Automatic Urine Output Measuring Device Performance Validation and Efficacy.

Air density is a parameter used in numerous applications. Its correct determination can have a key impact on the outcome of an experiment. In calculation of the drag coefficient or pneumatic piping energy loss air density value is crucial for obtaining accurate results. In order to precisely measure this parameter, the electronic air density measuring device was designed and built. The following article presents design, construction, calibration and tests of the mentioned device. The device was designed with a target of reaching set assumptions. It was constructed with open-source programming environment and easily accessible components. Calibration of the device’s sensors was performed in order to ensure high accuracy of results. Calibration of the humidity sensor was performed with use of saturated salt solutions. Exemplary measurement was made to ensure device performance. Created tool provides excellent and cheap fulfillment of the assumptions set in the article.

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Application of New Type Gas-Solid Two Phase Flow Pipeline Average Velocity Measurement System

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.516-517.746 ◽

2012 ◽

Vol 516-517 ◽

pp. 746-751

Author(s):

Bao Min Sun ◽

Yong Gang Zhao ◽

Zhi Qiang Liu ◽

Ye Wei Zhu ◽

Zhi Yong Zhao ◽

...

Keyword(s):

Average Velocity ◽

Two Phase Flow ◽

Rectangular Cross Section ◽

Device Performance ◽

Phase Flow ◽

Secondary System ◽

Two Phase ◽

Measuring Device ◽

Structure Reliability ◽

Small Flow

In order to measure average velocity of Gas-Solid Two Phase Flow in pipelines real time and accurate, to develop the gas-solid two-phase flow average velocity meter based on direct measurement method and the secondary system. The paper introduces the working principle of the system and analyzes the factors that affect the accurate measurement. To further study the performance and continuous improve its structural design, an aerodynamic testing system was established. The device performance tests were carried out. In addition, the cold and hot industrials test were carried out in the industrial field.Practical application and test results showed that the device performance is well to achieve the industrial pipeline gas-solid two-phase flow average velocity long-term, stable and accurate measurement, and measurement error <2%.It has many features: simple structure, reliability, small flow resistance, easy installation, low maintenance costs, long life, a short straight pipe required. It can measure the gas-solid two-phase flow average velocity with high or low concentrations, and suitable for round, rectangular cross-section pipe installation. The measuring device has been used in dozens of power plant boiler, and a national invention patent and significant economic and social benefits to be achieved.

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Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088798 ◽

1991 ◽

Vol 49 ◽

pp. 896-897

Author(s):

Marylyn Bennett-Lilley ◽

Thomas T.H. Fu ◽

David D. Yin ◽

R. Allen Bowling

Keyword(s):

Chemical Vapor ◽

Device Performance ◽

Particle Characterization ◽

Particle Generation ◽

Tungsten Hexafluoride ◽

Homogeneous Particle ◽

Multiple Levels ◽

Circuit Density ◽

Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

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In situ TEM measurements of the electrical properties of interface dislocations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131322 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1338-1339

Author(s):

F. M. Ross ◽

R. Hull ◽

D. Bahnck ◽

J. C. Bean ◽

L. J. Peticolas ◽

...

Keyword(s):

Electrical Properties ◽

Electronic Device ◽

In Situ Tem ◽

Device Performance ◽

Misfit Dislocations ◽

Electrical Characteristics ◽

Strained Layer ◽

Transmission Electron ◽

Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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Effects of cisplatin treatment on the rat neurohypophysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100142256 ◽

1986 ◽

Vol 44 ◽

pp. 122-123

Author(s):

J.M. Fadool ◽

P.J. Boyer ◽

S.K. Aggarwal

Keyword(s):

Side Effects ◽

Urine Output ◽

Morphological Changes ◽

Limiting Factor ◽

Antineoplastic Drugs

Cisplatin (CDDP) is currently one of the most valuable antineoplastic drugs available. However, it has severe toxic side effects of which nephrotoxicity is the major dose limiting factor in its use. It induces morphological changes in the kidney with hampered urine output. The present study is an effort to determine the influence of the drug on the neurohypophysis for any antidiuretic effects on the kidney.

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Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014542x ◽

1986 ◽

Vol 44 ◽

pp. 816-817

Author(s):

T.C. Sheu ◽

S. Myhajlenko ◽

D. Davito ◽

J.L. Edwards ◽

R. Roedel ◽

...

Keyword(s):

Integrated Circuits ◽

Secondary Electron ◽

Crystal Defects ◽

Device Performance ◽

Gaas Wafer ◽

Surface Charging ◽

Gaas Substrates ◽

Voltage Contrast ◽

Cathodoluminescence Imaging ◽

Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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