scholarly journals Automated Cell Layer Counting and Marking at Target Layer of 3D NAND TEM Samples by Focused Ion Beam

2021 ◽  
Author(s):  
Jisu Ryu ◽  
Seojin Kim ◽  
Christopher H. Kang ◽  
Jaeheum Baek
Keyword(s):  
Sample Preparation ◽  
Target Cell ◽  
Flash Memory ◽  
Focused Ion Beam ◽  
Cell Layer ◽  
Ion Beam ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Tem Analysis ◽  
Plan View

Abstract The plan-view TEM analysis has been used for 3D NAND flash memory to analyze metrology and chemical of channel holes. Focused Ion Beam (FIB) is one of the most powerful techniques for precise location sampling in nanometer-scale for Transmission Electron Microscope (TEM) sample preparation. As semiconductor technology improves continuously, 3D NAND is requiring higher stacks to increasing the capacity of storage. In general, an operator counts the cell layer manually to reach the desire layer on TEM sample before thinning. It is not easy way to make TEM samples at the exact desired layer. To make it easier, automatic cell layer counting workflow is introduced in this paper. This progress is carried out until the desired target cell is reached. Furthermore, marking is performed on the target cell layer. This automation recipe is able to offer simple process to count the desired cell layer without manual action and make TEM sample preparation easily.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

scholarly journals TEM Sample Preparation for the Semiconductor Industry - Part 2

1996 ◽  
Vol 4 (1) ◽  
pp. 8-9
Author(s):  
Dave Laken
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
High Current Density ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Ion Beam Etching ◽  
Chemical Etch ◽  
Different Characteristics ◽  
Preparation Techniques

In the November issue of this publication, we described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare material-specific samples for SEM and TEM analysis. Material specific samples have two or more components possessing different characteristics, such as hardness and chemical etch or sputtering rates. Traditional sample preparation techniques (mechanical grinding and polishing, broad ion beam etching, and chemical etching) alter, delaminate, or destroy these samples.FIB handles the preparation of these difficult samples well because of its milling geometry and the high current density of the small beam.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

scholarly journals Automated TEM Sample Preparation

2000 ◽  
Vol 8 (5) ◽  
pp. 14-19 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Efrat Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Milling Time ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Sample Edge ◽  
Specific Distance

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

A Tutorial of the Fib Lift-Out Technique for TEM Specimen Preparation

1999 ◽  
Vol 5 (S2) ◽  
pp. 516-517
Author(s):  
Lucille A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Subsequent Development ◽  
Bulk Sample ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Plan View ◽  
Area Of Interest ◽  
Wide Range

The focused ion beam (FIB) instrument has been developed and exploited by the microelectronics arena for specimen preparation for both scanning and transmission electron microscopy (TEM). The inception [1] and subsequent development [2] of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. The primary advantage of the FIB technique is that site specific cross sections (or plan view sections [3]) may be fabricated quickly and reproducibly. The FIB LO technique has been used extensively in our laboratory for a wide range of materials [4] and biological applications [5] which are summarized in figure 1.The FIB LO method consists of milling a series of trenches around an area of interest. Then the bulk sample is tilted up to ∼60 degrees to allow the beam to impinge on the lower portion of the specimen surface so that cuts can be made along the bottom edge and the lower 2/3 of the distance up one side of the specimen.

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