Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits

2011 ◽  
Author(s):  
A. Yurt ◽  
E. Ramsay ◽  
F. H. Köklü ◽  
M. S. Ünlü ◽  
B. B. Goldberg
Keyword(s):  
Integrated Circuits ◽  
Optical Design ◽  
Photon Emission ◽  
Chromatic Aberration ◽  
Oxide Semiconductor ◽  
Objective Lens ◽  
Back Side ◽  
Solid Immersion Lens ◽  
Spectral Window ◽  
Emission Microscopy

Abstract We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrate that the chromatic aberration due to material dispersion of aplanatic silicon solid immersion lenses can be reduced by more than an order of magnitude in the spectral window 1.5µm-2.1µm, providing new diffraction limited performance. On-axis and off-axis imaging performance of the proposed optical design is evaluated.

Application of Advanced Back-Side Optical Techniques in ASICs

2013 ◽  
Vol 21 (3) ◽  
pp. 30-35
Author(s):  
Douglas Martin ◽  
Samuel Beilin ◽  
Brett Hamilton ◽  
Darin York ◽  
Philip Baker ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Photon Emission ◽  
Back Side ◽  
Voltage Imaging ◽  
Root Cause ◽  
Silicon Transistors ◽  
Cause Of Failure ◽  
Metal Interconnects ◽  
Application Specific

Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Systematic EFA Approach in Locating Floating Nodes in Analog Mixed Signal Devices

2011 ◽  
Author(s):  
Sagar Karki
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Timely Manner ◽  
Critical Step ◽  
Isolation Techniques ◽  
Emission Microscopy ◽  
Digital Circuitry

Abstract With advancements in technology, it is nearly impossible to find the defects in integrated circuits without applying appropriate failure isolation techniques. Failure isolation is a critical step in identifying the physical defect on integrated circuits. This paper addresses the challenges imposed by floating node conditions on both analog and digital circuitry, and a case study for each circuit type is presented. Different approaches along with the challenges involved in isolating each case in a very timely manner are addressed. Finally, the usefulness of global isolation tools, such as PEM (Photon Emission Microscopy), FIB (Focused Ion Beam), and micro-probing, is also discussed.

Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy

1999 ◽  
Author(s):  
Soon Lim ◽  
Jian Hua Bi ◽  
Lian Choo Goh ◽  
Soh Ping Neo ◽  
Sudhindra Tatti
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Photon Emission ◽  
Fault Isolation ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Emission Microscopy ◽  
On Chip

Abstract The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.

Design of objective lens for 200-kV high-resolution electron microscopes

1983 ◽  
Vol 41 ◽  
pp. 314-315
Author(s):  
K. Tsuno ◽  
T. Honda ◽  
Y. Harada ◽  
M. Naruse
Keyword(s):  
Optical Properties ◽  
Computer Technology ◽  
Axial Magnetic Field ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Resolution Electron ◽  
Correction Of Astigmatism ◽  
Three Stages ◽  
Electron Microscopes ◽  
Stage 1

Developement of computer technology provides much improvements on electron microscopy, such as simulation of images, reconstruction of images and automatic controll of microscopes (auto-focussing and auto-correction of astigmatism) and design of electron microscope lenses by using a finite element method (FEM). In this investigation, procedures for simulating the optical properties of objective lenses of HREM and the characteristics of the new lens for HREM at 200 kV are described.The process for designing the objective lens is divided into three stages. Stage 1 is the process for estimating the optical properties of the lens. Firstly, calculation by FEM is made for simulating the axial magnetic field distributions Bzc of the lens. Secondly, electron ray trajectory is numerically calculated by using Bzc. And lastly, using Bzc and ray trajectory, spherical and chromatic aberration coefficients Cs and Cc are numerically calculated. Above calculations are repeated by changing the shape of lens until! to find an optimum aberration coefficients.

Observability of Very Thick Specimen by Using Transmission Scanning Electron Microscope

1971 ◽  
Vol 29 ◽  
pp. 26-27
Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike
Keyword(s):  
Electron Microscope ◽  
Image Quality ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Image Contrast ◽  
Objective Lens ◽  
Thick Specimen ◽  
Transmission Electron ◽  
Scanning Electron

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.

Electronic Cone Illumination with the Conventional Transmission Electron Microscope

1977 ◽  
Vol 35 ◽  
pp. 72-73
Author(s):  
William Krakow
Keyword(s):  
Electronic Device ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Lissajous Figures ◽  
High Resolution Images ◽  
Imaging Mode ◽  
Diffraction Patterns ◽  
Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

The Reduction of Chromatic Aberrations Due to Instrumental Instabilities

1971 ◽  
Vol 29 ◽  
pp. 14-15
Author(s):  
J. S. Lally ◽  
R. Evans
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Focal Length ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Usual Practice ◽  
Voltage Electron ◽  
Short Focal Length ◽  
Chromatic Aberrations ◽  
Electron Microscopes

One of the instrumental factors often limiting the resolution of the electron microscope is image defocussing due to changes in accelerating voltage or objective lens current. This factor is particularly important in high voltage electron microscopes both because of the higher voltages and lens currents required but also because of the inherently longer focal lengths, i.e. 6 mm in contrast to 1.5-2.2 mm for modern short focal length objectives.The usual practice in commercial electron microscopes is to design separately stabilized accelerating voltage and lens supplies. In this case chromatic aberration in the image is caused by the random and independent fluctuations of both the high voltage and objective lens current.

Resolution of a Transmitted Electron Image Formed by A Scanning Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 386-387
Author(s):  
S. Takashima ◽  
H. Hashimoto ◽  
S. Kimoto
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Probe Diameter ◽  
Transmission Electron ◽  
Electron Image ◽  
Conventional Transmission Electron Microscope ◽  
Scanning Electron

The resolution of a conventional transmission electron microscope (TEM) deteriorates as the specimen thickness increases, because chromatic aberration of the objective lens is caused by the energy loss of electrons). In the case of a scanning electron microscope (SEM), chromatic aberration does not exist as the restrictive factor for the resolution of the transmitted electron image, for the SEM has no imageforming lens. It is not sure, however, that the equal resolution to the probe diameter can be obtained in the case of a thick specimen. To study the relation between the specimen thickness and the resolution of the trans-mitted electron image obtained by the SEM, the following experiment was carried out.

Sign in / Sign up

Export Citation Format

Share Document