scholarly journals Assessment of Potential of the High-Voltage Anodic Plasma Source to Deposit Multilayer Structures Relevant to X-ray Mirror Applications

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 531
Author(s):  
Aurel-Mihai Vlaicu ◽  
Alexandru Anghel ◽  
Marius Badulescu ◽  
Cristina Surdu-Bob
Keyword(s):  
Film Thickness ◽  
Layer Thickness ◽  
Deposition Rate ◽  
High Voltage ◽  
Plasma Source ◽  
Multilayer Structures ◽  
Deposition Technique ◽  
X Ray ◽  
Coating Technique ◽  
Glass Substrates

(1) Background: The high-voltage anodic-plasma (HVAP) coating technique has a series of specificities that are not simultaneously met in other deposition methods. This paper aimed at assessing the potential of HVAP to synthesize quality multilayers for X-ray optics. (2) Methods: Nanolayers of W, Ta, B, and Si were deposited as mono-, bi-, and multilayers onto very smooth glass substrates by HVAP, and their thickness and density were analyzed by X-ray reflectometry. The minimal film thickness needed to obtain continuous nanolayers was also investigated. (3) Results: Nanolayer roughness did not increase with layer thickness, and could be lowered via deposition rate, with values as low as 0.6 for the W nanolayer. Minimal film thickness for continuous films for the studied metals was 4 nm (W), 6 nm (Ta), 2.5 nm (B), and 6 nm (Si). (4) Conclusions: The investigation revealed the range of parameters to be used for obtaining quality nanolayers and multilayers by HVAP. Advantages and possible improvements are discussed. This deposition technique can be tailored for demanding applications such as X-ray mirrors.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Uniform Low-Temperature Deposition of Optical Layers by Plasma-Activated CVD

1992 ◽  
Vol 269 ◽  
Author(s):  
Hans Lydtin ◽  
Arnd Ritz
Keyword(s):  
Low Temperature ◽  
Layer Thickness ◽  
Operation Mode ◽  
Plasma Source ◽  
Multilayer Structures ◽  
Dielectric Layers ◽  
Remote Operation ◽  
Temperature Deposition ◽  
Microwave Applicator ◽  
Materials Used

ABSTRACTPlasma activated CVD in a remote operation mode is applied to the deposition of dielectric layers on extended substrates. Layer thickness uniformity of ±1% over areas of 80mm diameter is demonstrated. The microwave applicator sustaining the plasma source of condensable species is compared in its deposition characteristic to conventional evaporation sources. Deposition efficiencies up to 70% are reached. The layer materials used are SiO2 and TiO2. Multilayer structures are prepared and optically characterized.

Influence of in-process copper incorporation on the quality of diamond-like carbon films deposited by pulsed laser deposition technique

1996 ◽  
Vol 11 (9) ◽  
pp. 2236-2241 ◽  
Author(s):  
S. J. Dikshit ◽  
Pramada Lele ◽  
S.B. Ogale ◽  
S. T. Kshirsagar
Keyword(s):  
Photoelectron Spectroscopy ◽  
Copper Concentration ◽  
Laser Energy ◽  
Carbon Films ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray ◽  
Glass Substrates ◽  
Pure Graphite ◽  
Composite Pellets

Copper-incorporated carbon films have been prepared on Si(100) and Corning (7059) glass substrates by the pulsed excimer laser deposition technique using KrF radiation (λ = 248 nm). Cold-pressed composite pellets, having compositions from 2 at. % to 11 at. % copper in carbon, were used as targets for ablation. Good quality, scratch-proof films were obtained at a laser energy density of 2−3 J/cm2 and a substrate temperature of 50 °C. The films were characterized by x-ray diffraction (XRD), Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), UV-visible spectrometry, ellipsometry, and four-point probe resistivity measurements. Under similar deposition conditions, films obtained from composite targets of lower copper concentration are seen to have better diamond-like character as compared to those obtained from a pure graphite target. At such low concentrations, copper is seen to cluster in the form of nanoparticles. As the copper concentration increases in the films, they tend to acquire disordered graphitic network with degraded DLC characteristics, and the size of copper agglomerates increases from about 5 nm (for the 2 at. % case) to 85 nm (for the 11 at. % case). It is seen that an increase in the copper content leads to modifications in the carbon network, additional interband transitions, and reduction of the band gap.

Structural and Optical Properties of Thermally Evaporated CdTe Film

2013 ◽  
Vol 678 ◽  
pp. 131-135 ◽  
Author(s):  
D. Geethalakshmi ◽  
N. Muthukumarasamy ◽  
R. Balasundaraprabhu
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Room Temperature ◽  
Cdte Film ◽  
Annealing Duration ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cooling Cycle ◽  
X Ray ◽  
Glass Substrates

Abstract. Cadmium Telluride (CdTe) films were thermally evaporated on to glass substrates at room temperature. By varying the amount of source material, thin films of thickness ranging from 90 nm – 635 nm have been prepared. Film of thickness 200 nm was annealed to 400°C for different durations of time and also subjected to alternate heating - cooling cycle. X-ray diffraction study was carried out to study the effect of film thickness, annealing duration and alternate heating-cooling cycle on the structural properties of the films. The transmittance spectra recorded using a UV-Vis-NIR spectrophotometer was used to study the change in optical properties of the films with respect to film thickness, annealing duration and alternate heating-cooling cycle.

scholarly journals Laser energy effect on the properties of ZnS thin films prepared by PLD technique

2019 ◽  
Vol 11 (21) ◽  
pp. 84-90
Author(s):  
Esraa K. Hamed
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Energy Effect ◽  
X Ray ◽  
Glass Substrates ◽  
Atomic Force

Zinc sulfide (ZnS) thin films were deposited on glass substrates using pulsed laser deposition technique. The laser used is the Q-switched Nd: YAG laser with 1064nm wavelength and 1Hz pulse repetition rate and varying laser energy 700mJ-1000mJ with 25 pulse. The substrate temperature was kept constant at 100°C. The structural, morphological and optical properties of ZnS thin films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer.

Study on Optical and Electronic Properties of Sn-Doped ZnPc

2013 ◽  
Vol 802 ◽  
pp. 204-208
Author(s):  
Adirek Rangkasikorn ◽  
Chaloempol Saributr ◽  
Sunit Rojanasuwan ◽  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Photoelectron Spectroscopy ◽  
Deposition Rates ◽  
X Ray ◽  
Glass Substrates ◽  
Β Phase ◽  
Α Phase ◽  
Optical And Electronic Properties ◽  
Vis Spectroscopy ◽  
Evaporation Technique

Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α-phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films.

scholarly journals Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
K. Baba ◽  
R. Hatada ◽  
S. Flege ◽  
W. Ensinger
Keyword(s):  
Ion Implantation ◽  
Tribological Properties ◽  
High Voltage ◽  
Photoelectron Spectroscopy ◽  
Plasma Source ◽  
Silver Concentration ◽  
Process Conditions ◽  
Diamond Like Carbon ◽  
X Ray ◽  
Plasma Source Ion Implantation

The doping effect of silver on the structure and properties of diamond-like carbon (DLC) films was investigated. The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV) with reactive magnetron sputtering of an Ag disc. A mixture of two gases, argon, and acetylene was introduced into the discharge chamber as working gas for plasma formation. A negative high-voltage pulse was applied to the substrate holder, thus, accelerating ions towards the substrate. The chemical composition of the deposited films was modified by the respective gas flows and determined using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The silver concentration within the DLC films influenced the structure and the tribological properties. The surface roughness, as observed by scanning electron microscopy, increased with silver concentration. The film structure was characterized by Raman spectroscopy and X-ray diffractometry (XRD). The DLC films were mainly amorphous, containing crystalline silver, with the amount of silver depending on the process conditions. The tribological properties of the films were improved by the silver doping. The lowest friction coefficient of around 0.06 was derived at a low silver content.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Aperiodic multilayer structures in soft X-ray optics

2015 ◽  
Vol 185 (11) ◽  
pp. 1203-1214 ◽  
Author(s):  
Aleksandr S. Pirozhkov ◽  
Evgenii N. Ragozin
Keyword(s):  
Multilayer Structures ◽  
Ray Optics ◽  
X Ray

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

Sign in / Sign up

Export Citation Format

Share Document