scholarly journals Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 92
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Mass Spectrometry Analysis ◽  
Spectrometry Analysis ◽  
Reported Data ◽  
P Type

Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor’s turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn–O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips.

scholarly journals High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tsung-Ta Wu ◽  
Wen-Hsien Huang ◽  
Chih-Chao Yang ◽  
Hung-Chun Chen ◽  
Tung-Ying Hsieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
High Performance ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Si Thin Film

scholarly journals Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction Photodetector With Fast Response and High Detectivity

2021 ◽  
Vol 9 ◽  
Author(s):  
Qi Liu ◽  
Ming Yang ◽  
Jiangwei Zhang ◽  
Mingliang Yang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Three Dimensional ◽  
Fast Response ◽  
Current Response ◽  
Organic Thin Film ◽  
Small Current ◽  
Dirac Semimetal ◽  
High Level ◽  
P Type

As a typical three-dimensional Dirac semimetal (3D DSM), Cd3As2 possess ultrahigh carrier mobility, high level of full spectral absorption, fast electron transmission speed, and high photocurrent response, which enable wide applications in infrared photodetector. However, the large dark current of the detector based on Cd3As2 thin film limits the application of the small current response. Hence, we demonstrated heterojunction photodetectors based on n-type 3D DSM Cd3As2 (pristine and Zn doped) and p-type organic (PbPc) by depositing PbPc thin film on Cd3As2 (pristine and Zn doped) thin film using thermal deposition method. These photodetectors can detect the radiation wavelength from 405 to 1,550 nm at room temperature. It is remarkable that this thin film heterojunction photodetector exhibits high detectivity (3.95 × 1011 Jones) and fast response time (160 μs) under bias voltage, which is significantly improved vs. that of Cd3As2-based devices. The excellent performances are attributed to the strong built-in electric field at the interface of p-n junction, which is beneficial for efficient photocarriers collection and transportation. These results show that DSM/organic thin film heterojunction has excellent performance in the application of photodetectors. By combining 3D DSM with organic to form heterojunction, it provides a feasible solution for high-performance photodetectors.

scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

scholarly journals High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2145 ◽  
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Random Access ◽  
Oxide Thin Film ◽  
Amorphous Sio2 ◽  
Sio2 Substrate ◽  
Channel Layer

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.

High performance p-type NiOx thin-film transistor by Sn doping

2016 ◽  
Vol 108 (23) ◽  
pp. 233503 ◽  
Author(s):  
Tengda Lin ◽  
Xiuling Li ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Sn Doping ◽  
P Type

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

2014 ◽  
Vol 14 (5) ◽  
pp. 666-672 ◽  
Author(s):  
Myeonghun U ◽  
Young-Joon Han ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
P Type

Solution-Processed High-Performance of p-Channel Copper-Tin-Sulphur Thin-Film Transistor

2021 ◽  
Author(s):  
Narendra Naik Mude ◽  
Ravindra Naik Bukke ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Tin Sulfide ◽  
Solution Processed ◽  
Systematic Analysis ◽  
Precursor Solution Concentration ◽  
P Type

We introduce in this paper a solution-processed copper tin sulfide (CTS) thin film by varying CTS precursor solution concentration for p-type thin-film transistor (TFT). The systematic analysis for optical and...

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