Enhanced SEM Doping Contrast

2003 ◽  
Author(s):  
C.Y. Lin ◽  
J. H. Lee
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Electron Beams ◽  
Front End ◽  
Additional Doping ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Scanning electron beams provide a superior method of failure analysis by observing the voltage contrast (VC) both in frontend and back-end processes. Back-end VC tells us both metal/via open/short issues. Front-end VC tells us not only open/short issue but also additional doping information. A case on the application of passive voltage contrast (PVC) on doping information was studied. This paper explains the mechanism producing passive voltage contrast and describes three methods of sample preparation and provides examples of the results achieved.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Failure Analysis of FinFET Circuitry at GHz Speeds Using Voltage-Contrast and Stroboscopic Techniques on a Scanning Electron Microscope

2019 ◽  
Author(s):  
James Vickers ◽  
Seema Somani ◽  
Blake Freeman ◽  
Pete Carleson ◽  
Lubomír Tùma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Electrical Activity ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Contrast Mechanism ◽  
Voltage Contrast ◽  
Working Device ◽  
Scanning Electron

Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling electrical activity on any transistor within a working device to be probed. We demonstrate gigahertz-bandwidth probing at 10-nm resolution using a stroboscopic pulsed electron source.

Characterization Complex Voltage Contrast Image Using Atomic Force Microscopy

2004 ◽  
Author(s):  
C.H. Chen ◽  
C.M. Shen ◽  
C.M. Huang ◽  
Y.F. Hsia
Keyword(s):  
Failure Analysis ◽  
Scanning Probe ◽  
Production Lines ◽  
Force Microscopy ◽  
Atomic Force ◽  
Front End ◽  
Probe Microscope ◽  
Voltage Contrast ◽  
Contrast Image ◽  
Electrical Data

Abstract The passive voltage contrast (PVC) in this experiment was widely used to detect open/short issues for most failure analyses. However, most of back-end particles were visible, but front-end particles were not. And sometimes only used PVC image, the failure mechanism was un-imaginable. As a result, we needed to collect some electrical data to explain complex PVC image, before physical failure analysis (PFA) was started. This paper shows how to use the scanning probe microscope (SPM) tool to make up PVC method and overcome the physical failure analysis challenge. From our experiment, the C-AFM could provide more information of the defect type and give faster feedback to production lines.

Beam-Based Localization Techniques for 0.18um IC Failure Analysis After Reliability Test

2002 ◽  
Author(s):  
Re-Long Chiu ◽  
Hui Zhang ◽  
Wen-Szu Chung ◽  
Mark Cherng ◽  
Xu Liu
Keyword(s):  
Sample Preparation ◽  
Contact Resistance ◽  
Failure Analysis ◽  
Gate Oxide ◽  
Reliability Test ◽  
Line Contact ◽  
Defect Site ◽  
Backscattered Electron ◽  
Voltage Contrast ◽  
Non Destructive

Abstract Locating the defect site in current devices is complicated by their density and size. Voltage contrast (VC) imaging and backscattered electron (BSE) imaging are non-destructive beam-based location techniques. We can locate the defect to single poly line, contact and via by combining EMMI, LC, layout and bit map address information. Some reliability failure analysis cases are presented to demonstrate the effectiveness of the beam-based techniques. VC imaging and BSE imaging are used to locate the defect site precisely. The subsequent steps include deprocess and precision FIB cut for sample preparation. SEM or TEM is then used to identify failures caused by gate oxide pinhole, contact junction leakage, high butted contact resistance or tungsten residue.

Methodology and Application of Backside Physical Failure Analysis

2011 ◽  
Author(s):  
Li-Lung Lai ◽  
HungLing Chen ◽  
Huimin Gao
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Scanning Electron

Abstract There are some advantages to performing physical failure analysis from the backside as opposed to normal frontside analysis. However, there are challenges to be overcome with regard to sample preparation and scanning electron microscopy. Thus, we introduce this unusual technique to overcome the barrier of difficulty. This technique can eventually lead to the development of a versatile methodology that can be used in actual applications for failure analysis.

The Study and Methodology of Defects Isolation For Contacts of Non-Isolated Active Region on New Logic Designs

2005 ◽  
Author(s):  
C. H. Wang ◽  
C. M. Shen ◽  
C. J. Lin ◽  
Z. H. Lee ◽  
J. H. Chou
Keyword(s):  
Active Region ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Operating Voltage ◽  
Circuit Layout ◽  
Analysis Process ◽  
Atomic Force ◽  
Front End ◽  
Voltage Contrast

Abstract With the advancement in technology and lower operating voltage, new standards have evolved in circuit layout and design. Some of these new standards have increased the difficulties of the physical failure analysis process, especially on the front-end. The phenomenon described in this paper is the unusual voltage contrast (VC) and conductive atomic force microscope (C-AFM) curve on a non-isolated active region. The model and mechanism are demonstrated for front-end failure analysis. Based on this, the solution for analysis is investigated.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

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