Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

scholarly journals TEM Sample Preparation for the Semiconductor Industry - Part 2

1996 ◽  
Vol 4 (1) ◽  
pp. 8-9
Author(s):  
Dave Laken
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
High Current Density ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Ion Beam Etching ◽  
Chemical Etch ◽  
Different Characteristics ◽  
Preparation Techniques

In the November issue of this publication, we described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare material-specific samples for SEM and TEM analysis. Material specific samples have two or more components possessing different characteristics, such as hardness and chemical etch or sputtering rates. Traditional sample preparation techniques (mechanical grinding and polishing, broad ion beam etching, and chemical etching) alter, delaminate, or destroy these samples.FIB handles the preparation of these difficult samples well because of its milling geometry and the high current density of the small beam.

Microstructural Characterization of Automated Specimen Preparation for TEM Analysis

2000 ◽  
Vol 6 (S2) ◽  
pp. 528-529
Author(s):  
C. Urbanik Shannon ◽  
L. A. Giannuzzi ◽  
E. M. Raz
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Preparation Techniques

Automated specimen preparation for transmission electron microscopy has the obvious advantage of saving personnel time. While some people may perform labor intensive specimen preparation techniques quickly, automated specimen preparation performed in a timely and reproducible fashion can significantly improve the throughput of specimens in an industrial laboratory. The advent of focused ion beam workstations for the preparation of electron transparent membranes has revolutionized TEM specimen preparation. The FIB lift-out technique is a powerful specimen preparation method. However, there are instances where the “traditional” FIB method of specimen preparation may be more suitable. The traditional FIB method requires that specimens must be prepared so that the area of interest is as thin as possible (preferably less than 50 μm) prior to FIB milling. Automating the initial specimen preparation for brittle materials (e.g., Si wafers) may be performed using the combination of cleaving and sawing techniques as described below.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

2011 ◽  
Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Organic Substrate ◽  
Dual Beam ◽  
Preparation Techniques

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.

scholarly journals Just Say NO to Microtoming Silicon!

2006 ◽  
Vol 14 (6) ◽  
pp. 58-59
Author(s):  
Ron Anderson
Keyword(s):  
Biological Sciences ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
Small Structure ◽  
The Subject ◽  
Diamond Knife

Arecent discussion on the Microscopy Listserver on the subject of microtoming Si reminded many of us of this decades-old issue. Silicon is one of the easiest materials to prepare for TEM analysis with dozens of protocols available including chemical etching, electropolishing, mechanical polishing with and without ion milling, microcleaving, and the use of a focused ion beam instrument. The time involved in Si preparation can range from minutes to a few hours. Things become more complex if it is desired to prepare a Si semiconductor device with high specimen preparation spatial resolution i.e. prepping a prespecified, very small, structure.Now and then a technologist, often times in the biological sciences, is asked to prepare a Si TEM specimen and wonders if Si can be microtomed. The results are almost always a pile of Si dust and frequently a damaged diamond knife.

Real Time SEM Imaging of FIB Milling Processes for Extended Accuracy on TEM Samples for EFTEM Analysis

2003 ◽  
Author(s):  
P. Gnauck ◽  
U. Zeile ◽  
P. Hoffrogge ◽  
G. Benner ◽  
A. Orchowski ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Quantitative Information ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Ic Manufacturing ◽  
On Line ◽  
Broad Variety ◽  
Preparation Techniques

Abstract We present application examples of site specific energy filtered transmission electron microscopy (EFTEM) analysis using advanced focused ion beam (FIB) specimen preparation techniques. Specifically, we address topics such as throughput and reliability enhancement by chemically assisted broad ion beam milling and on-line monitoring of the etch process. We discuss how integrated elemental analysis by EFTEM can be used to gain quantitative information on the broad variety of new material systems currently entering front end and back end of the IC manufacturing process line. The accelerating pace of device integration results in extreme demands for quantitative analysis in process development, yield ramp-up and process control with spatial resolution and elemental sensitivity at the very limits of currently available instrumentation. Historically, the high resolution performance of TEM analysis has been hampered by long turn around times for the required sample preparation. Meanwhile the routine use of FIB systems for “trench” and “lift-out” preparation techniques allows for an enormous increase in the efficiency of TEM analysis.

A High Resolution TEM Specimen Thinning System

1991 ◽  
Vol 254 ◽  
Author(s):  
R. Clampitt ◽  
G. G. Ross ◽  
M. Phelan ◽  
S. A. Davies
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Commercial System ◽  
High Resolution Tem

AbstractImprovements in specimen preparation for TEM analysis are being constantly sought, particularly in the study of microelectronics' materials and in failure analysis of devices. We describe here a compact commercial system capable of thinning (milling) selected regions of a specimen by means of a scanned focused ion beam of sub-micron spatial resolution.

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