scholarly journals Failure Analysis of MEMS Using Thermally-Induced Voltage Alteration

Author(s):  
Jeremy A. Walraven ◽  
Edward I. Cole ◽  
Paiboon Tangyunyong

Abstract Electrical shorting in micro-electro-mechanical systems (MEMS) is a significant production and manufacturing concern. We present a new approach to localizing shorted MEMS devices using Thermally-Induced Voltage Alteration (TIVA) [1]. In TIVA, the shorted, thermally isolated MEMS device is very sensitive to thermal stimulus. The site of the MEMS short will respond as a thermocouple when heated. By monitoring the potential across the shorted MEMS device as a laser scans across the sample, an image showing the location of the thermocouple (short site) can be generated. The TIVA signal for thermally isolated MEMS devices is much higher than that observed for conventional IC interconnections. This results from the larger temperature gradients generated during laser scanning due to little or no substrate heat sinking. The capability to quickly localize shorted MEMS structures is demonstrated by several examples. Thermal modeling of heat distributions is presented and is consistent with the experimental results.

Author(s):  
Hsien-Wen Liu ◽  
King-Ting Chiang ◽  
Tao-Chi Liu ◽  
Ming-Lun Chang ◽  
Jandel Lin

Abstract Applications of Micro-Electro-Mechanical Systems (MEMS) sensors have developed rapidly in the last decade, increasing the need of Failure Analysis (FA) to characterize abnormalities and to identify failure modes of various types of MEMS devices. One of the greatest challenges is removal of the sealing cap from the MEMS device without any impact to the moveable sensing elements. A novel non-destructive technique has been successfully developed using KOH wet chemical etching followed by application of ex-situ hand sticking to deprocess the sealing cap from an accelerometer device. This new approach provides a quick and reliable way to remove the sealing cap from a MEMS device.


Author(s):  
W.Y. Cheng ◽  
T.Y. Chiu ◽  
Jon C. Lee ◽  
J.Y. Chiou

Abstract Emission microscopy have been used for failure analysis (FA) defect isolation. But for advanced products, the working voltage of chip is getting smaller, thus many emission spots from normal transistors will be observed, which indeed affects the judgment on the emission spots from killer defects and increases the FA difficulty. Laser scanning microscope (LSM)-based techniques have been powerful defect isolation methods for many years. In this study, Checkpoint Infrascan 200TD, a laser-based tool, is used to perform defect localization. Here, thermally induced voltage alteration and optical beam induced resistance change are used to get defect locations. The study demonstrates three FA cases with 80nm/90nm technologies; metal direct short, poly leakage, and contact high resistance are also found in these cases. It is concluded that, by the selection of control parameters, Infrascan 200TD provides several capabilities of failure site localization and can be applied to different failure modes.


Author(s):  
Mary A. Miller ◽  
Paiboon Tangyunyong ◽  
Edward I. Cole ◽  
Alejandro Pimentel ◽  
Darlene M. Udoni

Abstract This paper presents two different case studies that highlight the use of reflected light imaging in laser scanning microscopy. In the first case study, the exact location of defects in metal comb test structures were much easier to detect with reflected light imaging than with thermally-induced voltage alteration (TIVA). This case study also shows visible-wavelength TIVA defect localization using a 532-nm laser. A comparison between 532-nm TIVA and conventional 1320-nm TIVA is made to show the resolution improvement with the visible laser. In the second case study, the cause of a linear string of bit failures was localized easily with backside reflected light imaging. It is observed that the indicated sites matched the light-induced voltage alteration signals and the failing cells in the bit map. In both of the case studies, the reflected light images have proved very helpful in the localization and characterization of failing devices or test structures.


Author(s):  
Srikanth Perungulam ◽  
Albert Gleason

Abstract This paper outlines some of the optical and e-beam based techniques that can be used to isolate via chain failures. The Scanning electron microscope based techniques discussed are Passive Voltage Contrast (PVC) and Substrate Current Imaging (SCI). The optical beam technique discussed is Thermally Induced Voltage Alteration (TIVA) on the Laser Scanning Microscope. A combination of these techniques can be used to effectively analyze all types of via chain failures.


2003 ◽  
Vol 795 ◽  
Author(s):  
Lianchao Sun ◽  
Ping Hou

ABSTRACTControl of the film stress and optical property has long been considered as an issue in the tunable optical MEMS (Micro-Electro-Mechanical Systems) devices. In this paper, the atmospheric evolution of Titanium Dioxide (TiO2) and Silicon Dioxide (SiO2) thin films for the optical MEMS devices were studied. These films were prepared by ion-assisted e-beam evaporation. It is found that as-deposited SiO2 films exhibit compressive stress; whereas, it is tensile in the TiO2 films under present processing conditions. When annealed at 150 °C, both SiO2 and TiO2 films show slight changes in stress with annealing time. However, increasing the anneal temperature to 250°C caused an apparent change of film stresses with time, in which SiO2 film turns into less compressive and TiO2 film appears to be more tensile. The optical properties after annealing were also investigated by measuring the thickness and the refractive index changes using the spectroscopic ellipsometry technique. At both experimental temperatures, the film thickness increases slightly and the refractive index at 1550 nm decreases a little at the initial annealing stage for SiO2 films. For TiO2 films, it is found that the refractive index increases after annealing at 250°C. This might be caused by the TiO2 film densification process during amorphous-to-crystalline phase transformation. Because most of the significant film evolutions occur during the initial 12 hours of annealing, a practical way of stabilizing the film properties in a MEMS device is to pre-anneal the as-deposited thin films.


2014 ◽  
Vol 68 (5) ◽  
pp. 629-641 ◽  
Author(s):  
Tatjana Djakov ◽  
Ivanka Popovic ◽  
Ljubinka Rajakovic

Micro-electro-mechanical systems (MEMS) are miniturized devices that can sense the environment, process and analyze information, and respond with a variety of mechanical and electrical actuators. MEMS consists of mechanical elements, sensors, actuators, electrical and electronics devices on a common silicon substrate. Micro-electro-mechanical systems are becoming a vital technology for modern society. Some of the advantages of MEMS devices are: very small size, very low power consumption, low cost, easy to integrate into systems or modify, small thermal constant, high resistance to vibration, shock and radiation, batch fabricated in large arrays, improved thermal expansion tolerance. MEMS technology is increasingly penetrating into our lives and improving quality of life, similar to what we experienced in the microelectronics revolution. Commercial opportunities for MEMS are rapidly growing in broad application areas, including biomedical, telecommunication, security, entertainment, aerospace, and more in both the consumer and industrial sectors on a global scale. As a breakthrough technology, MEMS is building synergy between previously unrelated fields such as biology and microelectronics. Many new MEMS and nanotechnology applications will emerge, expanding beyond that which is currently identified or known. MEMS are definitely technology for 21st century.


2010 ◽  
Vol 4 (2) ◽  
pp. 110-116 ◽  
Author(s):  
Kiwamu Ashida ◽  
◽  
Shizuka Nakano ◽  
Jaehyuk Park ◽  
Jun Akedo

Many micro-scale devices have been developed by applying micro-electro-mechanical systems (MEMS) technology, but MEMS production facilities are large and costly, making it difficult to develop small numbers of trial devices. The novel on-demand MEMS device production system we developed applies two major concepts – that of the microfactory and the introduction of non-MEMS processes in microfabrication. These two concepts have made manufacturing more ecological, economical, agile, and flexible through downsizing, forming an automated production line by connecting standardized unit-processing cells, each of which has a desktop process, a part transfer robot, and a standardized connection interface. These enable any process cell to be connected in any sequence that the target product requires. Four unit-process cells were developed – the micropress cell for fabricating microstructures from thin sheet metal and the miniature aerosol deposition (AD) process cell for fabricating high-performance piezoelectric (PZT) ceramics actuators. The feasibility of the on-demand MEMS production system was demonstrated by the fabrication of a MEMS-like micromirror scanner, proving the potential of on-demand MEMS production in diversified small-lot production.


Author(s):  
Huifen Wei ◽  
Wenping Geng ◽  
Kaixi Bi ◽  
Tao Li ◽  
Xiangmeng Li ◽  
...  

Abstract LiNbO3 (LN)-based micro-electro-mechanical systems (MEMS) vibration sensors exhibit giant prospection in extreme environments, where exist a great amount of irradiation. However, to the best of our knowledge, it is still unknown whether the irradiation affects the performance of LN-based piezoelectric MEMS sensors. Based on this consideration, it is necessary to model the irradiation environment to investigate the effect of high dosage irradiation on LN-based vibration sensors. Firstly, the theoretical work is done to study the Compton Effect on the Gamma-ray irradiation with Co-60 source. After irradiation, X-ray diffraction (XRD) characterization was performed to verify the effect of irradiation on the crystalline of LN thin film. Meanwhile, the performances of output voltages on the five MEMS devices under various dosage of irradiation are compared. As a result, a neglected shift of 0.02 degrees was observed from the XRD image only under maximum irradiation dosage of 100 Mrad(Si). Moreover, the output voltages of cantilever-beam vibration sensors decrease by 3.1%. Therefore, it is verified that the γ-ray irradiation has very little influence on the LN-based MEMS vibration sensors, which have great attraction on the materials and sensors under high-dose irradiation.


Author(s):  
Timothy Moulton ◽  
G. K. Ananthasuresh

Abstract There exists a need to stabilize the electrostatic actuation commonly used in Micro-Electro-Mechanical Systems (MEMS). Most electrostatically actuated MEMS devices act as variable capacitors with varying gap between the charged conductors. Electrostatic force in these devices is a nonlinear attractive force between the conductors resulting in a complex dynamic system. These systems are stable for only a small portion of the initial gap. In this paper a design method is presented for electrostatic micro-mirrors with improved stability. Controllable, stable electrostatic actuation can be achieved through surface contact between the two conductors. Once in contact with the surface, the compliance of the structure is used to stabilize the electrostatic actuation over a long range of motion. Beam based variable angle mirrors were designed and fabricated using the Multi-User MEMS Process at MCNC technology center. The design methods for stable electrostatic actuation were tested on these mirrors. Some characteristics are noted and their implementation into future designs is discussed.


Author(s):  
Anis Nurashikin Nordin

Today’s high-tech consumer market demand complex, portable personal wireless consumer devices that are low-cost and have small sizes. Creative methods of combining mature integrated circuit (IC) fabrication techniques with innovative radio-frequency micro-electro-mechanical systems (RF-MEMS) devices has given birth to wireless transceiver components, which operate at higher frequencies but are manufactured at the low-cost of standard ICs. Oscillators, RF bandpass filters, and low noise amplifiers are the most critical and important modules of any wireless transceiver. Their individual characteristics determine the overall performance of a transceiver. This chapter illustrates RF-oscillators that utilize MEMS devices such as resonators, varactors, and inductors for frequency generation. Emphasis will be given on state of the art RF-MEMS components such as film bulk acoustic wave, surface acoustic wave, flexural mode resonators, lateral and vertical varactors, and solenoid and planar inductors. The advantages and disadvantages of each device structure are described, with reference to the most recent work published in the field.


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