Chromatic and spherical aberration correction for silicon aplanatic solid immersion lens for fault isolation and photon emission microscopy of integrated circuits

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1637-1639 ◽  
Author(s):  
B.B. Goldberg ◽  
A. Yurt ◽  
Y. Lu ◽  
E. Ramsay ◽  
F.H. Köklü ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Spherical Aberration ◽  
Photon Emission ◽  
Fault Isolation ◽  
Aberration Correction ◽  
Solid Immersion Lens ◽  
Emission Microscopy

Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy

1999 ◽  
Author(s):  
Soon Lim ◽  
Jian Hua Bi ◽  
Lian Choo Goh ◽  
Soh Ping Neo ◽  
Sudhindra Tatti
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Photon Emission ◽  
Fault Isolation ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Emission Microscopy ◽  
On Chip

Abstract The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.

Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits

2011 ◽  
Author(s):  
A. Yurt ◽  
E. Ramsay ◽  
F. H. Köklü ◽  
M. S. Ünlü ◽  
B. B. Goldberg
Keyword(s):  
Integrated Circuits ◽  
Optical Design ◽  
Photon Emission ◽  
Chromatic Aberration ◽  
Oxide Semiconductor ◽  
Objective Lens ◽  
Back Side ◽  
Solid Immersion Lens ◽  
Spectral Window ◽  
Emission Microscopy

Abstract We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrate that the chromatic aberration due to material dispersion of aplanatic silicon solid immersion lenses can be reduced by more than an order of magnitude in the spectral window 1.5µm-2.1µm, providing new diffraction limited performance. On-axis and off-axis imaging performance of the proposed optical design is evaluated.

Spherical aberration correction in aplanatic solid immersion lens imaging using a MEMS deformable mirror

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2120-2122 ◽  
Author(s):  
Y. Lu ◽  
E. Ramsay ◽  
C.R. Stockbridge ◽  
A. Yurt ◽  
F.H. Köklü ◽  
...  
Keyword(s):  
Spherical Aberration ◽  
Deformable Mirror ◽  
Aberration Correction ◽  
Solid Immersion Lens

Debug and Fault Isolation of an RF/IF Circuit for 3G Cellular Applications With High Leakage: A Case Study

2002 ◽  
Author(s):  
Syd Wilson ◽  
Manoj Nair ◽  
Michael Vicker ◽  
Richard B. Meador ◽  
George Smoot ◽  
...  
Keyword(s):  
Leakage Current ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Cost Effective ◽  
Fault Isolation ◽  
Cellular Phones ◽  
Third Generation ◽  
Mixed Signal ◽  
Emission Microscopy

Abstract First silicon of a cost effective, BICMOS mixed signal RF/IF integrated circuit (IC) for third generation (3G) cellular phones showed high leakage current on the analog receive supply pins in “battery save” mode. Our tasks were to identify and isolate the source of leakage and to fix the design. Alternate debug techniques were used to isolate the cause of the leakage and provide a solution after inconclusive results were obtained using photon emission microscopy,(1) and infrared microthermography techniques.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Scanning SQUID Microscopy for Die Level Fault Isolation

2002 ◽  
Author(s):  
David P. Vallett
Keyword(s):  
Liquid Crystal ◽  
Photon Emission ◽  
Fault Isolation ◽  
Induced Voltage ◽  
Sem Images ◽  
Thermal Mapping ◽  
Localized Defects ◽  
Emission Microscopy ◽  
Scanning Squid ◽  
Scanning Squid Microscopy

Abstract This paper presents detailed results of scanning SQUID microscopy (SSM) analyses performed on the frontside and backside of both loose and packaged die. Optical and SEM images of localized defects are shown. Comparisons with alternative physical fault isolation (PFI) techniques like liquid crystal (LC), Schlieren thermal mapping (STM), temperature induced voltage alteration (TIVA), and photon emission microscopy (PEM) are included. Finally, limitations with and potential improvements for die level SSM are also discussed.

Photoemission and OBIRCH Analysis with Solid Immersion Lens (SIL)

2003 ◽  
Author(s):  
Ikuo Arata ◽  
Shigeru Sakamoto ◽  
Yoshiyuki Yokoyama ◽  
Hirotoshi Terada
Keyword(s):  
Gallium Phosphide ◽  
Laser Scanning ◽  
Image Intensifier ◽  
Ccd Camera ◽  
Fault Isolation ◽  
Solid Immersion Lens ◽  
Resistance Change ◽  
Isolation Techniques ◽  
Emission Microscopy ◽  
Cooled Ccd

Abstract SIL(Solid Immersion Lens) is well investigated for optical pickup application because of its capability of high resolution. We applied this technique to microscopy, especially for precise observation of semiconductors. And also we applied it to fault isolation techniques like emission microscopy , OBIRCH(Optical Beam Induced Resistance Change) and TIVA,SEI. We found significant enhancement of resolution and sensitvity by using SIL. Applying this technique to emission microscopy, we should be aware of optical absorption charactristics of SIL lens materials. We investigated proper SIL lens materials for emission microscopy and laser scanning applications, and checked performance of Si(Silicon)-SIL and GaP(Gallium phosphide)-SIL. We also compared combinations of some kinds of SILs and detectors like C-CCD(cooled CCD) camera, MCT(HgCdTe) camera and position sensitive detector with InGaAs photo cathode II(image intensifier).

Systematic EFA Approach in Locating Floating Nodes in Analog Mixed Signal Devices

2011 ◽  
Author(s):  
Sagar Karki
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Timely Manner ◽  
Critical Step ◽  
Isolation Techniques ◽  
Emission Microscopy ◽  
Digital Circuitry

Abstract With advancements in technology, it is nearly impossible to find the defects in integrated circuits without applying appropriate failure isolation techniques. Failure isolation is a critical step in identifying the physical defect on integrated circuits. This paper addresses the challenges imposed by floating node conditions on both analog and digital circuitry, and a case study for each circuit type is presented. Different approaches along with the challenges involved in isolating each case in a very timely manner are addressed. Finally, the usefulness of global isolation tools, such as PEM (Photon Emission Microscopy), FIB (Focused Ion Beam), and micro-probing, is also discussed.

Application of PEM and OBIRCH to Defect Localization of Integrated Circuits

2014 ◽  
Vol 904 ◽  
pp. 277-281
Author(s):  
Jian Wen Lian ◽  
Xiao Ling Lin ◽  
Ruo He Yao
Keyword(s):  
Integrated Circuits ◽  
Failure Mechanisms ◽  
Photon Emission ◽  
Fault Isolation ◽  
Resistance Change ◽  
Microelectronic Devices ◽  
Application Condition ◽  
Defect Localization ◽  
Metal Interconnects ◽  
Fault Characterization

With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects; OBIRCH as a complementary, has a high success rate for locating resistance defects. Two cases with failure mechanisms illuminated are presented to show the different application of PEM and OBIRCH.

Thermal Failure Analysis of Functional Failures by IR Lock-in Thermal Emission

2019 ◽  
Author(s):  
Paul Hubert P. Llamera ◽  
Camille Joyce G. Garcia-Awitan
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Near Infrared ◽  
Thermal Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
Distinct Advantage ◽  
Infra Red ◽  
Emission Microscopy ◽  
Lock In

Abstract Lock-in thermography (LIT), known as a powerful nondestructive fault localization technique, can also be used for microscopic failure analysis of integrated circuits (ICs). The dynamic characteristic of LIT in terms of measurement, imaging and sensitivity, is a distinct advantage compared to other thermal fault localization methods as well as other fault isolation techniques like emission microscopy. In this study, LIT is utilized for failure localization of units exhibiting functional failure. Results showed that LIT was able to point defects with emissions in the mid-wave infra-red (MWIR) range that Photo Emission Microscopy (PEM) with near infrared (NIR) to short- wave infra-red (SWIR) detection wavelength sensitivity cannot to detect.

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