Structural and Optical Properties of Thermally Evaporated CdTe Film

2013 ◽  
Vol 678 ◽  
pp. 131-135 ◽  
Author(s):  
D. Geethalakshmi ◽  
N. Muthukumarasamy ◽  
R. Balasundaraprabhu
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Room Temperature ◽  
Cdte Film ◽  
Annealing Duration ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cooling Cycle ◽  
X Ray ◽  
Glass Substrates

Abstract. Cadmium Telluride (CdTe) films were thermally evaporated on to glass substrates at room temperature. By varying the amount of source material, thin films of thickness ranging from 90 nm – 635 nm have been prepared. Film of thickness 200 nm was annealed to 400°C for different durations of time and also subjected to alternate heating - cooling cycle. X-ray diffraction study was carried out to study the effect of film thickness, annealing duration and alternate heating-cooling cycle on the structural properties of the films. The transmittance spectra recorded using a UV-Vis-NIR spectrophotometer was used to study the change in optical properties of the films with respect to film thickness, annealing duration and alternate heating-cooling cycle.

scholarly journals Argon irradiation effects on the structural and optical properties of reactively sputtered CrN films

2015 ◽  
Vol 47 (2) ◽  
pp. 187-194 ◽  
Author(s):  
M. Novakovic ◽  
M. Popovic ◽  
N. Bibic
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Optical Parameters ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The present study deals with CrN films irradiated at room temperature (RT) with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive sputtering on Si (100) wafers, at nitrogen partial pressure of 5?10-4 mbar, to a total thickness of 280 nm. The substrates were held at 150?C during deposition. After deposition the CrN layers were irradiated with 200 keV Ar+ ions to the fluences of 5?1015 - 2?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and X-ray diffraction (XRD). Spectroscopic ellipsometry measurements were carried out in order to study optical properties of the samples. The irradiations caused the microstructrual changes in CrN layers, but no amorphization even at the highest argon fluence of 2?1016 ions/cm2. Observed changes in microstructure were correlated with the variation in optical parameters. It was found that both refractive index and extinction coefficient are strongly dependent on the defect concentration in CrN layers.

scholarly journals Temperature effect on structural and optical properties of V2O5 thin films prepared by spray pyrolysis technique

2020 ◽  
Vol 307 ◽  
pp. 01033
Author(s):  
Asmaa Mrigal ◽  
Lahocine El Gana ◽  
Mouhamed Addou ◽  
Khadija Bahedi ◽  
Rajae Temsamani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Optical Dielectric Constant

In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.

Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

2012 ◽  
Vol 620 ◽  
pp. 368-372 ◽  
Author(s):  
Saleh H. Abud ◽  
Hassan Zainuriah ◽  
Fong Kwong Yam ◽  
Alaa J. Ghazai
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural and optical properties of grown film have been characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). Indium-mole fraction has been computed to be 0.27 using XRD data and Vegards law with high grain size and low tensile strain. Room-temperature photoluminescence revealed an intense peak at 534 nm (2.3 eV) related to our sample In0.27Ga0.73N.

Effect of Annealing Temperature on Structural and Optical Properties of (Cu, Al):ZnO Thin Film by Sol-Gel Method

2014 ◽  
Vol 852 ◽  
pp. 314-318
Author(s):  
Ying Xiang Yang ◽  
Qing Nan Shi ◽  
Hong Lin Tan
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Sizes

The (Cu,Al):ZnO thin films were prepared on glass substrates by sol-gel spin coating technique.The effect of annealing temperature on the structural and optical properties of the (Cu, Al):ZnO thin film was investigated by means of X-ray diffraction and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with annealing temperature. the annealing temperature also played a significant role in the blue-shifted phenomenon.

Structural and Optical Properties of CdS Thin Films Grown by Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Sizes ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

scholarly journals Structural and optical properties of SnO2–Al2O3 nanocomposite synthesized via sol-gel route

2015 ◽  
Vol 33 (4) ◽  
pp. 714-718 ◽  
Author(s):  
Neeraj K. Mishra ◽  
Chaitnaya Kumar ◽  
Amit Kumar ◽  
Manish Kumar ◽  
Pratibha Chaudhary ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Optical Properties ◽  
Sol Gel ◽  
Physical Interaction ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Scanning Electron

AbstractA nanocomposite of 0.5SnO2–0.5Al2O3 has been synthesized using a sol-gel route. Structural and optical properties of the nanocomposite have been discussed in detail. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray diffraction spectroscopy confirm the phase purity and the particle size of the 0.5SnO2–0.5Al2O3 nanocomposite (13 to 15 nm). The scanning electron microscopy also confirms the porosity in the sample, useful in sensing applications. The FT-IR analysis confirms the presence of physical interaction between SnO2 and Al2O3 due to the slight shifting and broadening of characteristic bands. The UV-Vis analysis confirms the semiconducting nature because of direct transition of electrons into the 0.5SnO2–0.5Al2O3 nanocomposites.

Structural and Optical Properties of Al Co-Doped ZnCoO Thin Film

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission ◽  
Uv Absorption Spectroscopy ◽  
Co Doped

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Laser induced plasma of cadmium oxide: structural, morphological and optical properties

2021 ◽  
Vol 2114 (1) ◽  
pp. 012012
Author(s):  
Tamara S. Hussein ◽  
Ala F. Ahmed
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Cadmium Oxide ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
X Ray ◽  
Laser Induced Plasma ◽  
Atomic Force ◽  
Doping Ratio

Abstract In this study, the effect of grafting with Iron (Fe) ratios (0.1, 0.3 and 0.5) on the structural and optical properties of cadmium oxide films (CdO) was studied, as these films were prepared on glass bases using the method of pulse laser deposition (PLD). The crystallization nature of the prepared films was examined by X-ray diffraction technique (XRD), which showed that the synthesis of the prepared films is polycrystalline, and Atomic Force Microscope (AFM) images also showed that the increased vaccination with Iron led to an increase in the crustal size ratio and a decrease in surface roughness, The absorption coefficient was calculated and the optical energy gap for the prepared thin films. It was found the absorption decreases and the energy gap decreases with the increase of doping ratio.

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