain a proper I-V curve measured using the C-AFM without affecting the incompletely opened fuse, the paper proposes a method of preserving the fuse by coating its surface with spin-on glass. The paper explains how differences in laser cutting machines resulted in the high failure repair rate of customer product despite equivalent energy and spot size settings. Analysis of the fuse bank circuitry on wafers helped to find the critical physical differences between a fully blown and a poorly blown fuse. By overcoming difficulties in preserving the blown fuse failure sites for C-AFM measurement, laser settings could be easily optimized to ensure proper fuse opening.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

Coupling C-AFM with Nanoprobing Technique for Further Junction Leakage Analysis

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Chen Chuang ◽  
Chen-May Huang ◽  
Shi-Chen Lin ◽  
Jie-Fei Chang
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
Failure Mechanisms ◽  
Gate Leakage ◽  
Process Technology ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Or Gate

Abstract With the evolution of advanced process technology, failure analysis has become more and more difficult because more defects are of the non-visual type (very tiny or even invisible defects) from new failure mechanisms. In this article, a novel and effective methodology which couples the conductive atomic force microscope (C-AFM) with nano-probing technique is proposed to reveal some particular failure modes which were not observable and difficult to identify with traditional physical failure analysis techniques. The capability of coupling C-AFM with nano-probing technique is used to distinguish cases which suffer general junction leakage or gate leakage from those that form the fake junction leakage or gate leakage cases. C-AFM can detect the abnormal contacts quickly, and nano-probing could provide the precise electrical characteristic further. Then, combining these variant measuring results, the favorable tactics can be adopted to deal with different states.

The Failure Analysis of Specific Source-to-Drain Dislocation and Case Study

2008 ◽  
Author(s):  
C. H. Wang ◽  
S.W. Lai ◽  
C.Y. Wu ◽  
B.T. Chen ◽  
J.Y. Chiou ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Process Improvement ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Front End ◽  
Electrical Phenomenon ◽  
Specific Source ◽  
Crystalline Defect

Abstract A failure incurred in the front-end is typically a bottleneck to production due the need for physical failure analysis (PFA). Often the challenge is to perform timely localization of the front-end defect, or finding the exact physical defect for process improvement. Many process parameters affect the device behaviour and cause the front-end defect. Simply, the failures are of two types: high-resistance and leakage. A leakage mode defect is the most difficult to inspect. Although conductive atomic force microscopy and six probes nano-probing are popular tools for front-end failure inspection, some specific defects still need more effort. The electrical phenomenon and analysis of a crystalline defect will be demonstrated in this paper. The details will be discussed below.

Enhanced SEM Doping Contrast

2003 ◽  
Author(s):  
C.Y. Lin ◽  
J. H. Lee
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Electron Beams ◽  
Front End ◽  
Additional Doping ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Scanning electron beams provide a superior method of failure analysis by observing the voltage contrast (VC) both in frontend and back-end processes. Back-end VC tells us both metal/via open/short issues. Front-end VC tells us not only open/short issue but also additional doping information. A case on the application of passive voltage contrast (PVC) on doping information was studied. This paper explains the mechanism producing passive voltage contrast and describes three methods of sample preparation and provides examples of the results achieved.

Application of the atomic force microscope to integrated circuit failure analysis

1993 ◽  
Vol 33 (11-12) ◽  
pp. 1947-1956 ◽  
Author(s):  
Mark R. Rodgers ◽  
Mark A. Wendman ◽  
Frank D. Yashar
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Integrated Circuit ◽  
Atomic Force
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