A Novel Non-Destructive Approach to Deprocess the Sealing Cap from MEMS Device for Failure Analysis

2010 ◽  
Author(s):  
Hsien-Wen Liu ◽  
King-Ting Chiang ◽  
Tao-Chi Liu ◽  
Ming-Lun Chang ◽  
Jandel Lin
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Ex Situ ◽  
Mems Devices ◽  
Mems Sensors ◽  
Micro Electro Mechanical Systems ◽  
New Approach ◽  
Wet Chemical ◽  
Mems Device ◽  
Non Destructive

Abstract Applications of Micro-Electro-Mechanical Systems (MEMS) sensors have developed rapidly in the last decade, increasing the need of Failure Analysis (FA) to characterize abnormalities and to identify failure modes of various types of MEMS devices. One of the greatest challenges is removal of the sealing cap from the MEMS device without any impact to the moveable sensing elements. A novel non-destructive technique has been successfully developed using KOH wet chemical etching followed by application of ex-situ hand sticking to deprocess the sealing cap from an accelerometer device. This new approach provides a quick and reliable way to remove the sealing cap from a MEMS device.

scholarly journals Failure Analysis of MEMS Using Thermally-Induced Voltage Alteration

2000 ◽  
Author(s):  
Jeremy A. Walraven ◽  
Edward I. Cole ◽  
Paiboon Tangyunyong
Keyword(s):  
Laser Scanning ◽  
Thermal Stimulus ◽  
Mems Devices ◽  
Induced Voltage ◽  
Micro Electro Mechanical Systems ◽  
New Approach ◽  
Thermally Induced ◽  
Mems Device ◽  
Heat Sinking ◽  
Significant Production

Abstract Electrical shorting in micro-electro-mechanical systems (MEMS) is a significant production and manufacturing concern. We present a new approach to localizing shorted MEMS devices using Thermally-Induced Voltage Alteration (TIVA) [1]. In TIVA, the shorted, thermally isolated MEMS device is very sensitive to thermal stimulus. The site of the MEMS short will respond as a thermocouple when heated. By monitoring the potential across the shorted MEMS device as a laser scans across the sample, an image showing the location of the thermocouple (short site) can be generated. The TIVA signal for thermally isolated MEMS devices is much higher than that observed for conventional IC interconnections. This results from the larger temperature gradients generated during laser scanning due to little or no substrate heat sinking. The capability to quickly localize shorted MEMS structures is demonstrated by several examples. Thermal modeling of heat distributions is presented and is consistent with the experimental results.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects

2015 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Falk Naumann ◽  
Jens Beyersdorfer ◽  
Tony Veches
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Memory Devices ◽  
Metallographic Cross Section ◽  
Electron Beam Induced Current ◽  
Thermal Simulations ◽  
Lock In ◽  
Non Destructive

Abstract In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.

Package Designs and Associated Challenges for Environment Sensitive MEMS Sensors

2009 ◽  
Author(s):  
Vijay Sarihan ◽  
Jian Wen ◽  
Gary Li
Keyword(s):  
Design Methodology ◽  
Failure Modes ◽  
Electrical Response ◽  
Cost Effective ◽  
Mems Devices ◽  
Mems Sensors ◽  
Package Design ◽  
Sensor Applications ◽  
Predictive Design ◽  
Package Reliability

Effective packaging of MEMS devices has lagged the development of unique sensors suitable for a variety of applications. Packaging challenges are often what prevent wider application and extensive commercialization of MEMS Sensors. MEMS devices are designed for sensing the environment. Their detection capability should not be adversely impacted by the package and the package reliability should not be compromised by the environment. Two different Sensor applications are used to highlight the packaging challenges. In one case the Sensor electrical output response was becoming nonlinear in the range of valid operating temperatures after packaging. The ASIC controller was not able to compensate for this nonlinearity. In the second application package design caused electrical response resonance within the operating environment range. Advanced package design methodology was developed to couple simulations for package reliability prediction for different failure modes with Sensor performance predictions to deliver cost effective and reliable packages. The predictive design methodology was extensively validated with experimental results at every stage.

Accelerated Degradation Modeling and Statistical Analysis of MEMS Device Based on Competing Failure

2012 ◽  
Vol 531-532 ◽  
pp. 580-583
Author(s):  
Qing Xia ◽  
Zong Jie Cao ◽  
Yuan Da Wang ◽  
Peng Sun
Keyword(s):  
Parameter Estimation ◽  
Reliability Analysis ◽  
Failure Modes ◽  
Reliability Function ◽  
Accelerated Life Test ◽  
Mems Devices ◽  
Accelerated Degradation ◽  
Degradation Modeling ◽  
Degradation Failure ◽  
Mems Device

Traditional reliability analysis of MEMS devices is based on only one failure mode, but paroxysmal failure and degradation failure are simultaneous on one MEMS device which is called as competing failure modes. Accelerated degradation modeling and parameter estimation based on competing failure modes are elementary contents of reliability analysis, in which paroxysmal failure and degradation failure are integrated in the process of educing reliability function, and elementary theories of reliability and statistics are used. The method of accelerated degradation modeling and parameter estimation is proved to be precise in a simulation of accelerated life test on a kind of MEMS device which have the two failure modes: paroxysmal failure and degradation failure, and they are have relations with stress variable: current.

scholarly journals Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS)

1997 ◽  
Author(s):  
K. A. Peterson ◽  
P. Tangyunyong ◽  
D. L. Barton
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Ion Beam ◽  
Mechanical Systems ◽  
Acoustic Microscopy ◽  
Mems Devices ◽  
Contrast Imaging ◽  
Sensors And Actuators ◽  
Emission Analysis ◽  
Wide Range

Abstract Micro-Electrical Mechanical Systems (MEMS) is an emerging technology with demonstrated potential for a wide range of applications including sensors and actuators for medical, industrial, consumer, military, automotive and instrumentation products. Failure analysis (FA) of MEMS is critically needed for the successful design, fabrication, performance analysis and reliability assurance of this new technology. Many devices have been examined using techniques developed for integrated circuit analysis, including optical inspection, scanning laser microscopy (SLM), scanning electron microscopy (SEM), focused ion beam (FIB) techniques, atomic force microscopy (AFM), infrared (lR) microscopy, light emission (LE) microscopy, acoustic microscopy and acoustic emission analysis. For example, the FIB was used to microsection microengines that developed poor performance characteristics. Subsequent SEM analysis clearly demonstrated the absence of wear on gear, hub, and pin joint bearing surfaces, contrary to expectations. Another example involved the use of infrared microscopy for thermal analysis of operating microengines. Hot spots were located, which did not involve the gear or hub, but indicated contact between comb structures which drive microengines. Voltage contrast imaging proved useful on static and operating MEMS in both the SEM and the FIB and identified electrostatic clamping as a potentially significant contributor to failure mechanisms in microengines. This work describes MEMS devices, FA techniques, failure modes, and examples of FA of MEMS.

scholarly journals Microwave MEMS devices designed for process robustness and operational reliability

2011 ◽  
Vol 3 (5) ◽  
pp. 547-563 ◽  
Author(s):  
Mikael Sterner ◽  
Nutapong Somjit ◽  
Umer Shah ◽  
Sergey Dudorov ◽  
Dmitry Chicherin ◽  
...  
Keyword(s):  
Failure Modes ◽  
Mechanical Performance ◽  
Operational Reliability ◽  
Phase Shifters ◽  
Mems Devices ◽  
Free Standing ◽  
Design Elements ◽  
Mems Switch ◽  
Tunable Capacitors ◽  
Mems Device

This paper presents an overview on novel microwave micro-electromechanical systems (MEMS) device concepts developed in our research group during the last 5 years, which are specifically designed for addressing some fundamental problems for reliable device operation and robustness to process parameter variation. In contrast to conventional solutions, the presented device concepts are targeted at eliminating their respective failure modes rather than reducing or controlling them. Novel concepts of MEMS phase shifters, tunable microwave surfaces, reconfigurable leaky-wave antennas, multi-stable switches, and tunable capacitors are presented, featuring the following innovative design elements: dielectric-less actuators to overcome dielectric charging; reversing active/passive functions in MEMS switch actuators to improve recovery from contact stiction; symmetrical anti-parallel metallization for full stress-control and temperature compensation of composite dielectric/metal layers for free-standing structures; monocrystalline silicon as structural material for superior mechanical performance; and eliminating thin metallic bridges for high–power handling. This paper summarizes the design, fabrication, and measurement of devices featuring these concepts, enhanced by new characterization data, and discusses them in the context of the conventional MEMS device design.

Stiffness Measurement of Micro-Cantilever Based on Negative Electrostatic Stiffness

2020 ◽  
Vol 12 (1) ◽  
pp. 96-100
Author(s):  
Xianshan Dong ◽  
Qinwen Huang ◽  
Yun Huang ◽  
Wei Su ◽  
Ping Lai
Keyword(s):  
Basic Structure ◽  
Mems Devices ◽  
Mechanical Stiffness ◽  
Micro Electro Mechanical Systems ◽  
Mems Accelerometer ◽  
Mems Sensor ◽  
The Difference ◽  
Micro Cantilever ◽  
Fabrication Variation ◽  
Non Destructive

Micro-cantilever is basic structure of Micro-Electro-Mechanical-Systems (MEMS) sensor, and mechanical stiffness is the most important parameter of micro-cantilever. The mechanical stiffness can be affected by shape, size and material, and it should be experimentally measured for fabrication variation. Yet, the micro scale of MEMS cantilever makes the measurement difficult, and the traditional method isn't suitable for the micro-cantilever. This study proposes a new method for measuring the mechanical stiffness of micro-cantilever, and measurement of MEMS accelerometer was also experimentally carried out. The proposed method exploits the feature that the voltage applied on cantilever can lead to negative electrostatic stiffness, and this stiffness can change the deformation of cantilever. The mechanical stiffness can be obtained through analyzing the change of output. Results from this study coincided with our theoretical model, and the difference between results obtained by this method and SEM was 2.2%. This work provides a new way to precisely obtain mechanical stiffness of micro-cantilever using non-destructive method, making it helpful for researchers to design micro-cantilever and MEMS devices.

Evaluation on Stress and Optical Property of Thin Films Used in Optical MEMS Device

2003 ◽  
Vol 795 ◽  
Author(s):  
Lianchao Sun ◽  
Ping Hou
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Property ◽  
Film Stress ◽  
Mems Devices ◽  
Film Properties ◽  
Optical Mems ◽  
Micro Electro Mechanical Systems ◽  
Index Changes ◽  
Mems Device

ABSTRACTControl of the film stress and optical property has long been considered as an issue in the tunable optical MEMS (Micro-Electro-Mechanical Systems) devices. In this paper, the atmospheric evolution of Titanium Dioxide (TiO2) and Silicon Dioxide (SiO2) thin films for the optical MEMS devices were studied. These films were prepared by ion-assisted e-beam evaporation. It is found that as-deposited SiO2 films exhibit compressive stress; whereas, it is tensile in the TiO2 films under present processing conditions. When annealed at 150 °C, both SiO2 and TiO2 films show slight changes in stress with annealing time. However, increasing the anneal temperature to 250°C caused an apparent change of film stresses with time, in which SiO2 film turns into less compressive and TiO2 film appears to be more tensile. The optical properties after annealing were also investigated by measuring the thickness and the refractive index changes using the spectroscopic ellipsometry technique. At both experimental temperatures, the film thickness increases slightly and the refractive index at 1550 nm decreases a little at the initial annealing stage for SiO2 films. For TiO2 films, it is found that the refractive index increases after annealing at 250°C. This might be caused by the TiO2 film densification process during amorphous-to-crystalline phase transformation. Because most of the significant film evolutions occur during the initial 12 hours of annealing, a practical way of stabilizing the film properties in a MEMS device is to pre-anneal the as-deposited thin films.

Sign in / Sign up

Export Citation Format

Share Document