Silicon Dislocation Enhanced by Dynamic Voltage Stress

2007 ◽  
Author(s):  
Yu-Cheng Lin ◽  
Rock Chen ◽  
Sanan Liang ◽  
Scott Liao ◽  
Chorng Niou ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Substrate ◽  
Reliability Test ◽  
Final Test ◽  
Functional Failure ◽  
Root Cause ◽  
Voltage Stress ◽  
Dynamic Voltage ◽  
Lightly Doped Drain ◽  
The Relationship

Abstract In reliability test some chips suffered functional failure. Through a series of failure analysis experiments, the root cause was determined to be a silicon dislocation across LDD (Lightly Doped Drain) area causing p-n junction leakage. However, those failed samples all passed both CP (Chip Probe) and FT (Final Test) monitor. Therefore, it is reasonable to suspect that DVS (dynamic voltage stress) may enhance minor dislocations already existing before CP and FT. To prove this hypothesis, an experiment was designed to find the relationship between DVS and the depth of dislocation in silicon substrate. In conclusion, DVS could enhance dislocation across LDD area, which may induce reliability failure. Moreover, reliability concerns on this finding will be discussed in this paper.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Metal Slice Defect Induced Package Level Reliability Failure

2006 ◽  
Author(s):  
Mark Zhang ◽  
Scott Liao ◽  
Sanan Liang ◽  
Ricky Lou ◽  
Rock Chen ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Reliability Test ◽  
Root Cause ◽  
Corrective Actions ◽  
Test Failure

Abstract In this paper, a case of package level reliability test failure was studied. A model of “Slice Defect”, which was identified as the root cause by failure analysis, is introduced. Experiment results are presented to approve that such model is in fact correct and the corrective actions are effective.

Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

2013 ◽  
Author(s):  
S.K. Loh ◽  
C.Q. Chen ◽  
K.H. Yip ◽  
A.C.T. Quah ◽  
X. Tao ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Static Analysis ◽  
Electrical Behavior ◽  
Functional Failure ◽  
Bipolar Junction Transistor ◽  
Root Cause ◽  
Soft Failure ◽  
Junction Transistor ◽  
Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices

1997 ◽  
Author(s):  
K. H. Parekh ◽  
R. Milburn
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Photon Emission ◽  
Reliability Test ◽  
Input Output ◽  
End User ◽  
Final Test ◽  
Leakage Currents ◽  
Emission Microscopy ◽  
Scanning Electron

Abstract In the last several years emission microscopy has become an essential tool for failure analysis, specifically for VLSI devices. This paper describes various die related failure mechanisms in CMOS ASIC devices which were detected by emission microscopy. The failure analysis results discussed in this paper are primarily of the devices which were analyzed over the period of the last three years, 1994 - 1996. These devices were from a broad spectrum of final test failures, qualification and reliability test failures, special evaluation failures, testing and assembly failures at customer sites, and end user field failures. In addition to the failure mechanism statistic scanning electron micrographic illustrations of some of the failure mechanisms and associated damage are presented in this paper. The data presented in this paper clearly show the effectiveness of photon emission microscopy. The value of emission microscopy really lies in quick detection of failure locations on the die which failed functionally or due to excessive static IOD, functional IOD, or input/output leakage currents. It has certainly impacted tum around time of the analysis as significant reduction in analysis time has been achieved. In some cases same day turn around was possible.

Fast Root Cause Identification Using Combination of Failure Analysis and In-Line Inspection

2017 ◽  
Author(s):  
Zhigang Song ◽  
Weihao Weng ◽  
Brett Engel
Keyword(s):  
Failure Analysis ◽  
Process Development ◽  
Second Step ◽  
Line Defect ◽  
Semiconductor Technology ◽  
Process Step ◽  
Root Cause ◽  
The Past ◽  
Root Cause Identification ◽  
The Relationship

Abstract Failure analysis plays an important role in yield improvement during semiconductor process development and device manufacturing. It includes two main steps. The first step is to find the defect and the second step is to identify the root cause. In the past, failure analysis mainly focused on the first step, namely how to find the defect for a failure; because in the previous generations of technology, once the defect was found, its root cause was relatively easy to be understood. As the current advanced semiconductor technology has become tremendously complicated, especially 3D devices, like FinFET, a defect found by failure analysis can be substantially transformed from its original defect by subsequent processes and can be totally different from its origin in size and shape. Thus, sometimes, the second step, identifying the root cause for a defect becomes more challenging and takes more time than the first step. With combination of failure analysis and inline inspection, it enables us to establish the relationship between the failure analysis defect and an in-line defect. This can link the defect for a device functional failure to its source layer and process step more quickly, leading to fast root cause identification. In this paper, the methodology was validated by fast identification of the root causes for three case studies in the latest FinFET technology.

Persepsi Dan Partisipasi Pengunjung Terhadap Permasalahan Sampah Laut (Marine Debris) Di Pantai Temberan Kabupaten Bangka Dan Pantai Pasir Padi Pangkalpinang

2020 ◽  
Vol 3 (1) ◽  
pp. 11-20
Author(s):  
Siska Oktavia ◽  
Wahyu Adi ◽  
Aditya Pamungkas
Keyword(s):  
Data Collection ◽  
Random Sampling ◽  
Sampling Technique ◽  
Marine Debris ◽  
Reliability Test ◽  
Validity Test ◽  
Data Collection Technique ◽  
Mixed Approach ◽  
Relationship Of ◽  
The Relationship

This study aims to analyze the value of the density of marine debris, perceptions and participation in Temberan beach and Pasir Padi beach, as well as determine the relationship of perception and participation to the density of marine debris. This research is a type of research that is descriptive with a mixed approach (quantitative and qualitative). The study was conducted at Temberan beach in Bangka Regency and Pasir Pasir Beach Pangkal Pinang in October 2019. The sampling technique used was random sampling and purposive sampling. The data collection technique was carried out using observation technique namely sampling and questionnaire. The validity test uses the Pearson Product Moment formula and the reliability test uses the Cronbach’s Alpha formula. The results showed that the density of debris in the Temberan beach was more dominant at 10.92 pieces/meter2, while at Temberan beach 3 pieces/meter2. The results of perception and participation are different, with the Temberan beach occupying more complex waste problems. The relationship of perception and participation in the density of marine debris have a relationship that affects each other.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication

2009 ◽  
Author(s):  
Hua Younan ◽  
Chu Susan ◽  
Gui Dong ◽  
Mo Zhiqiang ◽  
Xing Zhenxiang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Root Cause ◽  
Gate Oxide Integrity

Abstract As device feature size continues to shrink, the reducing gate oxide thickness puts more stringent requirements on gate dielectric quality in terms of defect density and contamination concentration. As a result, analyzing gate oxide integrity and dielectric breakdown failures during wafer fabrication becomes more difficult. Using a traditional FA flow and methods some defects were observed after electrical fault isolation using emission microscopic tools such as EMMI and TIVA. Even with some success with conventional FA the root cause was unclear. In this paper, we will propose an analysis flow for GOI failures to improve FA’s success rate. In this new proposed flow both a chemical method, Wright Etch, and SIMS analysis techniques are employed to identify root cause of the GOI failures after EFA fault isolation. In general, the shape of the defect might provide information as to the root cause of the GOI failure, whether related to PID or contamination. However, Wright Etch results are inadequate to answer the questions of whether the failure is caused by contamination or not. If there is a contaminate another technique is required to determine what the contaminant is and where it comes from. If the failure is confirmed to be due to contamination, SIMS is used to further determine the contamination source at the ppm-ppb level. In this paper, a real case of GOI failure will be discussed and presented. Using the new failure analysis flow, the root cause was identified to be iron contamination introduced from a worn out part made of stainless steel.

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

1998 ◽  
Author(s):  
D.S. Patrick ◽  
L.C. Wagner ◽  
P.T. Nguyen
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Yield Enhancement ◽  
Production Test ◽  
Final Test ◽  
Critical Design ◽  
The Past ◽  
Product Engineering ◽  
Time Savings ◽  
Analysis Design

Abstract Failure isolation and debug of CMOS integrated circuits over the past several years has become increasingly difficult to perform on standard failure analysis functional testers. Due to the increase in pin counts, clock speeds, increased complexity and the large number of power supply pins on current ICS, smaller and less equipped testers are often unable to test these newer devices. To reduce the time of analysis and improve the failure isolation capabilities for failing ICS, failure isolation is now performed using the same production testers used in product development, multiprobe and final test. With these production testers, the test hardware, program and pattern sets are already available and ready for use. By using a special interface that docks the production test head to failure isolation equipment such as the emission microscope, liquid crystal station and E-Beam prober, the analyst can quickly and easily isolate the faillure on an IC. This also enables engineers in design, product engineering and the waferfab yield enhancement groups to utilize this equipment to quickly solve critical design and yield issues. Significant cycle time savings have been achieved with the migration to this method of electrical stimulation for failure isolation.

Burn-in Failure Analysis of 0.5μm 1MB SRAM: Barrier Glue Layer Cracks and Tungsten Plug “Worm Holes”

1996 ◽  
Author(s):  
E. Widener ◽  
S. Tatti ◽  
P. Schani ◽  
S. Crown ◽  
B. Dunnigan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Product Quality ◽  
Cmos Process ◽  
Designed Experiments ◽  
Root Cause ◽  
Poly Silicon ◽  
New Process ◽  
Supply Current ◽  
Electrical Analysis ◽  
Current Characteristics

Abstract A new 0.5 um 1 Megabit SRAM which employed a double metal, triple poly CMOS process with Tungsten plug metal to poly /silicon contacts was introduced. During burn-in of this product, high currents, apparently due to electrical overstress, were experienced. Electrical analysis showed abnormal supply current characteristics at high voltages. Failure analysis identified the sites of the high currents of the bum-in rejects and discovered cracks in the glue layer prior to Tungsten deposition as the root cause of the failure. The glue layer cracks allowed a reaction with the poly/silicon, causing opens at the bottom of contacts. These floating nodes caused high currents and often latch-up during burn-in. Designed experiments in the wafer fab identified an improved glue layer process, which has been implemented. The new process shows improvement in burn in performance as well as outgoing product quality.

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

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