scholarly journals Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS)

1997 ◽  
Author(s):  
K. A. Peterson ◽  
P. Tangyunyong ◽  
D. L. Barton
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Ion Beam ◽  
Mechanical Systems ◽  
Acoustic Microscopy ◽  
Mems Devices ◽  
Contrast Imaging ◽  
Sensors And Actuators ◽  
Emission Analysis ◽  
Wide Range

Abstract Micro-Electrical Mechanical Systems (MEMS) is an emerging technology with demonstrated potential for a wide range of applications including sensors and actuators for medical, industrial, consumer, military, automotive and instrumentation products. Failure analysis (FA) of MEMS is critically needed for the successful design, fabrication, performance analysis and reliability assurance of this new technology. Many devices have been examined using techniques developed for integrated circuit analysis, including optical inspection, scanning laser microscopy (SLM), scanning electron microscopy (SEM), focused ion beam (FIB) techniques, atomic force microscopy (AFM), infrared (lR) microscopy, light emission (LE) microscopy, acoustic microscopy and acoustic emission analysis. For example, the FIB was used to microsection microengines that developed poor performance characteristics. Subsequent SEM analysis clearly demonstrated the absence of wear on gear, hub, and pin joint bearing surfaces, contrary to expectations. Another example involved the use of infrared microscopy for thermal analysis of operating microengines. Hot spots were located, which did not involve the gear or hub, but indicated contact between comb structures which drive microengines. Voltage contrast imaging proved useful on static and operating MEMS in both the SEM and the FIB and identified electrostatic clamping as a potentially significant contributor to failure mechanisms in microengines. This work describes MEMS devices, FA techniques, failure modes, and examples of FA of MEMS.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects

2015 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Falk Naumann ◽  
Jens Beyersdorfer ◽  
Tony Veches
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Memory Devices ◽  
Metallographic Cross Section ◽  
Electron Beam Induced Current ◽  
Thermal Simulations ◽  
Lock In ◽  
Non Destructive

Abstract In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.

scholarly journals Analysis of Delaminated Hybrid Carbon Fiber Composites in MODE-I

2021 ◽  
Vol 9 (2) ◽  
pp. 605-624
Author(s):  
Hassan A. Alessa, Et. al.
Keyword(s):  
Failure Analysis ◽  
Composite Laminates ◽  
Composite Structures ◽  
High Performance ◽  
Failure Modes ◽  
Matrix Material ◽  
Structural Response ◽  
Laminated Composite ◽  
Carbon Fiber Composites ◽  
Wide Range

Failure analysis of laminated composite structures has attracted a great deal of interest in recent years due to the increased application of composite materials in a wide range of high-performance structures. Intensive experimental and theoretical studies of failure analysis and prediction are being reviewed. Delamination, the separation of two adjacent plies in composite laminates, represents one of the most critical failure modes in composite laminates. In fact, it is an essential issue in the evaluation of composite laminates for durability and damage tolerance. Thus, broken fibers, delaminated regions, cracks in the matrix material, as well as holes, foreign inclusions and small voids constitute material and structural imperfections that can exist in composite structures. Imperfections have always existed and their effect on the structural response of a system has been very significant in many cases. These imperfections can be classified into two broad categories: initial geometrical imperfections and material or constructional imperfections

New Transmission Electron Microscope Characterization Techniques from Precision Focused Ion Beam Membranes

1999 ◽  
Vol 5 (S2) ◽  
pp. 886-887
Author(s):  
R. Hull ◽  
D. Dunn ◽  
J. Demarest ◽  
D.T. Mathes
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dissimilar Materials ◽  
Three Dimensions ◽  
Constant Thickness ◽  
Specimen Preparation ◽  
Contrast Imaging ◽  
Transmission Electron ◽  
Wide Range ◽  
Characterization Of Materials

The combination of focused ion beam (FIB) sputtering with transmission electron microscopy (TEM) offers new opportunities for the nanoscale characterization of materials. The FIB may be used to prepare membranes for TEM imaging which are: (i) Site selective, i.e. the membranes may be placed with sub-micron precision in all three dimensions, (ii) Largely free of differential sputtering artifacts, such that membranes may be prepared which are of constant thickness from structures with very dissimilar materials, and (iii) Of precisely known geometry.The challenges associated with FIB specimen preparation will also be discussed and are summarized in Figure 1: (a) Surface amorphization damage, (b) Residual differential sputtering effects, (c) Redeposition of sputtered material and (d) Membrane bowing due to internal or beaminduced stresses. It will be demonstrated that each of these effects can be sufficiently controlled to allow high quality diffraction contrast imaging in a wide range of materials.

Challenges in Failure Analysis of 3D Bonded Wafers

2018 ◽  
Author(s):  
Pradip Sairam Pichumani ◽  
Tanya Atanasova ◽  
Frieder Baumann ◽  
Michael Hatzistergos ◽  
Jay Mody ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Interfacial Strength ◽  
Auger Spectroscopy ◽  
Acoustic Microscopy ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Confocal Scanning ◽  
Double Cantilever Beam Test

Abstract This paper discusses the Failure Analysis methodology used to characterize 3D bonded wafers during the different stages of optimization of the bonding process. A combination of different state-of-the-art techniques were employed to characterize the 3D patterned and unpatterned bonded wafers. These include Confocal Scanning Acoustic Microscopy (CSAM) to determine the existence of voids, Atomic Force Microscopy (AFM) to determine the roughness of the films on the wafers, and the Double Cantilever Beam Test to determine the interfacial strength. Focused Ion Beam (FIB) was used to determine the alignment offset in the patterns. The interface was characterized by Auger Spectroscopy and the precession electron nanobeam diffraction analysis to understand the Cu grain boundary formation.

GHz-Scanning Acoustic Microscopy Combined with ToF-SIMS/AFM for Wafer-Level Failure Analysis of Bonding Interfaces

2019 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Failure Analysis ◽  
Ion Beam ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Wafer Level ◽  
Tof Sims

Abstract This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and its application for the detection of delamination at the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).

scholarly journals Multipurpose Drivers for MEMS Devices Based on a Single ASIC Implemented in a Low-Cost HV CMOS Process without a Triple Well

2021 ◽  
Vol 2021 ◽  
pp. 1-22
Author(s):  
Paul Miresan ◽  
Marius Neag ◽  
Marina Topa ◽  
Istvan Kovacs ◽  
Laurentiu Varzaru
Keyword(s):  
Output Voltage ◽  
Low Cost ◽  
Cmos Process ◽  
Maximum Output ◽  
Mems Devices ◽  
Sensors And Actuators ◽  
Operating Modes ◽  
Wide Range ◽  
External Resistor ◽  
Endoscopic Optical Coherence Tomography

This paper presents a novel topology for multipurpose drivers for MEMS sensors and actuators, suitable for integration in low-cost high-voltage (HV) CMOS processes, without a triple well. The driver output voltage, V MEMS , can be programmed over a wide, symmetrical range of positive and negative values, with the maximum output voltage being limited only by the maximum drain-source voltage that the HV transistors can handle. The driver is also able to short its output to the ground line and to leave it floating. It comprises generators for large positive and negative voltages followed by an LDO for each polarity that ensures that V MEMS has a well-controlled level and a very low ripple. The LDOs also help implement the grounded- and floating-output operating modes. Most of the required circuitry is integrated within a HV CMOS ASIC: the drivers for the large voltage generators, the error amplifiers of the LDOs, the DAC used to program the V MEMS level, and their support circuits. Thus, only the power stages of the large voltage generators, the pass transistors of the LDOs and two resistors for the LDO feedback network are discrete. A suitable configuration was devised for the latter that allows for the external resistor network to be shared by the two LDOs and prevents negative voltages from developing at the ASIC pins. Two circuit implementations of the proposed topology, designed in a low-cost 0.18 μm HV CMOS process, are presented in some detail. Simulation results demonstrate that they realize the required operating modes and provide V MEMS voltages programmable with steps of 100 mV or 200 mV, between -20 V and +20 V or between −45 V and +45 V, respectively. The output voltage ripple is relatively small, just 3.4 mVpkpk for the first implementation and 17 mVpkpk for the second. Therefore, both circuits are suitable for biasing and controlling a wide range of MEMS devices, including MEMS mirrors used in applications such as endoscopic optical coherence tomography.

scholarly journals Failure Analysis of a Half-Micron CMOS IC Technology

1996 ◽  
Author(s):  
A.Y. Liang ◽  
P. Tangyunyong ◽  
R.S. Bennett ◽  
R.S. Flores ◽  
J.M. Soden ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Deposition Process ◽  
Cmos Technology ◽  
Contrast Imaging ◽  
Wafer Processing ◽  
Voltage Contrast ◽  
Tools And Techniques

Abstract We present the results of recent failure analysis of an advanced, 0.5 um, fully planarized, triple metallization CMOS technology. A variety of failure analysis (FA) tools and techniques were used to localize and identify defects generated by wafer processing. These include light (photon) emission microscopy (LE), fluorescent microthermal imaging (FMI), focused ion beam cross sectioning, SEM/voltage contrast imaging, resistive contrast imaging (RCI), and e-beam testing using an IDS-5000 with an HP 82000. The defects identified included inter- and intra-metal shorts, gate oxide shorts due to plasma processing damage, and high contact resistance due to the contact etch and deposition process. Root causes of these defects were determined and corrective action was taken to improve yield and reliability.

A Novel Non-Destructive Approach to Deprocess the Sealing Cap from MEMS Device for Failure Analysis

2010 ◽  
Author(s):  
Hsien-Wen Liu ◽  
King-Ting Chiang ◽  
Tao-Chi Liu ◽  
Ming-Lun Chang ◽  
Jandel Lin
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Ex Situ ◽  
Mems Devices ◽  
Mems Sensors ◽  
Micro Electro Mechanical Systems ◽  
New Approach ◽  
Wet Chemical ◽  
Mems Device ◽  
Non Destructive

Abstract Applications of Micro-Electro-Mechanical Systems (MEMS) sensors have developed rapidly in the last decade, increasing the need of Failure Analysis (FA) to characterize abnormalities and to identify failure modes of various types of MEMS devices. One of the greatest challenges is removal of the sealing cap from the MEMS device without any impact to the moveable sensing elements. A novel non-destructive technique has been successfully developed using KOH wet chemical etching followed by application of ex-situ hand sticking to deprocess the sealing cap from an accelerometer device. This new approach provides a quick and reliable way to remove the sealing cap from a MEMS device.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

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