scholarly journals Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 717
Author(s):  
Ki-Sik Im ◽  
Mallem Siva Pratap Reddy ◽  
Yeo Jin Choi ◽  
Youngmin Hwang ◽  
Sung Jin An ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Deep Level ◽  
Low Frequency ◽  
Ammonium Hydroxide ◽  
Gate Insulator ◽  
Frequency Noise ◽  
Tetramethyl Ammonium Hydroxide ◽  
Shallow Traps ◽  
Gan Buffer Layer ◽  
Mobility Fluctuations

A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. At the on-state, the noise spectra in the fabricated GaN device were 1/fγ properties with γ ≈ 1, which is explained by correlated mobility fluctuations (CMF). On the other hand, the device exhibited Lorentzian or generation-recombination (g-r) noises at the off-state due to deep-level trapping/de-trapping into the GaN buffer layer. The trap time constants (τi) calculated from the g-r noises became longer when the drain voltage increased up to 5 V, which was attributed to deep-level traps rather than shallow traps. The severe drain lag was also investigated from pulsed I-V measurement, which is supported by the noise behavior observed at the off-state.

scholarly journals Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 848
Author(s):  
Ki-Sik Im ◽  
Jae-Hoon Lee ◽  
Yeo Jin Choi ◽  
Sung Jin An
Keyword(s):  
Buffer Layer ◽  
Deep Level ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Temperature Method ◽  
Gan Buffer Layer

We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed I-V characterization performances. The devices with the highest GaN buffer resistance were grown on sapphire substrate using two-step growth temperature method without additional compensation doping. The proposed device exhibited the degraded off-state leakage current due to the improved GaN buffer quality compared to the reference devices with relative low buffer resistance, which is confirmed by high resolution X-ray diffraction (HRXRD). However, the proposed device with deep-level defects in GaN buffer layer showed the reduced hysteresis (∆Vth), increased breakdown voltage (BV), and enhanced pulse I-V characteristics. Regardless of GaN buffer resistance, all devices clearly showed 1/f behavior with carrier number fluctuations (CNF) at on-state but followed 1/f2 characteristic at off-state. From the 1/f2 noise characteristics, the extracted trap time constant (τi) of the proposed device can be obtained to be 10 ms, which is shorter than those of the reference devices because of the full compensation of deep-level defects in the GaN buffer layer.

Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

2000 ◽  
Vol 76 (23) ◽  
pp. 3442-3444 ◽  
Author(s):  
J. A. Garrido ◽  
B. E. Foutz ◽  
J. A. Smart ◽  
J. R. Shealy ◽  
M. J. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Mobility Fluctuations

Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

2014 ◽  
Vol 1635 ◽  
pp. 109-114
Author(s):  
Yoshitaka Nakano ◽  
Yoshihiro Irokawa ◽  
Masatomo Sumiya ◽  
Yasunobu Sumida ◽  
Shuichi Yagi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Deep Level ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Impurity Incorporation ◽  
Two Dimensional Electron Gas ◽  
Turn On ◽  
Dimensional Electron Gas ◽  
Gan Buffer Layer

ABSTRACTWe have investigated on a relation between C-related deep-level defects and turn-on recovery characteristics in bulk regions of AlGaN/GaN hetero-structures containing various C concentrations, employing their Schottky barrier diodes. With decreasing the growth temperature of the GaN buffer layer, three specific deep-level defects located at ∼2.07, ∼2.75, and ∼3.23 eV below the conduction band were significantly enhanced probably due to the C impurity incorporation into the GaN buffer layer. Among them, the ∼2.75 and ∼3.23 eV levels are considered to be strongly responsible for the two-dimensional electron gas (2DEG) carrier trapping in the bulk regions of the hetero-structures, from their turn-on current recovery characteristics under various optical illuminations.

ON THE ORIGIN OF 1/F NOISE IN MOSFETS

2007 ◽  
Vol 07 (03) ◽  
pp. L321-L339 ◽  
Author(s):  
L. K. J. VANDAMME
Keyword(s):  
Empirical Relation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Time Constants ◽  
Strong Inversion ◽  
Typical Shape ◽  
Rts Noise ◽  
Lorentzian Spectrum ◽  
Mobility Fluctuations

Often the 1/f noise in MOSFETs is stated to be an ensemble of many RTS with different time constants. The majority of literature on 1/f noise is overlooking the contribution due to mobility fluctuations that are uncorrelated with number fluctuations. Here, we demonstrate that the so-called proofs for Δ N can also be obtained from the empirical relation. The following misunderstandings and controversial topics on the surface and bulk contributions to the low-frequency noise will be addressed: 1) 1/f and RTS noise can have different physical origins. An analysis in time domain shows that the low-frequency noise with RTS is nothing else than a superposition of a two level noise with a Lorentzian spectrum and a Gaussian noise with a pure 1/f spectrum and different bias dependency. 2) It is very unlikely that in a spectrum consisting of one strong two level RTS and a pure 1/f noise, the 1/f noise is a superposition of many RTS with different time constants. 3) The spreading in WLS I /I2 below a critical WL is not a proof for the Δ N origin. 4) The typical shape in the double log plot from sub threshold to strong inversion of S I/ I 2 versus I , is also not a proof for the Δ N origin.

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