A System for Electromechanical Reliability Testing of MEMS Devices

2006 ◽  
Author(s):  
Stefan Spinner ◽  
Michael Doelle ◽  
Patrick Ruther ◽  
Oliver Paul ◽  
Ilia Polian ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Microelectromechanical Systems ◽  
Automated Analysis ◽  
Dynamic Loads ◽  
Reliability Testing ◽  
Mems Devices ◽  
Single Chip ◽  
Wafer Level ◽  
Optical Inspection

Abstract This paper reports on a setup and a method that enables automated analysis of mechanical stress impact on microelectromechanical systems (MEMS). In this setup both electrical and optical inspection are available. Reliability testing is possible on a single chip as well as on the wafer level. Mechanical stress is applied to the tested structure with programmable static forces up to 3.6 N and dynamic loads at frequencies up to 20 Hz. The applications of the presented system include the postmanufacturing test, characterization and stress screens as well as reliability studies. We report preliminary results of long-term reliability testing obtained for a CMOS-based stress sensor.

Packaging Options for MEMS Devices

MRS Bulletin ◽  
2003 ◽  
Vol 28 (1) ◽  
pp. 51-54 ◽  
Author(s):  
Erik Jung
Keyword(s):  
Integrated Circuit ◽  
Microelectromechanical Systems ◽  
Mems Devices ◽  
Single Chip ◽  
Wafer Level ◽  
Product Failure ◽  
Product Success ◽  
Microelectronics Industry ◽  
The Right ◽  
Crucial Part

AbstractMicroelectromechanical systems (MEMS) devices can be delicate structures sensitive to damage from handling or environmental influences. Their functionality may furthermore depend on sealing out the environment or being in direct contact with it. Stress, thermal load, and contaminants may change their characteristics. Here, packaging technology is challenged to extend from microelectronics toward MEMS and optoelectronic MEMS (MOEMS). Today's approaches rely on modified single-chip packages derived from the microelectronics industry, wafer-level capping to enable the device to be packaged like an integrated circuit, or highly specialized packages designed to complement the function of the MEMS device itself. Selecting the proper packaging method may tip the scale toward a product success or a product failure. Choosing the right technology, therefore, is a crucial part of the product design.

Microsensors, MEMS and NEMS Based Complex Adaptive Smart Devices and Systems

2001 ◽  
Author(s):  
Vijay K. Varadan
Keyword(s):  
Self Assembly ◽  
Communication Systems ◽  
Microelectromechanical Systems ◽  
System Level ◽  
Smart Devices ◽  
Mems Devices ◽  
Wafer Level ◽  
Sensors And Actuators ◽  
Complex Adaptive ◽  
Microelectronics Industry

Abstract The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sizes now down at the sub micron level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and MicroElectroMechanical Systems (MEMS). This effort offers the promise of: 1. Increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed for the IC and microelectronics industry. Examples include micro stereo lithographic and micro molding techniques. 2. Developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines. 3. Development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation. 4. Development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems.

Wafer-Level Strength and Fracture Toughness Testing of Surface-Micromachined MEMS Devices

1999 ◽  
Vol 605 ◽  
Author(s):  
H. Kahn ◽  
N. Tayebi ◽  
R. Ballarini ◽  
R.L. Mullen ◽  
A.H. Heuer
Keyword(s):  
Fracture Toughness ◽  
Tensile Strength ◽  
Microelectromechanical Systems ◽  
Reliability Prediction ◽  
Bend Strength ◽  
Mems Devices ◽  
Wafer Level ◽  
Toughness Testing ◽  
Loading Devices

AbstractDetermination of the mechanical properties of MEMS (microelectromechanical systems) materials is necessary for accurate device design and reliability prediction. This is most unambiguously performed using MEMS-fabricated test specimens and MEMS loading devices. We describe here a wafer-level technique for measuring the bend strength, fracture toughness, and tensile strength of MEMS materials. The bend strengths of surface-micromachined polysilicon, amorphous silicon, and polycrystalline 3C SiC are 5.1±1.0, 10.1±2.0, and 9.0±1.0 GPa, respectively. The fracture toughness of undoped and P-doped polysilicon is 1.2±0.2 MPa√m, and the tensile strength of polycrystalline 3C SiC is 3.2±1.2 GPa. These results include the first report of the mechanical strength of micromachined polycrystalline 3C SiC.

Developments in Microelectromechanical Systems (MEMS): A Manufacturing Perspective

2003 ◽  
Vol 125 (4) ◽  
pp. 816-823 ◽  
Author(s):  
Srinivas A. Tadigadapa ◽  
Nader Najafi
Keyword(s):  
Microelectromechanical Systems ◽  
Process Development ◽  
Reliability Testing ◽  
Mems Devices ◽  
Manufacturing Strategy ◽  
Cad Tools ◽  
Fragile State ◽  
Mems Packaging ◽  
Overall Performance

This paper presents a discussion of some of the major issues that need to be considered for the successful commercialization of MEMS products. The diversity of MEMS devices and historical reasons have led to scattered developments in the MEMS manufacturing infrastructure. A good manufacturing strategy must include the complete device plan including package as part of the design and process development of the device. In spite of rapid advances in the field of MEMS there are daunting challenges that lie in the areas of MEMS packaging, and reliability testing. CAD tools for MEMS are starting to get more mature but are still limited in their overall performance. MEMS manufacturing is currently at a fragile state of evolution. In spite of all the wonderful possibilities, very few MEMS devices have been commercialized. In our opinion, the magnitude of the difficulty of fabricating MEMS devices at the manufacturing level is highly underestimated by both the current and emerging MEMS communities. A synopsis of MEMS manufacturing issues is presented here.

Finite Volume Method for Simulation of Creep in RF MEMS Devices

2011 ◽  
Author(s):  
Shankhadeep Das ◽  
Marisol Koslowski ◽  
Sanjay R. Mathur ◽  
Jayathi Y. Murthy
Keyword(s):  
Finite Volume ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Algebraic Equations ◽  
Mems Devices ◽  
Elastic Solids ◽  
A Cell ◽  
Finite Volume Approach ◽  
Term Creep

Radio-frequency microelectromechanical systems (RF MEMS) are widely used in contact actuators and capacitative switches. In these devices, the membrane deforms under electrostatic actuation. With time, these devices undergo creep deformation that reduces the gap between the metallic membrane and the electrodes, and can result in self pull-in at lower applied voltages than for normal pull-in. It is important to accurately model creep in RF MEMS devices to understand their long-term behavior and to improve their reliability. In this paper, we extend a cell-centered finite volume approach previously developed to describe linear elastic solids to model visco-plastic and creep phenomena. The finite volume discretization produces a set of algebraic equations, which is solved using a biconjugate gradient stabilized (BCGSTAB) solver. Test cases are first presented verifying the accuracy of the method. Results are then presented in this paper for the long-term creep behavior of a fixed-fixed MEMS device.

MIM Capacitor Reliability Fault Identification Using IR Microthermography and Automated De-processing: A Case Study

2003 ◽  
Author(s):  
J. Steele ◽  
T. Remmel ◽  
S. Wilson ◽  
M. Nair ◽  
P. Sanders ◽  
...  
Keyword(s):  
Fault Identification ◽  
Reliability Testing ◽  
Metal Insulator ◽  
Temperature Conditions ◽  
Optical Inspection ◽  
Metal Insulator Metal ◽  
Ir Emission ◽  
Mim Capacitors

Abstract Advanced RF IC’s incorporate numerous components along with the CMOS circuitry. One component is a metal-insulator-metal (MIM) capacitor. Test capacitors have been stressed using accelerated voltage and temperature conditions to assess the long-term reliability. This paper describes a methodology for evaluating the MIM capacitors that have failed during reliability testing. IR microthermography was developed to detect leakage locations in areas that are not visible to optical inspection or standard emission microscopes. These areas were deprocessed to correlate the IR emission and physical defect locations. This information is utilized to understand the failures and improve the reliability.

RF MEMS Switch Heat Dissipation in Discrete and Wafer-Level MEMS Packages

2002 ◽  
Author(s):  
Lei L. Mercado ◽  
Tien-Yu Tom Lee ◽  
Shun-Meen Kuo ◽  
Vern Hause ◽  
Craig Amrine
Keyword(s):  
Power Density ◽  
Contact Area ◽  
Heat Dissipation ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Material Selection ◽  
Junction Temperature ◽  
Mems Devices ◽  
Wafer Level ◽  
Die Attach

In discrete RF (Radio Frequency) MEMS (MicroElectroMechanical Systems) packages, MEMS devices were fabricated on Silicon or GaAs (Galium Arsenide) chips. The chips were then attached to substrates with die attach materials. In wafer-level MEMS packages, the switches were manufactured directly on substrates. For both types of packages, when the switches close, a contact resistance of approximately 1 Ohm exists at the contact area. As a result, during switch operations, a considerable amount of heat is generated in the minuscule contact area. The power density at the contact area could be up to 1000 times higher than that of typical power amplifiers. The high power density may overheat the contact area, therefore affect switch performance and jeopardize long-term switch reliabilities. In this paper, thermal analysis was performed to study the heat dissipation at the switch contact area. The goal is to control the “hot spots” and lower the maximum junction temperature at the contact area. A variety of chip materials, including Silicon, GaAs have been evaluated for the discrete packages. For each chip material, the effect of die attach materials was considered. For the wafer-level packages, various substrate materials, such as ceramic, glass, and LTCC (Low-Temperature Cofire Ceramic) were studied. Thermal experiments were conducted to measure the temperature at the contact area and its vicinity as a function of DC and RF powers. Several solutions in material selection and package configurations were explored to enable the use of MEMS with chips or substrates with relatively poor thermal conductivity.

Microelectromechanical Systems Cantilever Resonators: Pressure-Dependent Gas Film Damping

2020 ◽  
Vol 142 (9) ◽  
Author(s):  
Chu Rainer Kwang-Hua
Keyword(s):  
Quality Factor ◽  
Knudsen Number ◽  
Microelectromechanical Systems ◽  
Unit Length ◽  
Mems Devices ◽  
Dynamical Friction ◽  
Quality Factors ◽  
Wafer Level ◽  
Unsteady Fluid ◽  
Parameter Per Unit Length

Abstract Under near-vacuum conditions, the fluid frictional dissipation or approximately the inverse of the quality factor of a microcantilever once the intrinsic dissipation can be neglected is proportional to the low pressure. We shall investigate the dynamic behavior of micro-electromechanical systems (MEMS) devices via the calculation of the quality factor or frictional damping forces resulting from surrounding gases. Here, we illustrated some specific examples relevant to the computation of the quality factor or dynamical friction for an oscillating microcantilever in air via measurements of the paper of Okada et al. (Okada, H., Itoh, T., and Suga, T., 2008, Wafer Level Sealing Characterization Method Using Si Micro Cantilevers,” Sens. Actuators A, 147(2), pp. 359–364) considering the quality factors of the CM (a label for a microcantilever: 500 × 90 × 5 μm3 Si microcantilever (the measured resonance frequency: 23.7 kHz) and the paper of Kara et al. (Kara, V., Yakhot, V., and Ekinci, K. L., 2017, Generalized Knudsen Number for Unsteady Fluid Flow, Phys. Rev. Lett., 118(7), p. 074505) in rarefied gases regime. We present the corrected quality factor or dynamical friction over the whole range of the Knudsen number considering the CM part by Okada et al. Our new plot considering the quality factor which is proportional to the inverse of the dissipative friction parameter per unit length, pressure as well as the Knudsen number over the whole range should be useful to researchers in this field.

Mechanics of Direct Wafer Bonding

2003 ◽  
Author(s):  
K. T. Turner ◽  
S. M. Spearing
Keyword(s):  
Wafer Bonding ◽  
Microelectromechanical Systems ◽  
Surface Condition ◽  
Bonding Process ◽  
Mems Devices ◽  
Wafer Level ◽  
Modeling Framework ◽  
Etch Patterns ◽  
Direct Wafer Bonding ◽  
Bonding Failure

Direct wafer bonding, also known as fusion bonding, has emerged as a key process in the manufacture of microelectromechanical systems (MEMS). The use of wafer bonding increases design flexibility, allows integration of dissimilar materials, and permits wafer-level packaging. While direct wafer bonding processes are becoming more prevalent in the fabrication of MEMS devices, failure during the bonding process is often a problem and is not completely understood. A modeling framework, based on the mechanics of the bonding process, has been on the mechanics of the bonding process, has been developed to correlate bonding failure to wafer geometry, surface condition, and etch patterns. The modeling approach is based on an energy balance between the reduction in surface energy as the bond is formed and the strain energy that is stored in the wafers as they conform to each other. The model allows the effect of flatness deviations, wafer geometry (i.e. thickness, diameter), wafer mounting, and etched features on the bonding process to be shown. Modeling results demonstrate that wafer bow, wafer thickness, and certain types of etch patterns are critical factors in controlling bonding success. Bonding experiments, in which specific flatness deviations and etch patterns have been introduced on wafers prior to bonding, have been carried out and compared to the modeling results. The understanding of the process gained through the modeling can be used to set tolerances on wafers, assist in mask layout, and guide the design of bonding equipment to ensure success in direct wafer bonding processes.

scholarly journals On the Feasibility of Fan-Out Wafer-Level Packaging of Capacitive Micromachined Ultrasound Transducers (CMUT) by Using Inkjet-Printed Redistribution Layers

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 564
Author(s):  
Ali Roshanghias ◽  
Marc Dreissigacker ◽  
Christina Scherf ◽  
Christian Bretthauer ◽  
Lukas Rauter ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Temperature Cycling ◽  
Ultrasound Transducers ◽  
Wafer Level ◽  
On Demand ◽  
Mems Sensor ◽  
Wafer Level Packaging ◽  
Drop On Demand ◽  
Inkjet Printing Technology

Fan-out wafer-level packaging (FOWLP) is an interesting platform for Microelectromechanical systems (MEMS) sensor packaging. Employing FOWLP for MEMS sensor packaging has some unique challenges, while some originate merely from the fabrication of redistribution layers (RDL). For instance, it is crucial to protect the delicate structures and fragile membranes during RDL formation. Thus, additive manufacturing (AM) for RDL formation seems to be an auspicious approach, as those challenges are conquered by principle. In this study, by exploiting the benefits of AM, RDLs for fan-out packaging of capacitive micromachined ultrasound transducers (CMUT) were realized via drop-on-demand inkjet printing technology. The long-term reliability of the printed tracks was assessed via temperature cycling tests. The effects of multilayering and implementation of an insulating ramp on the reliability of the conductive tracks were identified. Packaging-induced stresses on CMUT dies were further investigated via laser-Doppler vibrometry (LDV) measurements and the corresponding resonance frequency shift. Conclusively, the bottlenecks of the inkjet-printed RDLs for FOWLP were discussed in detail.

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