Coupling C-AFM with Nanoprobing Technique for Further Junction Leakage Analysis

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Chen Chuang ◽  
Chen-May Huang ◽  
Shi-Chen Lin ◽  
Jie-Fei Chang
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
Failure Mechanisms ◽  
Gate Leakage ◽  
Process Technology ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Or Gate

Abstract With the evolution of advanced process technology, failure analysis has become more and more difficult because more defects are of the non-visual type (very tiny or even invisible defects) from new failure mechanisms. In this article, a novel and effective methodology which couples the conductive atomic force microscope (C-AFM) with nano-probing technique is proposed to reveal some particular failure modes which were not observable and difficult to identify with traditional physical failure analysis techniques. The capability of coupling C-AFM with nano-probing technique is used to distinguish cases which suffer general junction leakage or gate leakage from those that form the fake junction leakage or gate leakage cases. C-AFM can detect the abnormal contacts quickly, and nano-probing could provide the precise electrical characteristic further. Then, combining these variant measuring results, the favorable tactics can be adopted to deal with different states.

Application of AFP in Resolving Systematic Issue in Wafer Fabrication

2013 ◽  
Author(s):  
Hui Peng Ng ◽  
Ghim Boon Ang ◽  
Chang Qing Chen ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Failure Mechanisms ◽  
Critical Role ◽  
Electrical Characterization ◽  
Process Technology ◽  
Atomic Force ◽  
Defect Localization ◽  
Non Volatile Memory ◽  
Visual Failure

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Failure Analysis of Laser Blown Metal Fuse Failures in Submicron Technology by C-AFM

2006 ◽  
Author(s):  
Liang-Feng Wen ◽  
Chien-Hui Chen ◽  
Allen Timothy Chang
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Laser Cutting ◽  
Spot Size ◽  
Repair Rate ◽  
Atomic Force ◽  
Measurement Laser

Abstract This paper presents a method of using a conductive atomic force microscope (C-AFM) to characterize a submicron metal fuse that has been blown open inadequately by laser. In order to obtain a proper I-V curve measured using the C-AFM without affecting the incompletely opened fuse, the paper proposes a method of preserving the fuse by coating its surface with spin-on glass. The paper explains how differences in laser cutting machines resulted in the high failure repair rate of customer product despite equivalent energy and spot size settings. Analysis of the fuse bank circuitry on wafers helped to find the critical physical differences between a fully blown and a poorly blown fuse. By overcoming difficulties in preserving the blown fuse failure sites for C-AFM measurement, laser settings could be easily optimized to ensure proper fuse opening.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

Failure Analysis Techniques for Lead-Free Solder Joints

2005 ◽  
Author(s):  
Todd Castello ◽  
Dan Rooney ◽  
Dongkai Shangguan
Keyword(s):  
Failure Analysis ◽  
Printed Circuit Board ◽  
Failure Modes ◽  
Circuit Board ◽  
Lead Free ◽  
Lead Free Solder ◽  
Printed Circuit Board Assembly ◽  
Analysis Techniques ◽  
Solder Interconnects ◽  
Free Solder

Abstract Printed circuit board assembly with lead free solder is now a reality for most global electronics manufacturers. Extensive research and development has been conducted to bring lead free assembly processes to a demonstrated proficiency. Failure analysis has been an integral part of this effort and will continue to be needed to solve problems in volume production. Many failure analysis techniques can be directly applied to study lead free solder interconnects, while others may require some modification in order to provide adequate analysis results. In this paper, several of the most commonly applied techniques for solder joint failure analysis will be reviewed, including visual inspection, x-ray radiography, mechanical strength testing, dye & pry, metallography, and microscopy/photomicrography, comparing their application to lead bearing and lead free solder interconnects. Common failure modes and mechanisms will be described with examples specific to lead free solders, following PCB assembly as well as after accelerated reliability tests.

Study of Thermal Cycle Induced CPI Failure Mode in a Lidded FC-BGA Package

2019 ◽  
Author(s):  
Muhammad Monzur Morshed ◽  
Esther Chen ◽  
Anita Madan
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Failure Modes ◽  
Material Selection ◽  
Interfacial Stress ◽  
Analysis Techniques ◽  
Bga Package ◽  
Induced Defects ◽  
Fatigue Failures ◽  
Insight Into

Abstract Dissimilarities of thermal expansion coefficient between chip and package materials results in stress and strain at the solder interconnect leading to fatigue failures. Underfill is used between chip and package to reduce the interfacial stress and hence increase reliability. In this work, four flipchip package test vehicles underwent thermal cycling to accelerate the stress and were investigated systematically with different failure analysis techniques to study their failure modes. The prevalent failure mode was observed to be at the corner area between the chip and package using different advanced failure analysis techniques. This work demonstrates the technical complexity of analyzing stress induced defects and provides insight into CPI-based material selection.

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