scholarly journals Pulsed Laser Deposition and Laser-Induced Backward Transfer to Modify Polydimethylsiloxane

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1521
Author(s):  
Mariapompea Cutroneo ◽  
Vladimir Havranek ◽  
Josef Flaks ◽  
Petr Malinsky ◽  
Lorenzo Torrisi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Sessile Drop ◽  
Rutherford Backscattering Spectrometry ◽  
Low Cost ◽  
Active Material ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Stretchable Electronics ◽  
Advantages And Disadvantages ◽  
Large Application

Polydimethylsiloxane (PDMS) is a silicone-elastomer that owes its large application in the field of stretchable electronics to its chemical and thermal stability, transparency, flexibility, non-toxicity, compatibility, and low cost. PDMS is a versatile material because it can be used both as an elastic substrate and, after functionalization, as an active material for the design of stretchable electronics. One possible route for the functionalization of PDMS, thus becoming an active material together with numerous metals and semiconductors, is the embedding of conductive nanomaterials. Presently, pulsed laser deposition (PLD) and laser-induced backward transfer (LIBT) are used to deposit carbon- based material on polydimethylsiloxane. In this study, we explore and compare the surface treatments, advantages, and disadvantages of both different employed techniques in different environments. The modification of the wettability, elasticity, morphology, composition, and optical characteristics of polydimethylsiloxane will be evaluated by surface techniques such as scanning electron microscopy, Rutherford backscattering spectrometry, and the sessile drop method.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Large-Area, Low-Cost Infrared Metamaterial Fabrication Via Pulsed Laser Deposition with Metallic Mesh as a Shadow Mask

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 373-379 ◽  
Author(s):  
Zidong Zhang ◽  
Shuhui Chen ◽  
Xiujie Ji ◽  
Chen Qin ◽  
Huimin Wang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Low Cost ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Shadow Mask ◽  
Large Area ◽  
Metallic Mesh

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

scholarly journals Electrochemical Response of Platinum Ultrathin Layer Formed by Pulsed Laser Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Takeshi Ito ◽  
Satoru Kaneko ◽  
Masayuki Kunimatsu ◽  
Yasuo Hirabayashi ◽  
Masayasu Soga ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Low Cost ◽  
Pulsed Laser ◽  
Metal Electrode ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Images ◽  
Ultrathin Layer

Ultrathin layer of platinum (ULPt) was deposited on glassy carbon (GC) substrate by using pulsed laser deposition (PLD) method, and electrochemical properties of the ULPt were discussed. The deposition was simply performed at room temperature with short deposition time. Atomic force microscopy and scanning electron microscopy images showed the flat surface of the ULPt. X-ray photoelectron spectroscopy (XPS) characterized the ULPt in the Pt(0) state, and biding energy of ULPt was positively shifted. These results indicated that nanostructure of Pt thin layer was formed. The electrochemical activity of the prepared ULPt on GC substrate was superior to a bulk Pt electrode regarding the potential and the magnitude of current on oxidizing hydrogen peroxide. This fast and easily prepared low-cost electrode had the potential to replace a conventional bulk metal electrode.

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Pulsed laser deposition of thin superconducting films of Ho1Ba2Cu3O7 − x and Y1Ba2Cu3O7 − x

1988 ◽  
Vol 3 (6) ◽  
pp. 1169-1179 ◽  
Author(s):  
D. B. Geohegan ◽  
D. N. Mashburn ◽  
R. J. Culbertson ◽  
S. J. Pennycook ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Ablation Mechanism ◽  
Oriented Material

Thin films of Ho1Ba2Cu3O7 − x and Y1Ba2Cu3O7 − x were deposited on SrTiO3 and Al2O3, substrates by pulsed laser deposition of high-Tc bulk superconductor pellets in vacuum. Following annealing in O2 at 800–900 °C the films were superconducting with typical Tc (50%) = 89 K and transition widths of 10 K. Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) were utilized to study the stoichiometry of the as-deposited films for laser energy, densities between 0.11 and 4.5 J cm−2. The films were deficient in holmium and yttrium for energy densities below 0.6 and 0.4 J cm −2, respectively. The films were stoichiometric for fluences above 0.6 J cm−2. In addition, preliminary time dependence and spectroscopic observations of the laser-produced plasma are presented. The results indicate an ablation mechanism that at high energy densities preserves stoichiometry. TEM and x-ray characterization of annealed, superconducting Ho1Ba2Cu3O7 − x films on (100) SrTiO3 showed mixed regions of epitaxially oriented 1:2:3 material with either the c axis or a axis oriented along the surface normal. The a-axis-oriented material grew preferentially in the films with b, c, twinning.

ANGULAR DISTRIBUTION OF TUNGSTEN MATERIAL AND ION FLUX DURING NANOSECOND PULSED LASER DEPOSITION

2016 ◽  
Vol 23 (03) ◽  
pp. 1650004 ◽  
Author(s):  
M. S. HUSSAIN ◽  
A. H. DOGAR ◽  
A. QAYYUM ◽  
S. A. ABBASI
Keyword(s):  
Pulsed Laser Deposition ◽  
Glass Substrate ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Angle ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Ion Energy ◽  
Surface Normal ◽  
Tungsten Material

Tungsten thin films were prepared by pulsed laser deposition (PLD) technique on glass substrates placed at the angles of 0[Formula: see text] to 70[Formula: see text] with respect to the target surface normal. Rutherford backscattering Spectrometry (RBS) analysis of the films indicated that about 90% of tungsten material flux is distributed in a cone of 40[Formula: see text] solid angle while about 54% of it lies even in a narrower cone of 10[Formula: see text] solid angle. Significant diffusion of tungsten in glass substrate has been observed in the films deposited at smaller angles with respect to target surface normal. Time-of-flight (TOF) measurements performed using Langmuir probe indicated that the most probable ion energy decreases from about 600 to 91[Formula: see text]eV for variation of [Formula: see text] from 0[Formula: see text] to 70[Formula: see text]. In general ion energy spread is quite large at all angles investigated here. The enhanced tungsten diffusion in glass substrate observed at smaller angles is most probably due to the higher ion energy and ion assisted recoil implantation of already deposited tungsten.

Pulsed Laser Deposition of ZnO Thin Films for Piezoelectric Applications

1994 ◽  
Vol 360 ◽  
Author(s):  
E.P. Donovan ◽  
J.S. Horwitz ◽  
C.A. Carosella ◽  
R.C.Y. Auyeung ◽  
D.B. Chrisey ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
Infrared Transmission ◽  
X Ray ◽  
Fused Quartz

AbstractTransparent, insulating ZnO thin films have been deposited in-situ by pulsed laser deposition (PLD) from sintered targets. Films were deposited on substrates of fused quartz, <0001> A12O3, polycrystalline and textured (111) Au, at several substrate deposition temperatures (TSubstrate ≤ 700° C) and background oxygen pressures (P ≤ 300 mTorr). Film structure, morphology and electrical properties were characterized by X-ray diffraction, Rutherford backscattering spectrometry, optical properties were characterized by infrared transmission and reflection, and electrical resistivity was measured normal to the films. Films were crystalline, phase pure, and c-axis oriented. ZnO films deposited onto fused quartz and <0001> sapphire showed x-ray rocking curve full width at half maxima of 5° and 0.34°, respectively. The structure of ZnO films deposited on (111) textured Au was sensitive to the degree of texturing in the Au. The resistivity of PLD ZnO films was 61-63 kΩcm which was a factor of three improvement over sputter deposited films. Deposition of Au by both PLD and IBAD showed a negative correlation between the crystalline texturing and film adherence.

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