Transverse piezoelectric constant of aluminium nitride films deposited on aluminium substrate by reactive magnetron sputtering

2020 ◽  
Vol 64 (1-4) ◽  
pp. 607-613
Author(s):  
Daniele Desideri ◽  
Enrico Bernardo ◽  
Alain Jody Corso ◽  
Alberto Doria ◽  
Alvise Maschio ◽  
...  

In view of high temperature applications, c-axis oriented aluminium nitride films on aluminium substrate were produced by magnetron sputtering at low pressure (0.3 and 0.5 Pa) and different values of nitrogen concentration. XRD data show the highest intensity of (002) diffraction peak with nitrogen concentration of 0.4, and the peak value decreases when the nitrogen concentration moves away from 0.4. The transverse piezoelectric constant (absolute value) was determined for all conditions, the highest values observed with nitrogen concentration of 0.4 (in agreement with XRD data) and 0.8, with a slight preference for 0.4. These new experimental data and the presence of the two peaks of similar amplitude on the estimated transverse piezoelectric constant are useful information for the identification of good practical operative conditions for AlN films sputtered on aluminium, basic structure for the development of high temperature piezoelectric transducers.

2005 ◽  
pp. 269-276
Author(s):  
Mirjana Stajic ◽  
Sonja Duletic-Lausevic ◽  
Jelena Vukojevic

Pleurotus eryngii produced laccase (Lac) both under conditions of submerged fermentation (SF) and solid-state fermentation (SSF) using all of the investigated carbon and nitrogen sources, while significant peroxidases production occurred only under SSF conditions. The highest levels of Lac activity were found under SF conditions of dry ground mandarine peels (999.5 U/l). After purification of extracellular crude enzyme mixture of P. eryngii which was grown under SF conditions with dry ground mandarine peels it was revealed two peaks of Lac activity and one peak of activity against phenol red in absence of external Mn2+ which was very low (1.4 U/l). Results obtained by purification also showed that the levels of phenol red oxidation in absence of external Mn2+ were higher than phenol red oxidation levels in presence of external Mn2+. In the medium with the best carbon source for Lac production (dry ground mandarine peels), (NH4)2SO4, with a nitrogen concentration of 20 mM, was the most optimum nitrogen source among 8 investigated sources.


2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.


2020 ◽  
Vol 6 (3) ◽  
pp. 459-466 ◽  
Author(s):  
Zong-Yang Shen ◽  
Chen Qin ◽  
Wen-Qin Luo ◽  
Fusheng Song ◽  
Zhumei Wang ◽  
...  

2019 ◽  
Vol 125 (10) ◽  
Author(s):  
F. Di Pietrantonio ◽  
M. Fosca ◽  
M. Benetti ◽  
D. Cannatà ◽  
C. Verona ◽  
...  

2006 ◽  
Vol 45 ◽  
pp. 1052-1057 ◽  
Author(s):  
Dariusz Zientara ◽  
Mirosław M. Bućko ◽  
Jerzy Lis

Dense polycrystalline aluminium oxynitride with spinel structure, γ-alon, is noted for its excellent thermal properties, high-temperature mechanical properties, low dielectric constant, thermal expansion coefficients and intrinsic transparency extending from ultraviolet to mid-infrared wavelengths. The conventional way for synthesis of γ-alon powder is high-temperature reaction of aluminium nitride and corundum in pure nitrogen or a vacuum. The dense materials are made by reactive pressureless sintering or hot-pressing of a powder compact. This work is focused on preparation of γ-alon materials derived from SHS synthesized powders. The powders for sintering were synthesized from mixtures of aluminium and corundum powders of different proportions. The products of the SHS synthesis were composed mostly of γ-alon and aluminium nitride with small amount of non-reacted substrates. Ground powders were hot-pressed at 1750, 1850 and 1950°C for 1 h under 25 MPa in nitrogen flow. Such procedure allowed dense material composed of pure γ-alon with good mechanical properties to obtain.


2011 ◽  
Vol 274 ◽  
pp. 012116 ◽  
Author(s):  
G Gálvez de la Puente ◽  
S Zitzlsberger ◽  
J A Guerra Torres ◽  
O Erlenbach ◽  
R Weingärtner ◽  
...  

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