Nanoprobing as an Essential and Fast Methodology in Identification of Failure’s Root Cause for Advanced Technology

2013 ◽  
Author(s):  
Yinzhe Ma ◽  
Chong Khiam Oh ◽  
Ohnmar Nyi ◽  
Chuan Zhang ◽  
Donald Nedeau ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Turnaround Time ◽  
Advanced Technology ◽  
Electrical Behavior ◽  
Root Cause ◽  
Front End

Abstract This paper highlights the use of nanoprobing as a crucial and fast methodology for failure analysis (FA) in sub 20nm with an improved semi-auto nanoprobing system. Nanoprobing has the capability to localize as well as characterize the electrical behavior of the malfunctioning device for a better understanding of the failure mechanism. It provides a valuable guide to choose a proper physical FA technique to identify the root cause of the failure. This established methodology helps to accelerate the FA turnaround time and improve the success rate. Its application to a few of the front end of line and one back end of line issues is highlighted in the paper.

Single Device Characterization by Nano-probing to Identify Failure Root Cause

2005 ◽  
Author(s):  
Chao-Chi Wu ◽  
Jon C. Lee ◽  
Jung-Hsiang Chuang ◽  
Tsung-Te Li
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Fault Isolation ◽  
Device Characterization ◽  
Nano Technology ◽  
Analysis Techniques ◽  
Root Cause ◽  
Visual Defects ◽  
Lower Success Rate

Abstract In general failure analysis cases, a less invasive fault isolation approach can be utilized to resolve a visual root cause defect. In the case of nano technology, visual defects are not readily resolved, due to an increase in non-visible defects. The nonvisible defects result in a lower success rate since conventional FA methods/tools are not efficient in identifying the failure root cause. For the advanced nanometer process, this phenomenon is becoming more common; therefore the utilization of advanced techniques are required to get more evidence to resolve the failure mechanism. The use of nanoprobe technology enables advanced device characterization h order to obtain more clues to the possible failure mechanism before utilizing the traditional physical failure analysis techniques.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Advancement in Data Engineering and Feature Processing Workflow by Using Deep Learning Techniques for the Automation of ESP Failure Root Cause Analyses

2021 ◽  
Author(s):  
Saniya Karnik ◽  
Navya Yenuganti ◽  
Bonang Firmansyah Jusri ◽  
Supriya Gupta ◽  
Prasanna Nirgudkar ◽  
...  
Keyword(s):  
Deep Learning ◽  
Failure Analysis ◽  
Language Processing ◽  
Turnaround Time ◽  
Process Efficiency ◽  
Root Cause ◽  
Feature Processing ◽  
Learning Techniques ◽  
Electrical Submersible Pump ◽  
Root Cause Identification

Abstract Today, Electrical Submersible Pump (ESP) failure analysis is a tedious, human-intensive, and time-consuming activity involving dismantle, inspection, and failure analysis (DIFA) for each failure. This paper presents a novel artificial intelligence workflow using an ensemble of machine learning (ML) algorithms coupled with natural language processing (NLP) and deep learning (DL). The algorithms outlined in this paper bring together structured and unstructured data across equipment, production, operations, and failure reports to automate root cause identification and analysis post breakdown. This process will result in reduced turnaround time (TAT) and human effort thus drastically improving process efficiency.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Application of B-Scan SAT Mode, an Acoustic Cross Section Technique to Analyze Packaged Components beyond Delamination

2020 ◽  
Author(s):  
Srinath Rajaram ◽  
Denise Barrientos ◽  
Nadia Ahmad ◽  
Robert Carpenter ◽  
Eric Barbian
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Turnaround Time ◽  
Destructive Testing ◽  
Cross Sectional ◽  
Root Cause ◽  
Section Technique ◽  
Customer Returns ◽  
Tomography Method ◽  
Non Destructive

Abstract Failure Analysis labs involved in customer returns always face a greater challenge, demand from customer for a faster turnaround time to identify the root cause of the failure. Unfortunately, root cause identification in failure analysis is often performed incompletely or rushing into destructive techniques, leading to poor understanding of the failure mechanism and root-cause, customer dissatisfaction. Scanning Acoustic Tomography (SAT), also called Scanning Acoustic Microscope (SAM) has been adopted by several Failure Analysis labs because it provides reliable non-destructive imaging of package cracks and delamination. The SAM is a vital tool in the effort to analyze molded packages. This paper provides a review of non-destructive testing method used to evaluate Integrated Circuit (IC) package. The case studies discussed in this paper identifies different types of defects and the capabilities of B-Scan (cross-sectional tomography) method employed for defect detection beyond delamination.

Failure Analysis Methodology on Systematic Missing Cu in RAM Due to Cu CMP

2014 ◽  
Author(s):  
Ghim Boon Ang ◽  
Changqing Chen ◽  
Hui Peng Ng ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Removal Rate ◽  
Deep Dive ◽  
The Real ◽  
Root Cause ◽  
Analysis Methodology ◽  
Strong Emphasis ◽  
Cu Cmp

Abstract This paper places a strong emphasis on the importance of applying Systematic Problem Solving approach and use of appropriate FA methods and tools to understand the “real” failure root cause. A case of wafer center cluster RAM fail due to systematic missing Cu was studied. It was through a strong “inquisitive” mindset coupled with deep dive problem solving that lead to uncover the actual root cause of large Cu voids. The missing Cu was due to large Cu void induced by galvanic effects from the faster removal rate during Cu CMP and subsequently resulted in missing Cu. This highlights that the FA analyst’s mission is not simply to find defects but also play a catalyst role in root cause/failure mechanism understanding by providing supporting FA evidence (electrically/ physically) to Fab.

Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

2013 ◽  
Author(s):  
S.K. Loh ◽  
C.Q. Chen ◽  
K.H. Yip ◽  
A.C.T. Quah ◽  
X. Tao ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Static Analysis ◽  
Electrical Behavior ◽  
Functional Failure ◽  
Bipolar Junction Transistor ◽  
Root Cause ◽  
Soft Failure ◽  
Junction Transistor ◽  
Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

Humidity-Bias Driven Shorts in Multilayer Circuits: A Case Study in Failure Analysis

2000 ◽  
Author(s):  
Hei-Ruey Harry Jen ◽  
Gerald S. D’Urso ◽  
Harold Andrews
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Layer Structure ◽  
Molding Compound ◽  
Plastic Molding ◽  
Root Cause ◽  
Plastic Package ◽  
Processing Procedure ◽  
Failure Site

Abstract When a failure analysis (FA) involves a multiple layer structure separated by a polymeric material such as Benzocyclobutene (BCB), in a plastic package, it becomes a very challenging task to find out where the failure site is and how it failed. This is due to the fact that the chemical de-processing procedure removes BCB as well as the plastic molding compound. This paper outlines the studies carried out to determine the failure site and the root cause of the failure mechanism in a multilayer circuit and the steps taken to fix the problems. The methodology and results of this study are applicable to many other types of circuits.

Failure Analysis Methodology on Systematic Defect in ADC_PLL Ring Pattern Due to Plasma De-Chuck Process

2010 ◽  
Author(s):  
Ang Ghim Boon ◽  
Chen Changqing ◽  
Alfred Quah ◽  
Magdeliza ◽  
Indahwan Jony ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Root Cause ◽  
Path Tracing ◽  
Analysis Methodology ◽  
Wafer Fab ◽  
Problem Solving Process

Abstract In this paper, a low yield case relating to a systematic array of failures in a ring pattern due to ADC_PLL failures on low yielding wafers will be studied. A systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current imaging, layout path tracing, PVC and XTEM together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical in a wafer foundry in which there is minimal available data on the test condition setup to duplicate the exact failure. The ring pattern was due to systematically open via as a result of polymer built-up from plasma de-chuck issue. It would serve as a good reference for a wafer Fab that encounters such an issue.

Failure Mechanism Studies and Root Cause Identification of Nonstick on Pad on Microchip Al Bondpads

2014 ◽  
Author(s):  
Hua Younan ◽  
Zhou Yongkai ◽  
Chen Yixin ◽  
Fu Chao ◽  
Li Xiaomin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Wafer Fabrication ◽  
Assembly Process ◽  
Root Cause ◽  
Barrier Metal ◽  
Root Cause Identification ◽  
Induced Defects

Abstract It is well-known that underetch material, contamination, particle, pinholes and corrosion-induced defects on microchip Al bondpads will cause non-stick on pads (NSOP) issues. In this paper, the authors will further study NSOP problem and introduce one more NSOP failure mechanism due to Cu diffusion caused by poor Ta barrier metal. Based on our failure analysis results, the NSOP issue was not due to the assembly process, but due to the wafer fabrication. The failure mechanism might be that the barrier metal Ta was with pinholes, which caused Cu diffused out to the top Al layer, and then formed the “Bump-like” Cu defects and resulted in NSOP on Al bondpads during assembly process.

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